Contents
2022
Volume: 43 Issue 4
12 Article(s)

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Articles
DASP: Defect and Dopant ab-initio Simulation Package
Menglin Huang, Zhengneng Zheng, Zhenxing Dai, Xinjing Guo, Shanshan Wang, Lilai Jiang, Jinchen Wei, and Shiyou Chen
In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, the Defect and Dopant ab-initio Simulation Package (DASP), which is composed of four modules for calculating: (i) elemental chemical potentials, (ii) defect (dopant) formation en
Journal of Semiconductors
  • Publication Date: Apr. 01, 2022
  • Vol. 43, Issue 4, 042101 (2022)
Janus VXY monolayers with tunable large Berry curvature
Wenrong Liu, Xinyang Li, Changwen Zhang, and Shishen Yan
Journal of Semiconductors
  • Publication Date: Apr. 01, 2022
  • Vol. 43, Issue 4, 042501 (2022)
Editorial
Preface to the Special Topic on In-Situ and in-operando Characterization of Semiconductor Materials and Devices
Xiaoxing Ke, and Yong Zhang
Journal of Semiconductors
  • Publication Date: Apr. 01, 2022
  • Vol. 43, Issue 4, 040101 (2022)
Research Highlights
Inorganic electron-transport materials in perovskite solar cells
Lin Xie, Lixiu Zhang, Yong Hua, and Liming Ding
Journal of Semiconductors
  • Publication Date: Apr. 01, 2022
  • Vol. 43, Issue 4, 040201 (2022)
Stabilizing α-phase FAPbI3 solar cells
Yaxin Wang, Xin Zhang, Zejiao Shi, Lixiu Zhang, Anran Yu, Yiqiang Zhan, and Liming Ding
Journal of Semiconductors
  • Publication Date: Apr. 01, 2022
  • Vol. 43, Issue 4, 040202 (2022)
Frontier applications of perovskites beyond photovoltaics
Luyao Mei, Haoran Mu, Lu Zhu, Shenghuang Lin, Lixiu Zhang, and Liming Ding
Journal of Semiconductors
  • Publication Date: Apr. 01, 2022
  • Vol. 43, Issue 4, 040203 (2022)
Reviews
In-situ/operando characterization techniques for organic semiconductors and devices
Sai Jiang, Qinyong Dai, Jianhang Guo, and Yun Li
Journal of Semiconductors
  • Publication Date: Apr. 01, 2022
  • Vol. 43, Issue 4, 041101 (2022)
Comprehensive,in operando, and correlative investigation of defects and their impact on device performance
Yong Zhang, and David J. Smith
Despite the long history of research that has focused on the role of defects on device performance, the studies have not always been fruitful. A major reason is because these defect studies have typically been conducted in a parallel mode wherein the semiconductor wafer was divided into multiple pieces for separate opt
Journal of Semiconductors
  • Publication Date: Apr. 01, 2022
  • Vol. 43, Issue 4, 041102 (2022)
Study of structure-property relationship of semiconductor nanomaterials by off-axis electron holography
Luying Li, Yongfa Cheng, Zunyu Liu, Shuwen Yan, Li Li, Jianbo Wang, Lei Zhang, and Yihua Gao
Journal of Semiconductors
  • Publication Date: Apr. 01, 2022
  • Vol. 43, Issue 4, 041103 (2022)
In-situ monitoring of dynamic behavior of catalyst materials and reaction intermediates in semiconductor catalytic processes
Zhen Fang, Yao Liu, Chengyi Song, Peng Tao, Wen Shang, Tao Deng, Xiaoqin Zeng, and Jianbo Wu
Journal of Semiconductors
  • Publication Date: Apr. 01, 2022
  • Vol. 43, Issue 4, 041104 (2022)
Structural evolution of low-dimensional metal oxide semiconductors under external stress
Peili Zhao, Lei Li, Guoxujia Chen, Xiaoxi Guan, Ying Zhang, Weiwei Meng, Ligong Zhao, Kaixuan Li, Renhui Jiang, Shuangfeng Jia, He Zheng, and Jianbo Wang
Journal of Semiconductors
  • Publication Date: Apr. 01, 2022
  • Vol. 43, Issue 4, 041105 (2022)
Recent progress on advanced transmission electron microscopy characterization for halide perovskite semiconductors
Xiaomei Wu, Xiaoxing Ke, and Manling Sui
Halide perovskites are strategically important in the field of energy materials. Along with the rapid development of the materials and related devices, there is an urgent need to understand the structure–property relationship from nanoscale to atomic scale. Much effort has been made in the past few years to overcome th
Journal of Semiconductors
  • Publication Date: Apr. 01, 2022
  • Vol. 43, Issue 4, 041106 (2022)