Guiying Shen, Youwen Zhao, Yongbiao Bai, Jingming Liu, Hui Xie, Zhiyuan Dong, Jun Yang, Ding Yu. Photoluminescene study acceptor defects in lightly doped n type GaSb single crystals[J]. Journal of Semiconductors, 2019, 40(4): 042101

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- Journal of Semiconductors
- Vol. 40, Issue 4, 042101 (2019)

Fig. 1. (Color online) PL spectra of p-type GaSb samples measured at 10 K.

Fig. 2. (Color online) PL spectra of sample 2 at 10 K.

Fig. 3. (Color online) PL spectra of samples 1, 3 and 4 at 10 K.

Fig. 4. (Color online) PL spectra of samples 5, 6 and 7 at 10 K.
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Table 1. Hall results of n-type Te-GaSb sample at room temperature.
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Table 2. The PL peak position and related transition of GaSb reported in the literature.
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Table 3. The position (meV) and intensity (a.u.) of resolved peak G, C and T.

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