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Journals >Journal of Semiconductors

Research Articles
Oscillation neuron based on a low-variability threshold switching device for high-performance neuromorphic computing
Oscillation neuron based on a low-variability threshold switching device for high-performance neuromorphic computing
Li Yujia, Tang Jianshi, Gao Bin, Li Xinyi, Xi Yue, Zhang Wanrong, Qian He, and Wu Huaqiang
Journal of Semiconductors
  • Jun. 17, 2021
  • Vol.42, Issue 6 (2021)
Research Articles
A 3.3 kV 4H-SiC split gate MOSFET with a central implant region for superior trade-off between static and switching performance
A 3.3 kV 4H-SiC split gate MOSFET with a central implant region for superior trade-off between static and switching performance
Yoon Jongwoon, and Kim Kwangsoo
Journal of Semiconductors
  • Jun. 17, 2021
  • Vol.42, Issue 6 (2021)
Research Articles
Determination of trap density-of-states distribution of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films
Determination of trap density-of-states distribution of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films
Shaban Mahmoud
Journal of Semiconductors
  • Jun. 17, 2021
  • Vol.42, Issue 6 (2021)
Research Articles
3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications
3.3 kV 4H-SiC DMOSFET with a source-contacted dummy gate for high-frequency applications
Cha Kyuhyun, and Kim Kwangsoo
Journal of Semiconductors
  • Jun. 17, 2021
  • Vol.42, Issue 6 (2021)
Research Articles
Heavily doped silicon: A potential replacement of conventional plasmonic metals
Heavily doped silicon: A potential replacement of conventional plasmonic metals
Faruque Md. Omar, Al Mahmud Rabiul, and Sagor Rakibul Hasan
Journal of Semiconductors
  • Jun. 17, 2021
  • Vol.42, Issue 6 (2021)
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A chlorinated copolymer donor demonstrates a 18.13% power conversion efficiency
  • Journal of Semiconductors
  • Vol. 42, Issue 1, 010501 (2021)
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62 GHz germanium photodetector with inductive gain peaking electrode for photonic receiving beyond 100 Gbaud
  • Journal of Semiconductors
  • Vol. 42, Issue 2, 020502 (2021)
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Photonic devices based on thin-film lithium niobate on insulator
  • Journal of Semiconductors
  • Vol. 42, Issue 4, 041304 (2021)
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Multidimensional perovskites enhance solar cell performance
  • Journal of Semiconductors
  • Vol. 42, Issue 2, 020201 (2021)
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Design technology co-optimization towards sub-3 nm technology nodes
  • Journal of Semiconductors
  • Vol. 42, Issue 2, 020301 (2021)
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Inorganic perovskite/organic tandem solar cells with efficiency over 20%
  • Journal of Semiconductors
  • Vol. 42, Issue 2, 020501 (2021)
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