[1] S Huang, X Y Liu, X H Wang et al. Ultrathin-barrier AlGaN/GaN heterostructure: A recess-free technology for manufacturing high-performance GaN-on-Si power devices. IEEE Trans Electron Devices, 65, 207(2018).
[2] H X Jiang, C W Tang, K M Lau. Enhancement-mode GaN MOS-HEMTs with recess-free barrier engineering and high-k ZrO2 gate dielectric. IEEE Electron Device Lett, 39, 405(2018).
[3] P C Han, Z Z Yan, C H Wu et al. Recess-free normally-off GaN MIS-HEMT fabricated on ultra-thin-barrier AlGaN/GaN heterostructure. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 427(2019).
[4] S Huang, X H Wang, X Y Liu et al. Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates. Appl Phys Express, 12, 024001(2019).
[5]
[6]
[7] D Marcon, B De Jaeger, S Halder et al. Manufacturing challenges of GaN-on-Si HEMTs in a 200 mm CMOS fab. IEEE Trans Semicond Manuf, 26, 361(2013).
[8] H S Lee, D S Lee, T Palacios. AlGaN/GaN high-electron-mobility transistors fabricated through a Au-free technology. IEEE Electron Device Lett, 32, 623(2011).
[9] Y Li, G I Ng, S Arulkumaran et al. Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors. Appl Phys Express, 8, 041001(2015).
[10] J H Zhang, S Huang, Q L Bao et al. Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing. Appl Phys Lett, 107, 262109(2015).
[11] A Shriki, R Winter, Y Calahorra et al. Formation mechanism of gold-based and gold-free ohmic contacts to AlGaN/GaN heterostructure field effect transistors. J Appl Phys, 121, 065301(2017).
[12] T Yoshida, T Egawa. Improvement of Au-free, Ti/Al/W ohmic contact on AlGaN/GaN heterostructure featuring a thin-Ti layer and low temperature annealing. Phys Status Solidi A, 215, 1700825(2018).
[13] J H Zhang, X W Kang, X H Wang et al. Ultralow-contact-resistance Au-free ohmic contacts with low annealing temperature on AlGaN/GaN heterostructures. IEEE Electron Device Lett, 39, 847(2018).
[14] M Y Fan, G Y Yang, G N Zhou et al. Ultra-low contact resistivity of < 0.1 Ω mm for Au-free Ti
[15] X H Ma, Y Liu, X H Wang et al. Effect of alloying temperature on the capacitance-voltage and current-voltage characteristics of low-pressure chemical vapor deposition SiN
[16] Y K Wang, S Huang, X H Wang et al. Effects of fluorine plasma treatment on Au-free ohmic contacts to ultrathin-barrier AlGaN/GaN heterostructure. IEEE Trans Electron Devices, 66, 2932(2019).
[17] J Guo, G W Li, F Faria et al. MBE-regrown ohmics in InAlN HEMTs with a regrowth interface resistance of 0.05 Ω mm. IEEE Electron Device Lett, 33, 525(2012).
[18] T D Huang, X L Zhu, K M Lau. Enhancement-mode AlN/GaN MOSHFETs on Si substrate with regrown source/drain by MOCVD. IEEE Electron Device Lett, 33, 1123(2012).
[19] H J Yu, L McCarthy, S Rajan et al. Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts. IEEE Electron Device Lett, 26, 283(2005).
[20] Y Lu, X H Ma, L Yang et al. High RF performance AlGaN/GaN HEMT fabricated by recess-arrayed ohmic contact technology. IEEE Electron Device Lett, 39, 811(2018).
[21] B Benakaprasad, A M Eblabla, X Li et al. Optimization of ohmic contact for AlGaN/GaN HEMT on low-resistivity silicon. IEEE Trans Electron Devices, 67, 863(2020).
[22] J Antoszewski, M Gracey, J M Dell et al. Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors. J Appl Phys, 87, 3900(2000).
[23] Z H Liu, S Arulkumaran, G I Ng. Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from −50 to 200 °C. Appl Phys Lett, 94, 142105(2009).
[24] A Aminbeidokhti, S Dimitrijev, J S Han et al. The power law of phonon-limited electron mobility in the 2-D electron gas of AlGaN/GaN heterostructure. IEEE Trans Electron Devices, 63, 2214(2016).
[25] F Iucolano, G Greco, F Roccaforte. Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures. Appl Phys Lett, 103, 201604(2013).
[26] F Iucolano, F Roccaforte, A Alberti et al. Temperature dependence of the specific resistance in Ti/Al/Ni/Au contacts on n-type GaN. J Appl Phys, 100, 123706(2006).
[27] Y Takei, M Kamiya, K Tsutsui et al. Reduction of contact resistance on AlGaN/GaN HEMT structures introducing uneven AlGaN layers. Phys Status Solidi A, 212, 1104(2015).