RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

Lishu Wu; Jiayun Dai; Yuechan Kong; Tangsheng Chen; Tong Zhang

doi:10.1088/1674-4926/43/9/092601

Journals >Journal of Semiconductors >Volume 43 >Issue 9 >Page 092601 > Article

Journal of Semiconductors
Vol. 43, Issue 9, 092601 (2022)

RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

Lishu Wu^1、2, Jiayun Dai², Yuechan Kong², Tangsheng Chen², and Tong Zhang^1、3、*

Author Affiliations

¹Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China

²Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China

³Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology, Ministry of Education, School of Instrument Science and Engineering, Southeast University, Nanjing 210096, China

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DOI: 10.1088/1674-4926/43/9/092601 Cite this Article

Lishu Wu, Jiayun Dai, Yuechan Kong, Tangsheng Chen, Tong Zhang. RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions[J]. Journal of Semiconductors, 2022, 43(9): 092601 Copy Citation Text

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Fig. 1. (Color online) The schematic diagram of InP DHBT device on flexible substrate.

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(a) FIB cross-sectional image of InP DHBT device on flexible substrate with 1μm BCB. (b) FIB cross-sectional image of InP DHBT device on flexible substrate with 100 nm BCB.

Fig. 2. (a) FIB cross-sectional image of InP DHBT device on flexible substrate with 1μm BCB. (b) FIB cross-sectional image of InP DHBT device on flexible substrate with 100 nm BCB.

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Fig. 3. (Color online) Experimental and calculatedR_th for InP DHBT and flexible substrate InP DHBT.

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Fig. 4. (Color online) The correspondingI_C–V_CE of InP DHBT and flexible substrate InP DHBT.

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Fig. 5. (Color online) Mason’s unilateral gainU and |h₂₁|² as a function of frequency measured the InP DHBT and flexible substrate InP DHBT.

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Fig. 6. (Color online) (a) Photographs of InP DHBT on flexible substrate under bending conditions on test bench. The InP DHBT frequency performance under different bending radii: (b)f_T/f_T(flat), (c)f_MAX/f_MAX(flat).

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Device	f_T (GHz)	f_MAX (GHz)	Ref.
Graphene transistor	198	28.2	[13]
InAs MOSFET	105	22.9	[15]
InGaAs/InAlAs HEMT	160	290	[17]
GaAs HBT	37.5	6.9	[24]
GaN HEMT	60	115	[25]
SOI CMOS	150	160	[26]
Si MOFET	5	38	[27]
InP DHBT	337	485	[18]
InP DHBT	358	530	This Work

Table 1. Comparison of thef_T andf_MAX with other previous reported flexible transistors.

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