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    Journals >Journal of Semiconductors

    Improving the incorporation of indium component for InGaN-based green LED through inserting photonic crystalline in the GaN layer
    Improving the incorporation of indium component for InGaN-based green LED through inserting photonic crystalline in the GaN layer
    Yunqi Li, Xinwei Wang, Ning Zhang, Xuecheng Wei, and Junxi Wang
    Journal of Semiconductors
    • Jul. 22, 2022
    • Vol. 43, Issue 7 (2022)
    (Ca,K)(Zn,Mn)2As2: Ferromagnetic semiconductor induced by decoupled charge and spin doping in CaZn2As2
    (Ca,K)(Zn,Mn)2As2: Ferromagnetic semiconductor induced by decoupled charge and spin doping in CaZn2As2
    Jinou Dong, Xueqin Zhao, Licheng Fu, Yilun Gu, Rufei Zhang, Qiaolin Yang, Lingfeng Xie, and Fanlong Ning
    Journal of Semiconductors
    • Jul. 22, 2022
    • Vol. 43, Issue 7 (2022)
    A 26-Gb/s CMOS optical receiver with a reference-less CDR in 65-nm CMOS
    A 26-Gb/s CMOS optical receiver with a reference-less CDR in 65-nm CMOS
    Quan Pan, Xiongshi Luo, Zhenghao Li, Zhengzhe Jia, Fuzhan Chen, Xuewei Ding, and C. Patrick Yue
    Journal of Semiconductors
    • Jul. 22, 2022
    • Vol. 43, Issue 7 (2022)
    Watts-level ultraviolet-C LED integrated light sources for efficient surface and air sterilization
    Watts-level ultraviolet-C LED integrated light sources for efficient surface and air sterilization
    Wei Luo, Tai Li, Yongde Li, Houjin Wang, Ye Yuan, Shangfeng Liu, Weiyun Wang, Qi Wang, Junjie Kang, and Xinqiang Wang
    Journal of Semiconductors
    • Jul. 22, 2022
    • Vol. 43, Issue 7 (2022)
    Electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases epitaxied on GaAs (001) substrates
    Electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases epitaxied on GaAs (001) substrates
    Qiqi Wei, Hailong Wang, Xupeng Zhao, and Jianhua Zhao
    Journal of Semiconductors
    • Jul. 22, 2022
    • Vol. 43, Issue 7 (2022)
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    Structural and optical properties of AlN sputtering deposited on sapphire substrates with various orientations
    • Journal of Semiconductors
    • Vol. 43, Issue 2, 022801 (2022)
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    Star perovskite materials
    • Journal of Semiconductors
    • Vol. 43, Issue 3, 030203 (2022)
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    Diamond semiconductor and elastic strain engineering
    • Journal of Semiconductors
    • Vol. 43, Issue 2, 021801 (2022)
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    Side chain engineering on D18 polymers yields 18.74% power conversion efficiency
    • Journal of Semiconductors
    • Vol. 42, Issue 10, 100501 (2021)
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    Review on the quantum emitters in two-dimensional materials
    • Journal of Semiconductors
    • Vol. 40, Issue 7, 071903 (2019)
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    Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2
    • Journal of Semiconductors
    • Vol. 41, Issue 6, 062801 (2020)
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