• Laser & Optoelectronics Progress
  • Vol. 59, Issue 9, 0922002 (2022)
Nan Lin1、2、*, Wenhe Yang1、2, Yunyi Chen1、2, Xin Wei1、2, Cheng Wang2, Jiaoling Zhao2, Yujie Peng2, and Yuxin Leng2、**
Author Affiliations
  • 1School of Microelectronics, Shanghai University, Shanghai 200072, China
  • 2Department of Precision Optics Engineering, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
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    DOI: 10.3788/LOP202259.0922002 Cite this Article Set citation alerts
    Nan Lin, Wenhe Yang, Yunyi Chen, Xin Wei, Cheng Wang, Jiaoling Zhao, Yujie Peng, Yuxin Leng. Research Progress and Development Trend of Extreme Ultraviolet Lithography Source[J]. Laser & Optoelectronics Progress, 2022, 59(9): 0922002 Copy Citation Text show less
    Schematic diagram of double pulse scheme of commercial laser plasma EUV source[22]
    Fig. 1. Schematic diagram of double pulse scheme of commercial laser plasma EUV source[22]
    Architecture representation of the LPP source system[25]
    Fig. 2. Architecture representation of the LPP source system[25]
    Regions of EUV radiation and laser energy deposition induced by different lasers. (a) Nd∶YAG laser; (b) CO2 laser[30]
    Fig. 3. Regions of EUV radiation and laser energy deposition induced by different lasers. (a) Nd∶YAG laser; (b) CO2 laser[30]
    Schematic diagram of the MOPA technology[35]
    Fig. 4. Schematic diagram of the MOPA technology[35]
    Schematic diagram of the droplet generator on demand[76]
    Fig. 5. Schematic diagram of the droplet generator on demand[76]
    Schematic diagram of the droplet generator from ASML company [79]
    Fig. 6. Schematic diagram of the droplet generator from ASML company [79]
    Layout of the typical shadow imaging system[78]
    Fig. 7. Layout of the typical shadow imaging system[78]
    Real and imaginary parts of the refractive index of some elements at 13.5 nm[85]
    Fig. 8. Real and imaginary parts of the refractive index of some elements at 13.5 nm[85]
    CE of different target profile created by pre-pulse[35]
    Fig. 9. CE of different target profile created by pre-pulse[35]
    Schematic diagram of the effect of double pulse effect[25]
    Fig. 10. Schematic diagram of the effect of double pulse effect[25]
    Variation curve of CE with CO2 laser pulse energy for different pre-pulses[13]
    Fig. 11. Variation curve of CE with CO2 laser pulse energy for different pre-pulses[13]
    Target expansion created by different pulse length of pre-pulse.(a) Effect created by ns pre-pulse; (b) effect created by ps pre-pulse; (c) EUV emission[34]
    Fig. 12. Target expansion created by different pulse length of pre-pulse.(a) Effect created by ns pre-pulse; (b) effect created by ps pre-pulse; (c) EUV emission[34]
    Spatial distribution of the CO2 laser beam in the BTS. (a) Initial state; (b) not using BEX; (c) using BEX[34]
    Fig. 13. Spatial distribution of the CO2 laser beam in the BTS. (a) Initial state; (b) not using BEX; (c) using BEX[34]
    Comparison of CO2 beam size evolution for different conditions[34]
    Fig. 14. Comparison of CO2 beam size evolution for different conditions[34]
    Influence of the pedestal on the profile of the tin target. (a) Profile of the tin target before and after suppression; (b) laser temporal profile after pedestal suppression[35]
    Fig. 15. Influence of the pedestal on the profile of the tin target. (a) Profile of the tin target before and after suppression; (b) laser temporal profile after pedestal suppression[35]
    Droplet generated by 6 kHz signal based on Rayleigh jet breakup[72]
    Fig. 16. Droplet generated by 6 kHz signal based on Rayleigh jet breakup[72]
    Sensing and control scheme of the droplet position[13]
    Fig. 17. Sensing and control scheme of the droplet position[13]
    Horizontal instability of the droplet[20]
    Fig. 18. Horizontal instability of the droplet[20]
    Vertical instability of the droplet[20]
    Fig. 19. Vertical instability of the droplet[20]
    Nan Lin, Wenhe Yang, Yunyi Chen, Xin Wei, Cheng Wang, Jiaoling Zhao, Yujie Peng, Yuxin Leng. Research Progress and Development Trend of Extreme Ultraviolet Lithography Source[J]. Laser & Optoelectronics Progress, 2022, 59(9): 0922002
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