Analytical model for the effects of the variation of ferrolectric material parameters on the minimum subthreshold swing in negative capacitance capacitor

Raheela Rasool; Najeeb-ud-Din; G. M. Rather

doi:10.1088/1674-4926/40/12/122401

Journals >Journal of Semiconductors >Volume 40 >Issue 12 >Page 122401 > Article

Journal of Semiconductors
Vol. 40, Issue 12, 122401 (2019)

Analytical model for the effects of the variation of ferrolectric material parameters on the minimum subthreshold swing in negative capacitance capacitor

Raheela Rasool, Najeeb-ud-Din, and G. M. Rather

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Department of Electronics and Communication, National Institute of Technology, Srinagar, Jammu & Kashmir, India

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DOI: 10.1088/1674-4926/40/12/122401 Cite this Article

Raheela Rasool, Najeeb-ud-Din, G. M. Rather. Analytical model for the effects of the variation of ferrolectric material parameters on the minimum subthreshold swing in negative capacitance capacitor[J]. Journal of Semiconductors, 2019, 40(12): 122401 Copy Citation Text

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Fig. 1. (a) Schematic of MFMIS based NC-FET. (b) Equivalent capacitance divider.

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Fig. 2. Voltage-charge plot for a ferroelectric material.

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Fig. 3. (a) Capacitance versus charge plots for MOS capacitor, ferroelectric capacitor and the total capacitance of MFMIS capacitor. (b) Voltage charge plot of the MFMIS capacitor.

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Parameter	PZT^[20]	BaTiO₃^[15]	SBT^[15]	HfSiO^[22]	P(VDF-TrFE)^[23]
α (cm/F)	–2.25 × 10⁹	–5 × 10⁸	–3.25 × 10⁹	–8.65 × 10¹⁰	–1.8 × 10¹¹
β (cm³/F/C²)	1.3 × 10¹⁸	2.2 × 10¹⁸	9.37 × 10¹⁸	1.92 × 10²⁰	5.8 × 10²²
γ (cm⁵/F/C⁴)	9.83 × 10²⁵	7.5 × 10²⁷	0	0	0
N_A (cm^–3)	2.3 × 10²⁰	3.3 × 10²⁰	7.5 × 10¹⁹	5.7 × 10¹⁹	4 × 10¹⁸
t_ox (nm)	2	2	2	2	2
t_FE (nm)	22.3	19.3	15.5	5.8	2.8
S_min (mV/dec)	52.8	46.5	41.6	31	27

Table 1. Ferroelectric thickness (t_FE) and minimum subthreshold swing (S_min) for different ferroelectric materials.

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