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Optoelectronics|62 Article(s)
High-performance broadband photodetectors based on b-As0.5P0.5 for infrared optical communication and imaging
Qianli Ma, Yiheng Li, Dawei He, Yongsheng Wang, and Yajie Yang
Infrared (IR) photodetectors (PDs) are crucial for medical imaging, optical communication, security surveillance, remote sensing, and gas identification. In this Letter, we systematically investigated a room temperature IR PD based on two-dimensional b-As0.5P0.5, a relatively unexplored component of b-AsP alloys. We synthesized high-quality b-As0.5P0.5 flakes via the chemical vapor transport (CVT) method with precisely controlled conditions. The fabricated b-As0.5P0.5 PD exhibits excellent photoconductivity, high responsivity, and a fast response in the visible and near-infrared (Vis-NIR) band. It achieves a responsivity of ∼0.209 A·W-1 and a response time of ∼16.6 µs under 1550 nm IR illumination. High-resolution single-pixel point optical imaging and high-speed optical communication were realized by the b-As0.5P0.5 PDs. This study confirms that b-As0.5P0.5 materials are highly promising for advanced IR optoelectronic applications. Infrared (IR) photodetectors (PDs) are crucial for medical imaging, optical communication, security surveillance, remote sensing, and gas identification. In this Letter, we systematically investigated a room temperature IR PD based on two-dimensional b-As0.5P0.5, a relatively unexplored component of b-AsP alloys. We synthesized high-quality b-As0.5P0.5 flakes via the chemical vapor transport (CVT) method with precisely controlled conditions. The fabricated b-As0.5P0.5 PD exhibits excellent photoconductivity, high responsivity, and a fast response in the visible and near-infrared (Vis-NIR) band. It achieves a responsivity of ∼0.209 A·W-1 and a response time of ∼16.6 µs under 1550 nm IR illumination. High-resolution single-pixel point optical imaging and high-speed optical communication were realized by the b-As0.5P0.5 PDs. This study confirms that b-As0.5P0.5 materials are highly promising for advanced IR optoelectronic applications.
Chinese Optics Letters
- Publication Date: May. 19, 2025
- Vol. 23, Issue 6, 062501 (2025)
Smoothed analysis-based noise manipulation for spatial photonic Ising machines
Xin Ye, Wenjia Zhang, and Zuyuan He
The photonic Ising machine, a promising non-von Neumann computational paradigm, offers a feasible way to address combinatorial optimization problems. We develop a digital noise injection method for spatial photonic Ising machines based on smoothed analysis, where noise level acts as a parameter that quantifies the smoothness degree. Through experiments with 20736-node Max-Cut problems, we establish a stable performance within a smoothness degree of 0.04 to 0.07. Digital noise injection results in a 24% performance enhancement, showing a 73% improvement over heuristic Sahni–Gonzales (SG) algorithms. Furthermore, to address noise-induced instability concerns, we propose an optoelectronic co-optimization method for a more streamlined smoothing method with strong stability. The photonic Ising machine, a promising non-von Neumann computational paradigm, offers a feasible way to address combinatorial optimization problems. We develop a digital noise injection method for spatial photonic Ising machines based on smoothed analysis, where noise level acts as a parameter that quantifies the smoothness degree. Through experiments with 20736-node Max-Cut problems, we establish a stable performance within a smoothness degree of 0.04 to 0.07. Digital noise injection results in a 24% performance enhancement, showing a 73% improvement over heuristic Sahni–Gonzales (SG) algorithms. Furthermore, to address noise-induced instability concerns, we propose an optoelectronic co-optimization method for a more streamlined smoothing method with strong stability.
Chinese Optics Letters
- Publication Date: Mar. 13, 2025
- Vol. 23, Issue 3, 032501 (2025)
Tutorial on laser-based visible light communications [Invited]
Yuqi Hou, Yue Wang, Zengxin Li, Meixin Liu... and Chao Shen|Show fewer author(s)
Facing escalating demands for high-speed, large-bandwidth, and low-latency wireless data links, laser communication technology has emerged as a promising technology. While free-space optical communication conventionally utilizes near-infrared light sources, there has been growing interest in exploring new spectral resources, including visible lasers. Recently, laser-based white light has been demonstrated in visible light communication (VLC), with a unique capability to seamlessly integrate with illumination and display systems. This review summarizes the key devices and system technologies in semiconductor-laser-based white light for VLC-related applications. The recent advances and many emerging applications in the evolution of lighting, display, and communication are discussed. Facing escalating demands for high-speed, large-bandwidth, and low-latency wireless data links, laser communication technology has emerged as a promising technology. While free-space optical communication conventionally utilizes near-infrared light sources, there has been growing interest in exploring new spectral resources, including visible lasers. Recently, laser-based white light has been demonstrated in visible light communication (VLC), with a unique capability to seamlessly integrate with illumination and display systems. This review summarizes the key devices and system technologies in semiconductor-laser-based white light for VLC-related applications. The recent advances and many emerging applications in the evolution of lighting, display, and communication are discussed.
Chinese Optics Letters
- Publication Date: Aug. 29, 2024
- Vol. 22, Issue 9, 092502 (2024)
Versatile monolithic optoelectronic platform for bending angle sensing and visible light communication|Editors' Pick
Fan Shi, Chengxiang Jiang, Li Fang, Zhihang Sun... and Yongjin Wang|Show fewer author(s)
In this Letter, a kind of optoelectronic chip based on III-nitride is developed as a versatile platform for both fiber-optic sensing and optical communication. The optoelectronic chip consists of a light-emitting diode (LED) and a photodiode (PD), which are fabricated with the same multi-quantum well (MQW) structure and monolithically integrated on a sapphire substrate. By integrating the chip with a polydimethylsiloxane (PDMS) encapsulated silica fiber-optic sensor, it can effectively detect the bending-induced light intensity change and generate the photocurrent to point out the angle changes. Besides, such an optoelectronic chip can also be treated as a transceiver, enabling duplex communication for real-time audio and video transmission. The proposed optoelectronic chip has the advantages of miniaturization, versatility, and ease of massive manufacturing, making it promising in integrated optical sensing and communication (IOSAC) systems. In this Letter, a kind of optoelectronic chip based on III-nitride is developed as a versatile platform for both fiber-optic sensing and optical communication. The optoelectronic chip consists of a light-emitting diode (LED) and a photodiode (PD), which are fabricated with the same multi-quantum well (MQW) structure and monolithically integrated on a sapphire substrate. By integrating the chip with a polydimethylsiloxane (PDMS) encapsulated silica fiber-optic sensor, it can effectively detect the bending-induced light intensity change and generate the photocurrent to point out the angle changes. Besides, such an optoelectronic chip can also be treated as a transceiver, enabling duplex communication for real-time audio and video transmission. The proposed optoelectronic chip has the advantages of miniaturization, versatility, and ease of massive manufacturing, making it promising in integrated optical sensing and communication (IOSAC) systems.
Chinese Optics Letters
- Publication Date: Sep. 13, 2024
- Vol. 22, Issue 9, 092501 (2024)
4 × 112 Gb/s hybrid integrated silicon receiver based on photonic-electronic co-design
Ye Jin, Yujun Xie, Zhihan Zhang, Donglai Lu... and Ming Li|Show fewer author(s)
A 4 × 112 Gb/s hybrid-integrated optical receiver is demonstrated based on the silicon-photonic vertical p-i-n photodetector and silicon–germanium transimpedance amplifier. We propose a photonic-electronic co-design technique to optimize both the device-level and system-level performance, based on the end-to-end equivalent circuit model of the receiver. Continuous-time linear equalization and shunt peaking are employed to enhance the frequency response. Experimental results reveal that the optical-to-electrical 3-dB bandwidth of the receiver is 48 GHz. Clear open NRZ eye diagrams at 56 Gb/s and PAM-4 eye diagrams at 112 Gb/s are achieved without an equalizer in the oscilloscope. The measured bit error rates for 56 Gb/s in NRZ and 112 Gb/s in PAM-4 reach 1 × 10-12 and 2.4 × 10-4 (KP4-FEC: forward error correction) thresholds under -4 dBm input power, respectively. Furthermore, the proposed receiver boasts a power consumption of approximately 2.2 pJ/bit, indicating an energy efficient solution for data center traffic growth. A 4 × 112 Gb/s hybrid-integrated optical receiver is demonstrated based on the silicon-photonic vertical p-i-n photodetector and silicon–germanium transimpedance amplifier. We propose a photonic-electronic co-design technique to optimize both the device-level and system-level performance, based on the end-to-end equivalent circuit model of the receiver. Continuous-time linear equalization and shunt peaking are employed to enhance the frequency response. Experimental results reveal that the optical-to-electrical 3-dB bandwidth of the receiver is 48 GHz. Clear open NRZ eye diagrams at 56 Gb/s and PAM-4 eye diagrams at 112 Gb/s are achieved without an equalizer in the oscilloscope. The measured bit error rates for 56 Gb/s in NRZ and 112 Gb/s in PAM-4 reach 1 × 10-12 and 2.4 × 10-4 (KP4-FEC: forward error correction) thresholds under -4 dBm input power, respectively. Furthermore, the proposed receiver boasts a power consumption of approximately 2.2 pJ/bit, indicating an energy efficient solution for data center traffic growth.
Chinese Optics Letters
- Publication Date: Aug. 13, 2024
- Vol. 22, Issue 8, 082501 (2024)
Hetero-integrated high-peak-optical-power laser source (940 nm) for time-of-flight sensors
Sergey Olegovich Slipchenko, Aleksandr Aleksandrovich Podoskin, Ilia Vasil'evich Shushkanov, Marina Gennad'evna Rastegaeva... and Vladimir Aleksandrovich Simakov|Show fewer author(s)
The generation of high-power laser pulses using a compact hetero-integrated assembly based on a semiconductor laser with a dual-element composite 2 µm × 100 µm aperture and a compact heterothyristor switch is demonstrated. The achieved peak optical power was 33 W with a pulse duration of 3 ns at a thyristor operating voltage of 55 V. The leading edge of the laser pulse turn-on was 50 ps to a power level of 24.7 W, and the turn-on delay between the elements of the composite aperture was 160 ps. The generation of high-power laser pulses using a compact hetero-integrated assembly based on a semiconductor laser with a dual-element composite 2 µm × 100 µm aperture and a compact heterothyristor switch is demonstrated. The achieved peak optical power was 33 W with a pulse duration of 3 ns at a thyristor operating voltage of 55 V. The leading edge of the laser pulse turn-on was 50 ps to a power level of 24.7 W, and the turn-on delay between the elements of the composite aperture was 160 ps.
Chinese Optics Letters
- Publication Date: Jul. 15, 2024
- Vol. 22, Issue 7, 072501 (2024)
Concentration sensing system with monolithic InGaN/GaN photonic chips
Feifei Qin, Xueyao Lu, Yang Chen, Xumin Gao... and Yongjin Wang|Show fewer author(s)
Using an identical monolithic InGaN/GaN light emitting diode (LED) array as the sensing module and a well-designed data processing module, we demonstrate a small-size concentration sensing prototype. Overlap between the emission and the response spectra of the InGaN/GaN LED makes each pair of LEDs in the arrayed chip form a sensing channel. The changes in liquid concentration can be transformed into variation of photocurrent. The system’s sensing properties are further optimized by varying the position, number of receivers, and packaging reflectors. With methyl orange as a tracer agent, the sensing system’s resolution is 0.286 µmol/L with a linear measurement region below 40 µmol/L. Using an identical monolithic InGaN/GaN light emitting diode (LED) array as the sensing module and a well-designed data processing module, we demonstrate a small-size concentration sensing prototype. Overlap between the emission and the response spectra of the InGaN/GaN LED makes each pair of LEDs in the arrayed chip form a sensing channel. The changes in liquid concentration can be transformed into variation of photocurrent. The system’s sensing properties are further optimized by varying the position, number of receivers, and packaging reflectors. With methyl orange as a tracer agent, the sensing system’s resolution is 0.286 µmol/L with a linear measurement region below 40 µmol/L.
Chinese Optics Letters
- Publication Date: Jun. 20, 2024
- Vol. 22, Issue 6, 062501 (2024)
Double-cliff-layer uni-traveling-carrier photodiode with high responsivity and ultra-broad bandwidth
Yaru Han, Yuxin Tian, Bing Xiong, Changzheng Sun... and Yi Luo|Show fewer author(s)
A novel backside-illuminated double-cliff-layer uni-traveling-carrier (DCL-UTC) photodiode with both high responsivity and ultra-broad bandwidth is designed and demonstrated. A thick absorption layer is adopted for high responsivity, and a depletion region with double cliff layers is proposed to alleviate the space charge effect and maintain overshoot electron velocity under large photocurrents. In addition, inductive coplanar waveguide electrodes are employed to enhance the frequency response performance. The 6-µm-diameter photodiode exhibits a high responsivity of 0.51 A/W and a large 3-dB bandwidth of 102 GHz. A high RF output power of 2.7 dBm is recorded at 100 GHz. A novel backside-illuminated double-cliff-layer uni-traveling-carrier (DCL-UTC) photodiode with both high responsivity and ultra-broad bandwidth is designed and demonstrated. A thick absorption layer is adopted for high responsivity, and a depletion region with double cliff layers is proposed to alleviate the space charge effect and maintain overshoot electron velocity under large photocurrents. In addition, inductive coplanar waveguide electrodes are employed to enhance the frequency response performance. The 6-µm-diameter photodiode exhibits a high responsivity of 0.51 A/W and a large 3-dB bandwidth of 102 GHz. A high RF output power of 2.7 dBm is recorded at 100 GHz.
Chinese Optics Letters
- Publication Date: May. 17, 2024
- Vol. 22, Issue 5, 052501 (2024)
Photonic analog signal processing and neuromorphic computing [Invited]
James Garofolo, and Ben Wu
In this review paper, we discuss the properties and applications of photonic computing and analog signal processing. Photonic computational circuits have large operation bandwidth, low power consumption, and fine frequency control, enabling a wide range of application-specific computational techniques that are impossible to implement using traditional electrical and digital hardware alone. These advantages are illustrated in the elegant implementation of optical steganography, the real-time blind separation of signals in the same bandwidth, and the efficient acceleration of artificial neural network inference. The working principles and use of photonic circuits for analog signal processing and neuromorphic computing are reviewed and notable demonstrated applications are highlighted. In this review paper, we discuss the properties and applications of photonic computing and analog signal processing. Photonic computational circuits have large operation bandwidth, low power consumption, and fine frequency control, enabling a wide range of application-specific computational techniques that are impossible to implement using traditional electrical and digital hardware alone. These advantages are illustrated in the elegant implementation of optical steganography, the real-time blind separation of signals in the same bandwidth, and the efficient acceleration of artificial neural network inference. The working principles and use of photonic circuits for analog signal processing and neuromorphic computing are reviewed and notable demonstrated applications are highlighted.
Chinese Optics Letters
- Publication Date: Mar. 21, 2024
- Vol. 22, Issue 3, 032501 (2024)
High-response formamidine bromide lead hybrid cadmium sulfide photodetector
Yao Liu, Lei Liu, Ruifeng Zhang, Weiye Yang, and Yingkai Liu
Organic–inorganic hybrid perovskite formamidinium lead bromide nanosheet (FAPbBr3 NS) is regarded as a superior substance used to construct optoelectronic devices. However, its uncontrollable stability seriously affects its application in the field of photodetectors. In this paper, FAPbBr3 is combined with cadmium sulfide nanobelt (CdS NB) to construct a hybrid device that greatly improves the stability and performance of the photodetector. The response of the FAPbBr3 NS/CdS NB detector under 490 nm light illumination reaches 5712 A/W, while the response of the FAPbBr3 photodetector under equivalent conditions is only 25.45 A/W. The photocurrent of the FAPbBr3 NS/CdS NB photodetector is nearly 80.25% of the initial device after exposure to air for 60 days. The difference in electric field distribution between the single material device and the composite device is simulated by the finite-difference time-domain method. It shows the advantages of composite devices in photoconductive gain and directly promotes the hybrid device performance. This paper presents a new possibility for high stability, fast response photodetectors. Organic–inorganic hybrid perovskite formamidinium lead bromide nanosheet (FAPbBr3 NS) is regarded as a superior substance used to construct optoelectronic devices. However, its uncontrollable stability seriously affects its application in the field of photodetectors. In this paper, FAPbBr3 is combined with cadmium sulfide nanobelt (CdS NB) to construct a hybrid device that greatly improves the stability and performance of the photodetector. The response of the FAPbBr3 NS/CdS NB detector under 490 nm light illumination reaches 5712 A/W, while the response of the FAPbBr3 photodetector under equivalent conditions is only 25.45 A/W. The photocurrent of the FAPbBr3 NS/CdS NB photodetector is nearly 80.25% of the initial device after exposure to air for 60 days. The difference in electric field distribution between the single material device and the composite device is simulated by the finite-difference time-domain method. It shows the advantages of composite devices in photoconductive gain and directly promotes the hybrid device performance. This paper presents a new possibility for high stability, fast response photodetectors.
Chinese Optics Letters
- Publication Date: Feb. 22, 2024
- Vol. 22, Issue 2, 022502 (2024)
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