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    Journals >Journal of Semiconductors

    Research Articles
    Machine learning facilitates the development of interconnecting layers for perovskite/silicon heterojunction tandem solar cells with proof-of-concept efficiency > 38%
    Machine learning facilitates the development of interconnecting layers for perovskite/silicon heterojunction tandem solar cells with proof-of-concept efficiency > 38%
    Xuejiao Wang, Guanlan Chen, Ying Liu, Guangyi Wang, Wei Han, Jin Wang, Pengfei Liu, Jilei Wang, Shaojuan Bao, Bo Yu, Ying Liu, Xinliang Chen, Shengzhi Xu, Ying Zhao, and Xiaodan Zhang
    Journal of Semiconductors
    • Dec. 15, 2025
    • Vol. 46, Issue 11 (2025)
    Research Articles
    Mid-wavelength infrared planar junction photodetector based on InAs/GaSb Type-Ⅱ superlattices
    Mid-wavelength infrared planar junction photodetector based on InAs/GaSb Type-Ⅱ superlattices
    Shihao Zhang, Hongyue Hao, Ye Zhang, Shuo Wang, Xiangyu Zhang, Ruoyu Xie, Lingze Yao, Faran Chang, Yifan Shan, Haofeng Liu, Guowei Wang, Donghai Wu, Dongwei Jiang, Yingqiang Xu, Zhichuan Niu, and Wenjing Dong
    Journal of Semiconductors
    • Dec. 15, 2025
    • Vol. 46, Issue 11 (2025)
    Research Articles
    Research on optical soliton characteristics GaSb-based ~2 μm wavelength two-section integrated optical chip
    Research on optical soliton characteristics GaSb-based ~2 μm wavelength two-section integrated optical chip
    Wenjun Yu, Zhongliang Qiao, Xiang Li, Jia Xu Brian Sia, Dengqun Weng, Xiaohu Hou, Zaijin Li, Lin Li, Hao Chen, Zhibin Zhao, Yi Qu, Chongyang Liu, Hong Wang, Yu Zhang, and Zhichuan Niu
    Journal of Semiconductors
    • Dec. 15, 2025
    • Vol. 46, Issue 11 (2025)
    Research Articles
    Study of a novel SiC-based light initiated multi-gate semiconductor switch
    Study of a novel SiC-based light initiated multi-gate semiconductor switch
    Chongbiao Luan, Jianqiang Yuan, Hongwei Liu, Longfei Xiao, Huiru Sha, Le Xu, Yang He, Lingyun Wang, Hongtao Li, and Yupeng Huang
    Journal of Semiconductors
    • Dec. 15, 2025
    • Vol. 46, Issue 11 (2025)
    Research Articles
    Mesa-structured AlGaAsSb APD: dark current and noise analysis
    Mesa-structured AlGaAsSb APD: dark current and noise analysis
    Yuhang He, Rui Wang, Yan Liang, Yingqiang Xu, Guowei Wang, Haiqiao Ni, Shuo Wang, Zhichuan Niu, and Xiaohong Yang
    Journal of Semiconductors
    • Dec. 15, 2025
    • Vol. 46, Issue 11 (2025)
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    A 112 Gbps DSP-based PAM4 SerDes receiver with a wide band equalization tuning AFE in 7 nm FinFET
    Huanan Guo, Yufeng Yao, Jiazhen Ni, and Xiang Gao
    • Journal of Semiconductors
    • Vol. 46, Issue 6, 062204 (2025)
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    Revolutionizing neuromorphic computing with memristor-based artificial neurons
    Yanning Chen, Guobin Zhang, Fang Liu, Bo Wu, Yongfeng Deng, Dawei Gao, and Yishu Zhang
    • Journal of Semiconductors
    • Vol. 46, Issue 6, 061301 (2025)
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    A 28 nm 576K RRAM-based computing-in-memory macro featuring hybrid programming with area efficiency of 2.82 TOPS/mm2
    Siqi Liu, Songtao Wei, Peng Yao, Dong Wu, Lu Jie, Sining Pan, Jianshi Tang, Bin Gao, He Qian, and Huaqiang Wu
    • Journal of Semiconductors
    • Vol. 46, Issue 6, 062304 (2025)
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    Recent developments in superjunction power devices
    Chao Ma, Weizhong Chen, Teng Liu, Wentong Zhang, and Bo Zhang
    • Journal of Semiconductors
    • Vol. 45, Issue 11, 111301 (2024)
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    Advances in perovskite lasers
    Zhicheng Guan, Hengyu Zhang and Guang Yang
    • Journal of Semiconductors
    • Vol. 46, Issue 4, 041401 (2025)
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    Broadband PZT electro-optic modulator
    Peng Wang, Hongyan Yu, Yujun Xie, Jie Peng, Chengyang Zhong, Ang Li, Zehao Guan, Jungan Wang, Chen Yang, Yu Han, Feng Qiu, and Ming Li
    • Journal of Semiconductors
    • Vol. 46, Issue 3, 030501 (2025)
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