Journals >Chinese Optics Letters
About the Cover
Monolithic integration of III-V lasers with small footprint, good coherence and low power consumption based on CMOS-compatible Si substrate has been known as an ef?cient route towards high-density optical interconnects in the photonic integrated circuits. However, the material dissimilarities between Si and III-V materials limit the performance of monolithic microlasers. Here, under the pumping condition of continuous-wave 632.8nm He-Ne gas laser at room-temperature, we achieved InAs/GaAs quantum dot photonic crystal band-edge laser, with the crystal directly grown on on-axis Si (001) substrate. This provides a feasible route towards a low-cost and large-scale integration method for light sources on the Si platform.