Many applications, including optical multiplexing, switching, and detection, call for low-cost and broadband photonic devices with polarization-independent operation. While the silicon-on-insulator platform is well positioned to fulfill most of these requirements, its strong birefringence hinders the development of polarization-agnostic devices. Here we leverage the recently proposed bricked metamaterial topology to design, for the first time, to our knowledge, a polarization-independent
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This image represents an artistic rendering of a uniform array of GaN nanowire LEDs. The wires, grown using Molecular Beam Epitaxy, have an emitting region made using InGaN and are designed to emit red light.