Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semiconductor transistors

Shuxin Tan; Takashi Egawa

doi:10.1088/1674-4926/40/4/042801

Journals >Journal of Semiconductors >Volume 40 >Issue 4 >Page 042801 > Article

Journal of Semiconductors
Vol. 40, Issue 4, 042801 (2019)

Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semiconductor transistors

Shuxin Tan¹ and Takashi Egawa²

Author Affiliations

¹School of Electronics and Information, Nantong University, Nantong 226019, China

²Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

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DOI: 10.1088/1674-4926/40/4/042801 Cite this Article

Shuxin Tan, Takashi Egawa. Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semiconductor transistors[J]. Journal of Semiconductors, 2019, 40(4): 042801 Copy Citation Text

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Fig. 1. (Color online) C–V characteristics at 1 MHz for all the diodes.

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(Color online) (a) The output characteristics and (b) the transfer characteristics for samples A and B. (c) The output characteristics and (d) the transfer characteristics for samples C, D and E.

Fig. 2. (Color online) (a) The output characteristics and (b) the transfer characteristics for samples A and B. (c) The output characteristics and (d) the transfer characteristics for samples C, D and E.

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Fig. 3. (Color online) The I_D–V_G curves and three-terminal gate current density (I_G) in semi-logarithmic scale for (a) samples A and B and (b) samples C, D and E.

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