Journals >Journal of Semiconductors
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2022
Volume: 43 Issue 5
15 Article(s)
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Articles
Magnetic tuning in a novel half-metallic Ir2TeI2 monolayer
Didi Zhao, Chenggong Zhang, Changwen Zhang, Weixiao Ji, Shengshi Li, and Peiji Wang
A two-dimensional (2D) high-temperature ferromagnetic half-metal whose magnetic and electronic properties can be flexibly tuned is required for the application of new spintronics devices. In this paper, we predict a stable Ir2TeI2 monolayer with half-metallicity by systematical first-principles calculations. Its groundA two-dimensional (2D) high-temperature ferromagnetic half-metal whose magnetic and electronic properties can be flexibly tuned is required for the application of new spintronics devices. In this paper, we predict a stable Ir2TeI2 monolayer with half-metallicity by systematical first-principles calculations. Its ground state is found to exhibit inherent ferromagnetism and strong out-of-plane magnetic anisotropy of up to 1.024 meV per unit cell. The Curie temperature is estimated to be 293 K based on Monte Carlo simulation. Interestingly, a switch of magnetic axis between in-plane and out-of-plane is achievable under hole and electron doping, which allows for the effective control of spin injection/detection in such 2D systems. Furthermore, the employment of biaxial strain can realize the transition between ferromagnetic and antiferromagnetic states. These findings not only broaden the scope of 2D half-metal materials but they also provide an ideal platform for future applications of multifunctional spintronic devices..
Journal of Semiconductors
- Publication Date: May. 01, 2022
- Vol. 43, Issue 5, 052001 (2022)
Double-balanced mixer based on monolayer graphene field-effect transistors
Min Wu, Weida Hong, Guanyu Liu, Jiejun Zhang, Ziao Tian, and Miao Zhang
Graphene field-effect transistors (GFET) have attracted much attention in the radio frequency (RF) and microwave fields because of its extremely high carrier mobility. In this paper, a GFET with a gate length of 5 μm is fabricated through the van der Walls (vdW) transfer process, and then the existing large-signal GFETGraphene field-effect transistors (GFET) have attracted much attention in the radio frequency (RF) and microwave fields because of its extremely high carrier mobility. In this paper, a GFET with a gate length of 5 μm is fabricated through the van der Walls (vdW) transfer process, and then the existing large-signal GFET model is described, and the model is implemented in Verilog-A for analysis in RF and microwave circuits. Next a double-balanced mixer based on four GFETs is designed and analyzed in advanced design system (ADS) tools. Finally, the simulation results show that with the input of 300 and 280 MHz, the IIP3 of the mixed signal is 24.5 dBm..
Journal of Semiconductors
- Publication Date: May. 01, 2022
- Vol. 43, Issue 5, 052002 (2022)
Observation of resistive switching in a graphite/hexagonal boron nitride/graphite heterostructure memristor
Yafeng Deng, Yixiang Li, Pengfei Wang, Shuang Wang, Xuan Pan, and Dong Wang
With the atomically sharp interface and stable switching channel, van der Waals (vdW) heterostructure memristors have attracted extensive interests for the application of high-density memory and neuromorphic computing. Here, we demonstrate a new type of vdW heterostructure memristor device by sandwiching a single-crystWith the atomically sharp interface and stable switching channel, van der Waals (vdW) heterostructure memristors have attracted extensive interests for the application of high-density memory and neuromorphic computing. Here, we demonstrate a new type of vdW heterostructure memristor device by sandwiching a single-crystalline h-BN layer between two thin graphites. In such a device, a stable bipolar resistive switching (RS) behavior has been observed for the first time. We also characterize their switching performance, and observe an on/off ratio of >10 3 and a minimum RESET voltage variation coefficient of 3.81%. Our work underscores the potential of 2D materials and vdW heterostructures for emerging memory and neuromorphic applications..
Journal of Semiconductors
- Publication Date: May. 01, 2022
- Vol. 43, Issue 5, 052003 (2022)
Tin dioxide buffer layer-assisted efficiency and stability of wide-bandgap inverted perovskite solar cells
Bingbing Chen, Pengyang Wang, Ningyu Ren, Renjie Li, Ying Zhao, and Xiaodan Zhang
Inverted perovskite solar cells (IPSCs) have attracted tremendous research interest in recent years due to their applications in perovskite/silicon tandem solar cells. However, further performance improvements and long-term stability issues are the main obstacles that deeply hinder the development of devices. Herein, wInverted perovskite solar cells (IPSCs) have attracted tremendous research interest in recent years due to their applications in perovskite/silicon tandem solar cells. However, further performance improvements and long-term stability issues are the main obstacles that deeply hinder the development of devices. Herein, we demonstrate a facile atomic layer deposition (ALD) processed tin dioxide (SnO2) as an additional buffer layer for efficient and stable wide-bandgap IPSCs. The additional buffer layer increases the shunt resistance and reduces the reverse current saturation density, resulting in the enhancement of efficiency from 19.23% to 21.13%. The target device with a bandgap of 1.63 eV obtains open-circuit voltage of 1.19 V, short circuit current density of 21.86 mA/cm2, and fill factor of 81.07%. More importantly, the compact and stable SnO2 film invests the IPSCs with superhydrophobicity, thus significantly enhancing the moisture resistance. Eventually, the target device can maintain 90% of its initial efficiency after 600 h storage in ambient conditions with relative humidity of 20%–40% without encapsulation. The ALD-processed SnO2 provides a promising way to boost the efficiency and stability of IPSCs, and a great potential for perovskite-based tandem solar cells in the near future..
Journal of Semiconductors
- Publication Date: May. 01, 2022
- Vol. 43, Issue 5, 052201 (2022)
Effect of charge trapping on electrical characteristics of silicon junctionless nanowire transistor
Yifan Fu, Liuhong Ma, Zhiyong Duan, and Weihua Han
We investigated the effect of charge trapping on electrical characteristics of silicon junctionless nanowire transistors which are fabricated on heavily n-type doped silicon-on-insulator substrate. The obvious random telegraph noise and current hysteresis observed at the temperature of 10 K indicate the existence of acWe investigated the effect of charge trapping on electrical characteristics of silicon junctionless nanowire transistors which are fabricated on heavily n-type doped silicon-on-insulator substrate. The obvious random telegraph noise and current hysteresis observed at the temperature of 10 K indicate the existence of acceptor-like traps. The position depth of the traps in the oxide from Si/SiO2 interface is 0.35 nm, calculated by utilizing the dependence of the capture and emission time on the gate voltage. Moreover, by constructing a three-dimensional model of tri-gate device structure in COMSOL Multiphysics simulation software, we achieved the trap density of 1.9 × 1012 cm–2 and the energy level position of traps at 0.18 eV below the intrinsic Fermi level..
Journal of Semiconductors
- Publication Date: May. 01, 2022
- Vol. 43, Issue 5, 054101 (2022)
Uniform, fast, and reliable CMOS compatible resistive switching memory
Yunxia Hao, Ying Zhang, Zuheng Wu, Xumeng Zhang, Tuo Shi, Yongzhou Wang, Jiaxue Zhu, Rui Wang, Yan Wang, and Qi Liu
Resistive switching random access memory (RRAM) is considered as one of the potential candidates for next-generation memory. However, obtaining an RRAM device with comprehensively excellent performance, such as high retention and endurance, low variations, as well as CMOS compatibility, etc., is still an open question.Resistive switching random access memory (RRAM) is considered as one of the potential candidates for next-generation memory. However, obtaining an RRAM device with comprehensively excellent performance, such as high retention and endurance, low variations, as well as CMOS compatibility, etc., is still an open question. In this work, we introduce an insert TaOx layer into HfOx-based RRAM to optimize the device performance. Attributing to robust filament formed in the TaOx layer by a forming operation, the local-field and thermal enhanced effect and interface modulation has been implemented simultaneously. Consequently, the RRAM device features large windows (> 103), fast switching speed (~ 10 ns), steady retention (> 72 h), high endurance (> 108 cycles), and excellent uniformity of both cycle-to-cycle and device-to-device. These results indicate that inserting the TaOx layer can significantly improve HfOx-based device performance, providing a constructive approach for the practical application of RRAM..
Journal of Semiconductors
- Publication Date: May. 01, 2022
- Vol. 43, Issue 5, 054102 (2022)
Mechanism investigation of pre-existing void-induced multi-modal electro-migration behavior
Zhaoxiang Han, and Weihai Fan
A multi-modal time-to-failure distribution for an electro-migration (EM) structure has been observed and studied from long durationin-situ EM experiment, for which the failure mechanism has been investigated and discussed comprehensively. The mixed EM failure behavior strongly suggest that the fatal voids induced EM faA multi-modal time-to-failure distribution for an electro-migration (EM) structure has been observed and studied from long durationin-situ EM experiment, for which the failure mechanism has been investigated and discussed comprehensively. The mixed EM failure behavior strongly suggest that the fatal voids induced EM failure appear at various locations along the EM structure. This phenomenon is believed to be highly related to the existence of pre-existing voids before EM stress. Meanwhile, the number and location of the pre-existing voids can influence the EM failure mode significantly. Based on our research, a potential direction to improve the EM lifetime of Cu interconnect is presented..
Journal of Semiconductors
- Publication Date: May. 01, 2022
- Vol. 43, Issue 5, 054103 (2022)
News and Views
Breaking the symmetry of polarizers
Chengwei Qiu
Journal of Semiconductors
- Publication Date: May. 01, 2022
- Vol. 43, Issue 5, 050401 (2022)
Research Highlights
Domain controlling and defect passivation for efficient quasi-2D perovskite LEDs
Dezhong Zhang, Chuanjiang Qin, and Liming Ding
Journal of Semiconductors
- Publication Date: May. 01, 2022
- Vol. 43, Issue 5, 050201 (2022)
The physical origin of stimulated emission in perovskites
Ju Wang, Shufeng Wang, and Liming Ding
Journal of Semiconductors
- Publication Date: May. 01, 2022
- Vol. 43, Issue 5, 050202 (2022)
Nonfullerene acceptors based on perylene monoimides
Yutong Ji, Helong Bai, Lixiu Zhang, Youdi Zhang, and Liming Ding
Journal of Semiconductors
- Publication Date: May. 01, 2022
- Vol. 43, Issue 5, 050203 (2022)
Reviews
Multifunctional neurosynaptic devices for human perception systems
Wei Wen, Yunlong Guo, and Yunqi Liu
The traditional Von Neumann architecture for processing information is difficult to meet the needs of the big data era, while low-power, small-sized neurosynaptic devices can operate and store information, so that they have received extensive attention. Due to the development of artificial intelligence and robotics, neThe traditional Von Neumann architecture for processing information is difficult to meet the needs of the big data era, while low-power, small-sized neurosynaptic devices can operate and store information, so that they have received extensive attention. Due to the development of artificial intelligence and robotics, neurosynaptic devices have been given high expectations and requirements. The trend of functionalization, intelligence, and integration of computing and storage is obvious. In this review, the basic principles and types of neurosynaptic devices are summarized, the achievements of neurosynaptic devices for human perception systems are discussed and a prospect on the development trend is also given..
Journal of Semiconductors
- Publication Date: May. 01, 2022
- Vol. 43, Issue 5, 051201 (2022)
Characterization of interfaces: Lessons from the past for the future of perovskite solar cells
Wanlong Wang, Dongyang Zhang, Rong Liu, Deepak Thrithamarassery Gangadharan, Furui Tan, and Makhsud I. Saidaminov
A photovoltaic technology historically goes through two major steps to evolve into a mature technology. The first step involves advances in materials and is usually accompanied by the rapid improvement of power conversion efficiency. The second step focuses on interfaces and is usually accompanied by significant stabilA photovoltaic technology historically goes through two major steps to evolve into a mature technology. The first step involves advances in materials and is usually accompanied by the rapid improvement of power conversion efficiency. The second step focuses on interfaces and is usually accompanied by significant stability improvement. As an emerging generation of photovoltaic technology, perovskite solar cells are transitioning to the second step of their development when a significant focus shifts toward interface studies and engineering. While various interface engineering strategies have been developed, interfacial characterization is crucial to show the effectiveness of interfacial modification. Here, we review the characterization techniques that have been utilized in studying interface properties in perovskite solar cells. We first summarize the main roles of interfaces in perovskite solar cells, and then we discuss some typical characterization methodologies for morphological, optical, and electrical studies of interfaces. Successful experiences and existing problems are analyzed when discussing some commonly used methods. We then analyze the challenges and provide an outlook for further development of interfacial characterizations. This review aims to evoke strengthened research devotion on novel and persuasive interfacial engineering..
Journal of Semiconductors
- Publication Date: May. 01, 2022
- Vol. 43, Issue 5, 051202 (2022)
Short Communication
A chlorinated lactone polymer donor featuring high performance and low cost
Ke Jin, Zongliang Ou, Lixiu Zhang, Yongbo Yuan, Zuo Xiao, Qiuling Song, Chenyi Yi, and Liming Ding
Journal of Semiconductors
- Publication Date: May. 01, 2022
- Vol. 43, Issue 5, 050501 (2022)
Additive and interfacial control for efficient perovskite light-emitting diodes with reduced trap densities
Shun Tian, Chen Zou, Runchen Lai, Chungen Hsu, Xuhui Cao, Shiyu Xing, Baodan Zhao, and Dawei Di
Journal of Semiconductors
- Publication Date: May. 01, 2022
- Vol. 43, Issue 5, 050502 (2022)
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