Detectors|24 Article(s)
High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area
Xingye Zhou, Xin Tan, Yuangang Wang, Xubo Song, Tingting Han, Jia Li, Weili Lu, Guodong Gu, Shixiong Liang, Yuanjie Lü, and Zhihong Feng
Ultraviolet (UV) detectors with large photosensitive areas are more advantageous in low-level UV detection applications. In this Letter, high-performance 4H-SiC p-i-n avalanche photodiodes (APDs) with large active area (800 μm diameter) are reported. With the optimized epitaxial structure and device fabrication process, a high multiplication gain of 1.4 × 106 is obtained for the devices at room temperature, and the dark current is as low as ~10 pA at low reverse voltages. In addition, record external quantum efficiency of 85.5% at 274 nm is achieved, which is the highest value for the reported SiC APDs. Furthermore, the rejection ratio of UV to visible light reaches about 104. The excellent performance of our devices indicates a tremendous improvement for large-area SiC APD-based UV detectors. Finally, the UV imaging performance of our fabricated 4H-SiC p-i-n APDs is also demonstrated for system-level applications.
Chinese Optics Letters
  • Publication Date: Sep. 10, 2019
  • Vol. 17, Issue 9, 090401 (2019)
Ultra-compact four-lane hybrid-integrated ROSA based on three-dimensional microwave circuit design|On the Cover
Zeping Zhao, Jiaojiao Wang, Xueyan Han, Zhike Zhang, and Jianguo Liu
Chinese Optics Letters
  • Publication Date: Mar. 10, 2019
  • Vol. 17, Issue 3, 030401 (2019)
Impulse response of Ge2Sb2Te5-based ultrafast photodetector integrated with SOI waveguide
Vibhu Srivastava, Prateek Mishra, and Sunny
Chinese Optics Letters
  • Publication Date: Oct. 10, 2019
  • Vol. 17, Issue 10, 100401 (2019)
A proposed approach for detecting terahertz pulses by using double few-cycle laser pulses with opposite carrier envelope phases
Kejia Wang, Xinyang Gu, Zhenwei Zhang, Zhengang Yang, Jinsong Liu, and Shenglie Wang
Chinese Optics Letters
  • Publication Date: Sep. 10, 2018
  • Vol. 16, Issue 9, 090401 (2018)
Large-area 4H-SiC avalanche photodiodes with high gain and low dark current for visible-blind ultraviolet detection
Xingye Zhou, Jia Li, Weili Lu, Yuangang Wang, Xubo Song, Shunzheng Yin, Xin Tan, Yuanjie Lü, Hongyu Guo, Guodong Gu, and Zhihong Feng
Chinese Optics Letters
  • Publication Date: Jun. 10, 2018
  • Vol. 16, Issue 6, 060401 (2018)
Terahertz wave generation via pre-ionized air plasma
Kai Kang, Liangliang Zhang, Tong Wu, Kai Li, and Cunlin Zhang
We report the terahertz (THz) wave generation from a single-color scheme modulated by pre-ionized air plasma via an orthogonal pumping geometry. It is found that the amplitude of the THz signal generated by the pump beam tends to decrease gradually with the increase of the modulation power. We believe that the ponderomotive force plays an important role in the process of the interaction between the pump beam and the pre-ionization beam. The hydrostatic state of the electrostatic separation field caused by the modulation beam will directly affect the generation efficiency of the THz wave. Our results contribute to further understanding of the theoretical mechanism and expanding of the practical applications of THz wave generation and modulation.
Chinese Optics Letters
  • Publication Date: Nov. 10, 2018
  • Vol. 16, Issue 11, 110401 (2018)
External quantum efficiency-enhanced PtSi Schottky-barrier detector utilizing plasmonic ZnO:Al nanoparticles and subwavelength gratings
Bingxin Kang, Yi Cai, and Lingxue Wang
A infrared light trapping structure combining front subwavelength gratings and rear ZnO:Al nanoparticles for a PtSi Schottky-barrier detector over a 3–5 μm waveband is theoretically investigated. By selecting the proper plasmonic material and optimizing the parameters for the proposed structure, the absorption of the PtSi layer is dramatically improved. The theoretical results show that this improvement eventually translates into an equivalent external quantum efficiency (EQE) enhancement of 2.46 times at 3–3.6 μm and 2.38 times at 3.6–5 μm compared to conventional structures. This improvement in the EQE mainly lies in the increase of light path lengths within the PtSi layer by the subwavelength grating diffraction and nanoparticle-scattering effects.
Chinese Optics Letters
  • Publication Date: Jul. 10, 2016
  • Vol. 14, Issue 7, 070401 (2016)
Enhanced solar-blind ultraviolet single-photon detection with a Geiger-mode silicon avalanche photodiode
Yafan Shi, Zhaohui Li, Baicheng Feng, Peiqin Yan, Bingcheng Du, Hui Zhou, Haifeng Pan, and Guang Wu
Chinese Optics Letters
  • Publication Date: Mar. 10, 2016
  • Vol. 14, Issue 3, 030401 (2016)
Experimental investigation of the startup time difference between high-speed cameras
Yanyan Cao, Chao Wang, Qinwei Ma, and Shaopeng Ma
Chinese Optics Letters
  • Publication Date: Jul. 10, 2015
  • Vol. 13, Issue 7, 070401 (2015)
Light source system for high-precision flat-field correction and the calibration of an array detector
Fugui Yang, Qiushi Wang, and Ming Li
Chinese Optics Letters
  • Publication Date: Apr. 10, 2015
  • Vol. 13, Issue 4, 040402 (2015)
Topics