Contents
2019
Volume: 40 Issue 12
20 Article(s)

Export citation format
Articles
Hot electron effects on the operation of potential well barrier diodes
M. Akura, G. Dunn, and M. Missous
A study has just been carried out on hot electron effects in GaAs/Al0.3Ga0.7As potential well barrier (PWB) diodes using both Monte Carlo (MC) and drift-diffusion (DD) models of charge transport. We show the operation and behaviour of the diode in terms of electric field, mean electron velocity and potential, mean ener
Journal of Semiconductors
  • Publication Date: Dec. 01, 2019
  • Vol. 40, Issue 12, 122101 (2019)
Analytical model for the effects of the variation of ferrolectric material parameters on the minimum subthreshold swing in negative capacitance capacitor
Raheela Rasool, Najeeb-ud-Din, and G. M. Rather
Journal of Semiconductors
  • Publication Date: Dec. 01, 2019
  • Vol. 40, Issue 12, 122401 (2019)
Column readout circuit with improved offset mismatch and charge sharing for CMOS image sensor
Zhongjie Guo, Ningmei Yu, and Longsheng Wu
Journal of Semiconductors
  • Publication Date: Dec. 01, 2019
  • Vol. 40, Issue 12, 122404 (2019)
Simulation and application of external quantum efficiency of solar cells based on spectroscopy
Guanlin Chen, Can Han, Lingling Yan, Yuelong Li, Ying Zhao, and Xiaodan Zhang
Journal of Semiconductors
  • Publication Date: Dec. 01, 2019
  • Vol. 40, Issue 12, 122701 (2019)
A contrivance of 277 nm DUV LD with B0.313Ga0.687N/B0.40Ga0.60N QWs and AlxGa1–xN heterojunction grown on AlN substrate
Mussaab I. Niass, Muhammad Nawaz Sharif, Yifu Wang, Zhengqian Lu, Xue Chen, Yipu Qu, Zhongqiu Du, Fang Wang, and Yuhuai Liu
In this paper, an ultraviolet C-band laser diode lasing at 277 nm composed of B0.313Ga0.687N/B0.40Ga0.60N QW/QB heterostructure on Mg and Si-doped AlxGa1–xN layers was designed, as well as a lowest reported substitutional accepter and donor concentration up to NA = 5.0 × 1017 cm–3 and ND = 9.0 × 1016 cm–3 for
Journal of Semiconductors
  • Publication Date: Dec. 01, 2019
  • Vol. 40, Issue 12, 122802 (2019)
Study of the morphology evolution of AlN grown on nano-patterned sapphire substrate
Zhuohui Wu, Jianchang Yan, Yanan Guo, Liang Zhang, Yi Lu, Xuecheng Wei, Junxi Wang, and Jinmin Li
Journal of Semiconductors
  • Publication Date: Dec. 01, 2019
  • Vol. 40, Issue 12, 122803 (2019)
A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure
C. Usha, and P. Vimala
Journal of Semiconductors
  • Publication Date: Dec. 01, 2019
  • Vol. 40, Issue 12, 122901 (2019)
Improvement of tunnel compensated quantum well infrared detector
Chaohui Li, Jun Deng, Weiye Sun, Leilei He, Jianjun Li, Jun Han, and Yanli Shi
Journal of Semiconductors
  • Publication Date: Dec. 01, 2019
  • Vol. 40, Issue 12, 122902 (2019)
Comments and Opinions
Research status and prospects of deep ultraviolet devices
Hideki Hirayama
Journal of Semiconductors
  • Publication Date: Dec. 01, 2019
  • Vol. 40, Issue 12, 120301 (2019)
Editorial
Preface to the Special Topic on Deep Ultraviolet Light-Emitting Materials and Devices
Jinmin Li, Xinqiang Wang, Dabing Li, and Tongbo Wei
Journal of Semiconductors
  • Publication Date: Dec. 01, 2019
  • Vol. 40, Issue 12, 120101 (2019)
News and Views
Laser fabrication of graphene-based soft robots
Bing Han, and Yong-Lai Zhang
Journal of Semiconductors
  • Publication Date: Dec. 01, 2019
  • Vol. 40, Issue 12, 120401 (2019)
III-nitride based ultraviolet laser diodes
Degang Zhao
Journal of Semiconductors
  • Publication Date: Dec. 01, 2019
  • Vol. 40, Issue 12, 120402 (2019)
Research Highlight
Magnetic LEGO: van der Vaals interlayer magnetism
Journal of Semiconductors
  • Publication Date: Dec. 01, 2019
  • Vol. 40, Issue 12, 120201 (2019)
Reviews
Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials
Nasir Alfaraj, Jung-Wook Min, Chun Hong Kang, Abdullah A. Alatawi, Davide Priante, Ram Chandra Subedi, Malleswararao Tangi, Tien Khee Ng, and Boon S. Ooi
Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride optoelectronic devices, based on aluminum gallium nitride and boron nitride and their alloys, and the heterogeneous integration with two-dimensional and oxide-based materials is reviewed. We emphasize wide-bandgap nitride compo
Journal of Semiconductors
  • Publication Date: Dec. 01, 2019
  • Vol. 40, Issue 12, 121801 (2019)