Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals

Guiying Shen; Youwen Zhao; Yongbiao Bai; Jingming Liu; Hui Xie; Zhiyuan Dong; Jun Yang; Ding Yu

doi:10.1088/1674-4926/40/4/042101

Journals >Journal of Semiconductors >Volume 40 >Issue 4 >Page 042101 > Article

Journal of Semiconductors
Vol. 40, Issue 4, 042101 (2019)

Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals

Guiying Shen¹, Youwen Zhao^1、2, Yongbiao Bai¹, Jingming Liu¹, Hui Xie¹, Zhiyuan Dong¹, Jun Yang¹, and Ding Yu^1、2

Author Affiliations

¹Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Opto-Electronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1088/1674-4926/40/4/042101 Cite this Article

Guiying Shen, Youwen Zhao, Yongbiao Bai, Jingming Liu, Hui Xie, Zhiyuan Dong, Jun Yang, Ding Yu. Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals[J]. Journal of Semiconductors, 2019, 40(4): 042101 Copy Citation Text

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Abstract

Lightly Te-doped GaSb samples grown by the liquid encapsulated Czochralski (LEC) method have been studied by Hall measurements and low-temperature PL spectroscopy. The results suggest that acceptor-related antisite is the dominant defect in n-type GaSb with low Te-doping concentration. As the Te concentration increases, gallium vacancy related defects become the main acceptor. A new band of around 665 meV is observed in the GaSb sample with the lowest Te-doping concentration. The variation of the acceptor defects and their influence on the electronic and optical property on the n-GaSb single crystal are discussed based on the results.

$ {n_0} + N_{\rm{A}}^ - = N_{{\rm D_1}}^ + + N_{{\rm D_2}}^ + + {p_0}, $

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