Wen Shi, Sen Huang, Xinhua Wang, Qimeng Jiang, Yixu Yao, Lan Bi, Yuchen Li, Kexin Deng, Jie Fan, Haibo Yin, Ke Wei, Yankui Li, Jingyuan Shi, Haojie Jiang, Junfeng Li, Xinyu Liu. Low-thermal-budget Au-free ohmic contact to an ultrathin barrier AlGaN/GaN heterostructure utilizing a micro-patterned ohmic recess[J]. Journal of Semiconductors, 2021, 42(9): 092801

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- Journal of Semiconductors
- Vol. 42, Issue 9, 092801 (2021)

Fig. 1. (Color online) (a) Schematic cross section of the fabricated Si-CMOS-compatible GaN MIS-HEMTs utilizing a micro-patterned ohmic recess. (b) SEM image. (c) Line profile of the micro-patterned AlGaN/GaN heterostructure measured by atomic force microscopy (AFM).

Fig. 2. (a) Linear fit of the fabricated Ti/Al/Ti/TiN ohmic contact resistances versus TLM spacing. (b) Temperature-dependent characteristics: R C and R SH. (c) ρ C as fitted by thermionic field emission model. (d) Temperature-dependent transfer length L T.

Fig. 3. (Color online) (a) DC output, (b) transfer, and (c) off-state leakage characteristics of the fabricated CMOS-process compatible LPCVD-SiNx /AlGaN/GaN MIS-HEMTs.
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Table 1. The summary of micro-patterned ohmic contacts to various AlGaN/GaN heterostructures.

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