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Photodetectors|3 Article(s)
High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform
Yiding Lin, Kwang Hong Lee, Shuyu Bao, Xin Guo... and Chuan Seng Tan|Show fewer author(s)
In this paper, normal incidence vertical p-i-n photodetectors on a germanium-on-insulator (GOI) platform were demonstrated. The vertical p-i-n structure was realized by ion-implanting boron and arsenic at the bottom and top of the Ge layer, respectively, during the GOI fabrication. Abrupt doping profiles were verified in the transferred high-quality Ge layer. The photodetectors exhibit a dark current density of ～47 mA/cm2 at ?1 V and an optical responsivity of 0.39 A/W at 1550 nm, which are improved compared with state-of-the-art demonstrated GOI photodetectors. An internal quantum efficiency of ～97% indicates excellent carrier collection efficiency of the device. The photodetectors with mesa diameter of 60 μm exhibit a 3 dB bandwidth of ～1 GHz, which agrees well with theoretical calculations. The bandwidth is expected to improve to ～32 GHz with mesa diameter of 10 μm. This work could be similarly extended to GOI platforms with other intermediate layers and potentially enrich the functional diversity of GOI for near-infrared sensing and communication integrated with Ge CMOS and mid-infrared photonics. In this paper, normal incidence vertical p-i-n photodetectors on a germanium-on-insulator (GOI) platform were demonstrated. The vertical p-i-n structure was realized by ion-implanting boron and arsenic at the bottom and top of the Ge layer, respectively, during the GOI fabrication. Abrupt doping profiles were verified in the transferred high-quality Ge layer. The photodetectors exhibit a dark current density of ～47 mA/cm2 at ?1 V and an optical responsivity of 0.39 A/W at 1550 nm, which are improved compared with state-of-the-art demonstrated GOI photodetectors. An internal quantum efficiency of ～97% indicates excellent carrier collection efficiency of the device. The photodetectors with mesa diameter of 60 μm exhibit a 3 dB bandwidth of ～1 GHz, which agrees well with theoretical calculations. The bandwidth is expected to improve to ～32 GHz with mesa diameter of 10 μm. This work could be similarly extended to GOI platforms with other intermediate layers and potentially enrich the functional diversity of GOI for near-infrared sensing and communication integrated with Ge CMOS and mid-infrared photonics.
Photonics Research
- Publication Date: Sep. 21, 2017
- Vol. 5, Issue 6, 06000702 (2017)
Near-infrared metal-semiconductor-metal photodetector based on semi-insulating GaAs and interdigital electrodes
A. I. Nusir, A. M. Hil, M. O. Manasreh, and and J. B. Herzog
Metal-semiconductor-metal photodetectors on semi-insulating GaAs with interdigital electrodes showed significant enhancement in the spectral response in the near-infrared region as the electrode spacing is reduced. The photocurrent for the device with 5 μm interdigital spacing is five orders of magnitude higher than the dark current, and the room temperature detectivity is on the order of 2.4 × 1012 cmHz1/2 W-1 at 5 V bias. Furthermore, the spectral response of this device possesses strong dependence on the polarization of incident light showing potential plasmonic effects with only microscale dimensions. These experimental data were analyzed using optical simulation to confirm the response of the devices. Metal-semiconductor-metal photodetectors on semi-insulating GaAs with interdigital electrodes showed significant enhancement in the spectral response in the near-infrared region as the electrode spacing is reduced. The photocurrent for the device with 5 μm interdigital spacing is five orders of magnitude higher than the dark current, and the room temperature detectivity is on the order of 2.4 × 1012 cmHz1/2 W-1 at 5 V bias. Furthermore, the spectral response of this device possesses strong dependence on the polarization of incident light showing potential plasmonic effects with only microscale dimensions. These experimental data were analyzed using optical simulation to confirm the response of the devices.
Photonics Research
- Publication Date: Apr. 15, 2015
- Vol. 3, Issue 1, 01000001 (2015)
Performance study of a cesium iodide photocathode-based UV photon detector in Ar/CH4 mixture
G. Baishali, V. Radhakrishna, V. Koushal, K. Rakhee, and and K. Rajanna
The detection efficiency of a gaseous photomultiplier depends on the photocathode quantum efficiency and the extraction efficiency of photoelectrons into the gas. In this paper we have studied the performance of an UV photon detector with P10 gas in which the extraction efficiency can reach values near to those in vacuum operated devices. Simulations have been done to compare the percentage of photoelectrons backscattered in P10 gas as well as in the widely used neon-based gas mixture. The performance study has been carried out using a single stage thick gas electron multiplier (THGEM). The electron pulses and electron spectrum are recorded under various operating conditions. Secondary effects prevailing in UV photon detectors like photon feedback are discussed and its effect on the electron spectrum under different operating conditions is analyzed. The detection efficiency of a gaseous photomultiplier depends on the photocathode quantum efficiency and the extraction efficiency of photoelectrons into the gas. In this paper we have studied the performance of an UV photon detector with P10 gas in which the extraction efficiency can reach values near to those in vacuum operated devices. Simulations have been done to compare the percentage of photoelectrons backscattered in P10 gas as well as in the widely used neon-based gas mixture. The performance study has been carried out using a single stage thick gas electron multiplier (THGEM). The electron pulses and electron spectrum are recorded under various operating conditions. Secondary effects prevailing in UV photon detectors like photon feedback are discussed and its effect on the electron spectrum under different operating conditions is analyzed.
Photonics Research
- Publication Date: Nov. 05, 2014
- Vol. 2, Issue 3, 03000092 (2014)
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