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Terahertz phononic crystal in plasmonic nanocavity
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Journal of Semiconductors
  • Sep. 21, 2023
  • Vol. 44, Issue 8 (2023)
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Analytical model of non-uniform charge distribution within the gated region of GaN HEMTs
Amgad A. Al-Saman, Eugeny A. Ryndin, Xinchuan Zhang, Yi Pei, and Fujiang Lin
Journal of Semiconductors
  • Sep. 21, 2023
  • Vol. 44, Issue 8 (2023)
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High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility
Liyang Zhu, Kuangli Chen, Ying Ma, Yong Cai, Chunhua Zhou, Zhaoji Li, Bo Zhang, and Qi Zhou
Journal of Semiconductors
  • Sep. 21, 2023
  • Vol. 44, Issue 8 (2023)
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Efficiency-loss analysis of monolithic perovskite/silicon tandem solar cells by identifying the patterns of a dual two-diode model’s current-voltage curves
Yuheng Zeng, Zetao Ding, Zunke Liu, Wei Liu, Mingdun Liao, Xi Yang, Zhiqin Ying, Jingsong Sun, Jiang Sheng, Baojie Yan, Haiyan He, Chunhui Shou, Zhenhai Yang, and Jichun Ye
Journal of Semiconductors
  • Sep. 21, 2023
  • Vol. 44, Issue 8 (2023)
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Enhanced efficiency of the Sb2Se3 thin-film solar cell by the anode passivation using an organic small molecular of TCTA
Yujie Hu, Zhixiang Chen, Yi Xiang, Chuanhui Cheng, Weifeng Liu, and Weishen Zhan
Journal of Semiconductors
  • Sep. 21, 2023
  • Vol. 44, Issue 8 (2023)
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