
- Photonics Research
- Vol. 10, Issue 4, 1063 (2022)
Abstract
1. INTRODUCTION
Detecting light at the single-photon level has enabled novel scientific and industrial applications in recent decades [1]. Specifically, near- and mid-infrared detection is crucial for areas such as infrared fluorescence and spectroscopy [2–4], semiconductor and industrial production monitoring [5,6], planetary soil studies [7], remote light detection and ranging [8], as well as two-photon entanglement and interference [9] experiments. However, since photon energy is inversely proportional to wavelength, detecting long wavelength photons is intrinsically more challenging than detecting shorter wavelength photons. Generally, Si-based detectors can be used for infrared detection but suffer from a low cutoff wavelength, typically around 1.1 μm [10], making them inefficient for long wavelength photon detection. Si:Sb-based impurity band conduction detectors show mid-infrared light detection capability but not at the single-photon level [11]. Similarly, narrow-bandgap photoconductive semiconductors, like HgCdTe, InAs, and InGaAs detectors, suffer from low efficiency, large dark counts, and poor time resolution [12]. In contrast, superconducting nanowire single-photon detectors (SNSPDs) have high detection efficiency [13–15], high detection rates [16], low dark count rates (DCRs) [17], fast recovery time [18], and unprecedented temporal resolution [19,20], and thus they outperform traditional infrared single-photon detectors.
In 2001, NbN-based SNSPDs were first demonstrated by detecting 810 nm single photons [21]. Subsequently, SNSPDs fabricated on different platforms were explored and developed [1]. Although high system detection efficiencies have been realized and reported for the UV [22], visible [23], and near-infrared/telecom [13–15,24] ranges, detecting single photons beyond 1550 nm with high efficiency and time resolution has remained a challenge [25]. Early works showed amorphous WSi-based SNSPDs could be used for mid-infrared detection. However, these studies employed 4–6 nm thin superconducting films, resulting in low critical currents, which is detrimental to the timing jitter. The reported temporal resolution was close to the nanosecond scale [26], and these devices must be operated at sub-Kelvin temperatures, requiring complex dilution refrigerators. NbN-based SNSPDs with ultranarrow linewidths showed sensitivity up to 5 μm (saturated internal efficiency until 2.7 μm) [27]. A consequence of squeezing the nanowire width to around 30 nm makes fabrication challenging and degrades the detectors’ time resolution with the reduced critical current. In short, different works toward achieving efficient mid-infrared single-photon detection are summarized in Table 1 below.
Comparison of Different Mid-Infrared SNSPD Works
Materials | Linewidth/Film Thickness (nm) | Operation Temperature | Wavelength (μm) | SDE (2 μm)/Jitter (ps) | Reference |
---|---|---|---|---|---|
30/6 | 80 mK | 1.55–5.07 | Unknown | [ | |
WSi | 50/3.2 | 850 mK | 4.8–9.9 | Unknown | [ |
WSi | 100/3.5 | 400 mK | 1.5–6 | [ | |
NbN | 30/5.5 | 1.5 K | 0.5–5 | 5%/unknown | [ |
NbN | 56/6 | 2.25 K | 1.55–2 | 63%/102 | [ |
NbTiN | 40–60/7.5–9.5 | 2.5–2.8 K | 1.55–4 | 70%/14.3 | This work |
Alternatively, our previous work [31] showed that by optimizing the stoichiometry of polycrystalline NbTiN film during reactive magnetron co-sputtering deposition, it is possible to make SNSPDs with strongly saturated efficiency plateaus in the near-infrared region at 2.8 K operating temperature and also high performance at visible wavelengths up to 7 K [32]. Also, relatively thick NbTiN superconducting films were used [19,33] to improve our detectors’ optical absorption and critical current, therefore enhancing efficiency and time resolution. Building on our previous results, in this work we made SNSPDs from 5, 6.5, 7.5, and 9.5 nm thick NbTiN films with different nanowire designs. First, by characterizing our SNSPDs using flood illumination, we optimized the meander design in terms of internal detection efficiency. Encouraged by our initial characterization results, we fabricated fiber-coupled SNSPDs and achieved a system detection efficiency of
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2. SNSPD FABRICATION AND MEASUREMENT SETUP
Similar to Ref. [31], we deposited superconducting NbTiN films by a reactive magnetron co-sputtering deposition process. The stoichiometry of the films was controlled by adjusting the sputtering powers on the Ti and Nb targets. Film thickness was determined by a calibrated crystal microbalance, and SNSPDs were fabricated as described in Ref. [19]. Our fabricated detectors were either tested under flood illumination [Fig. 1(a)] or etched into a keyhole die shape and packaged using a standard ferrule and mating sleeves approach [34] [Fig. 1(b)]. This coupling method guarantees automatic alignment between detector and optical fibers for accurate system efficiency measurements. Both the flood illumination and fiber-coupled setup are shown in Fig. 1(c).
Figure 1.Illustration of (a) detector flood illumination, (b) a fiber-coupled detector, and (c) schematic of the efficiency measurement setup.
As shown in Fig. 1(c), we employ a near-infrared tunable laser (JGR-TLS5, 1260–1650 nm) and mid-infrared CW lasers with different wavelengths (2000 and 2700 nm laser from Thorlabs, 3001 and 4013 nm laser from Nanoplus) as input photon sources. Single-mode optical fibers are used to couple the light to the first fiber-to-fiber coupler (containing neutral density filters and a polarizer). A beam splitter is then used to create a reference arm with the majority of the power coupled to a calibrated power meter,
3. CHARACTERIZATION OF SNSPDs WITH FLOOD ILLUMINATION
In this work, SNSPDs with different nanowire widths (40/60/80 nm) and diameters (8/9/10 μm) were fabricated from 5 to 9.5 nm thick NbTiN films. For example, 60-120-r4 refers to a meandering nanowire design with 60 nm wide lines, a pitch of 120 nm, and 4 μm radius [see insert in Fig. 3(b)].
Figure 2.Internal efficiency measurements of SNSPDs fabricated from (a) 9.5 nm and (b) 7.5 nm thick NbTiN films.
Figure 3.(a) Photon counting rate (PCR) curves at 2700 nm of 60-120-r4 detectors from 7.5 nm (green) and 9.5 nm (blue) films, (b) PCR curves at 3001 nm of a 60-120-r4 detector/purple and a
The above results show that saturated internal efficiency until 2000 nm can be obtained with detectors made from 9.5/7.5 nm thick films. In order to explore the internal saturation limit, we carried out longer wavelength flood illumination measurements at 2700 and 3001 nm for a number of selected detectors. Figure 3(a) shows detectors with 60-120-r4 meander design from both 9.5/7.5 nm films at 2700 nm. Both detectors reach unity internal efficiency and detectors from 7.5 nm film (dark green curve) show stronger saturated internal efficiency than detectors from 9.5 nm film (light blue curve). This is because by reducing the thickness of the superconducting film, the superconducting energy gap is reduced with the same input photon power, and it is easier to break the superconducting state and form a resistive region [36].
Previous measurements at 2700 nm indicate that detectors made from 7.5 nm films are still promising for detecting single photons beyond 2700 nm, and we fabricated two types of SNSPDs from a 7.5 nm NbTiN film and measured their detection performances at 3001 nm. As shown in Fig. 3(b), a “large” meandering nanowire detector design of 60-120-r4 (purple), and a “small” detector design with linewidth 60 nm, filling factor 50%, and
Finally, we evaluated detectors made from even thinner films (5 and 6.5 nm). In Fig. 3(c), we demonstrate that a detector (40-120-r5) from 6.5 nm film achieves 80% internal efficiency at 4013 nm (determined using a sigmoid curve fitting). This represents the state-of-the-art mid-infrared polycrystalline-material-based SNSPDs. To get a better understanding of the film thickness effect on the detector performance, we created an overview in Fig. 3(d). We present the statistics of 32 fabricated SNSPDs from four different films. It is clear that 5 and 6.5 nm films suffer from low yield. The detectors made from the 5 nm films do not work well, because of their low critical current (1–2 μA). The non-working detectors from the 6.5 nm film did not show unity internal efficiency at 1550 nm and this is possibly caused by lower film homogeneity of the thin film [19]. In contrast, 7.5 and 9.5 nm films show higher yield but detectors from the 9.5 nm film start to show decreased internal efficiency in the mid-infrared compared to detectors from the 7.5 nm film. These results can be intuitively interpreted in such a way that thin films have less uniformity than thicker films, thus leading to a decreased yield. Thicker films are potentially more robust to local variations of surface and superconducting properties (due to magnetic contamination or variation of crystal properties) by offering an averaging effect (i.e., more atomic layers of superconducting materials). However, thicker films have larger superconducting energy gap, which lowers the internal efficiency at longer wavelengths. Various superconducting material related analyses need to be carried out in the future to establish clear correlation between superconducting property and detector yield, for example, X-ray diffraction and transmission electron microscopy for crystal structure analysis, scanning tunneling microscopy for electron states analysis, and cryogenic electric transport measurements for superconducting property analysis. Here, we also suggest two practical solutions to solve the trade-off between film thickness and performance for future mid-infrared SNSPDs study: bias-assisted sputtering can be applied to improve the critical current of SNSPDs [40] and post-processing treatment (for example, helium ion irradiation [41]) can enhance the internal efficiency of SNSPDs made from thicker films.
4. MEASUREMENTS OF FIBER-COUPLED SNSPDs
For most quantum optics experiments and applications, a fiber-coupled detector/system is preferred because of mature fiber optics technology and instruments.
The previous section provides evidence that both 7.5 and 9.5 nm NbTiN superconducting films are suitable for making mid-infrared SNSPDs in terms of good yield and internal efficiency while a reduced thickness (5–6.5 nm) leads to fewer working devices. Thus, we fabricated fiber-coupled SNSPDs from 7.5 nm thick NbTiN films. Similar to Ref. [14], the NbTiN films were initially deposited on
Figure 4(a) shows the performance of detector #1 (60 nm linewidth) made from a 7.5 nm NbTiN film. The SDEs for 1300, 1550, 1625, and 2000 nm are 50%, 60%, 61%, and 63%, respectively. The inset in Fig. 4(a) shows detector #1’s photon counting rate (PCR) curves at several wavelengths. Besides high SDE, high timing resolution is also highly desirable for many applications, for example, LiDAR [8] and fluorescence microscopy and spectroscopy [2,3]. The instrument response function (IRF) of detector #1 was characterized with a picosecond (ps)-pulsed laser (4.2 ps pulse width at 1064 nm wavelength) and a fast oscilloscope (4 GHz bandwidth, 40 GHz sampling rate) as described in Ref. [14]. As shown in Fig. 4(b), using a low-noise cryogenic amplifier operated at 40 K, the IRF of this device shows a Gaussian-shaped histogram. After fitting, we obtain
Figure 4.Fiber-coupled SNSPDs measurements of (a) SDE of detector #1 at 1310, 1625, 1550, and 2000 nm, (b) timing jitter of detector #1, (c) SDE of detector #2 at 2001 nm, and (d) DCRs of detector #2 under different conditions: no fiber (green), low-pass coated fiber (turquoise), UHNA fiber (red), and mid-IR fiber (purple) plugged in.
Besides achieving high system detection efficiency, high DCRs of mid-infrared SNSPDs are a major challenge. Previous work [19] showed that the DCRs of mid-infrared SNSPDs are typically in the order of
5. DISCUSSION AND CONCLUSION
In the past, amorphous materials were mainly used for mid-infrared single-photon detection motivated by the intuition that their superconducting energy gap (0.59–0.61 meV for WSi [45]) is lower than polycrystalline material (2.46 meV for NbN [46]). This work pinpoints that NbTiN (polycrystalline)-based SNSPDs can also achieve high mid-infrared single-photon detection efficiency while maintaining unprecedented time resolution. Furthermore, given that the energy of a single photon even at 10 μm wavelength (123.9 meV) is still significantly larger than both materials’ superconducting energy gap, other physical properties of the superconducting materials need to be investigated to enhance SNSPDs’ mid-infrared detection response. Besides improving internal detection efficiency, reducing the DCRs is another outstanding challenge for mid-infrared SNSPD systems. As shown in this work, only room temperature blackbody radiation delivered to the detector by
In conclusion, we demonstrated SNSPDs made from magnetron co-sputtered NbTiN superconducting films (5–9.5 nm) with unity internal efficiency at 3 μm and 80% internal efficiency at 4013 nm when operated in closed-cycle Gifford-McMahon coolers (2.4–2.8 K). Our fiber coupled device achieves over 70% system detection efficiency at 2 μm and
Acknowledgment
Acknowledgment. J.C. acknowledges China Scholarships Council. I.E.Z., V.Z., and Single Quantum B.V. acknowledge the support from the ATTRACT project funded by the EC. R.B.M.G. acknowledges support by the European Commission. S.N.D., S.S., V.Z., and Single Quantum B.V. acknowledge EU FET-Open project funding. V.Z. acknowledges funding from the Knut and Alice Wallenberg Foundation and support from the Swedish Research Council (VR).
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