Owing to the continuous reduction in the chip feature size, supported by a 193 nm excimer light source, the deep ultraviolet immersion lithography has reached a bottleneck. The process route using multiple patterning technology has reached the current commercial limit. To address this issue, extreme ultraviolet lithography (EUVL), employing a 13.5 nm extreme ultraviolet light source, has been successfully used in high-volume manufacturing. Thus, it has become an essential technology for the next-generation lithography commercialization. Herein, the principle and latest developments in the 13.5 nm extreme ultraviolet lithography in laser-produced plasma have been reviewed, and the key subsystems, including the driving laser, target, and collecting mirror, have been introduced. Moreover, major challenges that need to be solved in the further development of laser-produced plasma source have been discussed, including the improvement of the driving power and conversion efficiency as well as the prolongation of the light source life. Finally, the EUVL source devices of Japan's Gigaphoton Company and Holland’s ASML Company have been analyzed.