Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals

Guiying Shen; Youwen Zhao; Yongbiao Bai; Jingming Liu; Hui Xie; Zhiyuan Dong; Jun Yang; Ding Yu

doi:10.1088/1674-4926/40/4/042101

Journals >Journal of Semiconductors >Volume 40 >Issue 4 >Page 042101 > Article

Journal of Semiconductors
Vol. 40, Issue 4, 042101 (2019)

Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals

Guiying Shen¹, Youwen Zhao^1、2, Yongbiao Bai¹, Jingming Liu¹, Hui Xie¹, Zhiyuan Dong¹, Jun Yang¹, and Ding Yu^1、2

Author Affiliations

¹Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Opto-Electronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1088/1674-4926/40/4/042101 Cite this Article

Guiying Shen, Youwen Zhao, Yongbiao Bai, Jingming Liu, Hui Xie, Zhiyuan Dong, Jun Yang, Ding Yu. Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals[J]. Journal of Semiconductors, 2019, 40(4): 042101 Copy Citation Text

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Fig. 1. (Color online) PL spectra of p-type GaSb samples measured at 10 K.

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Fig. 2. (Color online) PL spectra of sample 2 at 10 K.

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Fig. 3. (Color online) PL spectra of samples 1, 3 and 4 at 10 K.

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Fig. 4. (Color online) PL spectra of samples 5, 6 and 7 at 10 K.

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Sample No.	Mobility (cm²/(V·s))	Carrier concentration (cm⁻³)	Type
1	2.34 × 10³	1.66 × 10¹⁶	n
2	2.83 × 10³	2.79 × 10¹⁶	n
3	2.94 × 10³	5.24 × 10¹⁶	n
4	2.96 × 10³	6.63 × 10¹⁶	n
5	3.04 × 10³	7.84 × 10¹⁶	n
6	3.34 × 10³	1.14 × 10¹⁷	n
7	3.24 × 10³	1.38 × 10¹⁷	n
8	6.41 × 10²	1.41 × 10¹⁷	p
9	7.39 × 10²	1.14 × 10¹⁷	p

Table 1. Hall results of n-type Te-GaSb sample at room temperature.

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Energy (meV)	Transition	Quota
812	Band gap	Ref. [19] (4.2 K)
810	Free exciton	Ref. [20] (20 K)
808	Excitonic transition	Ref. [18] (19 K)
802	Donor-acceptor transition	Ref. [19] (4.2 K)
797	Excitonic transition	Ref. [18] (19 K)
796, 792	Exciton band to (V_Ga GaSb)⁰	Ref. [19] (4.2 K)
781	C-(V_Ga GaSb)⁰	Ref. [19] (4.2 K)
777	D⁺-(V_Ga GaSb)⁰	Ref. [19] (4.2 K)
765	LO phonon replica of 796 meV transition	Ref. [18] (19 K)
760	Acceptor B	Ref. [18] (19 K)
756	Exciton band to GaSb	Ref. [5] (10 K)
746, 740	LO phonon replica of 777 meV	Ref. [19] (4.2 K)
738	C-(V_Ga GaSb Te_Sb)	Ref. [18] (19 K)
710	C-(V_Ga GaSb)	Ref. [19] (4.2 K)
682	LO phonon replica of 710 meV	Ref. [19] (4.2 K)

Table 2. The PL peak position and related transition of GaSb reported in the literature.

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Sample No.	Peak position	Strength of peak G	Peak position	Strength of peak C	Peak position	Strength of peak T
1	665	0.65	683	1.26	703	1.73
2	664	0.52	683	1.43	706	1.68
3	664	0.43	685	1.52	708	1.53
4	665	0.42	686	1.58	707	1.56
5	666	0.12	692	0.92	712	1.59
6	–	–	700	0.83	721	1.76
7	–	–	712	0.75	732	1.98

Table 3. The position (meV) and intensity (a.u.) of resolved peak G, C and T.

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