Researching | RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

Journals >Journal of Semiconductors >Volume 43 >Issue 9 >Page 092601 > Article

Journal of Semiconductors
Vol. 43, Issue 9, 092601 (2022)

RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions

Lishu Wu^1、2, Jiayun Dai², Yuechan Kong², Tangsheng Chen², and Tong Zhang^1、3、*

Author Affiliations

¹Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China

²Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China

³Key Laboratory of Micro-Inertial Instrument and Advanced Navigation Technology, Ministry of Education, School of Instrument Science and Engineering, Southeast University, Nanjing 210096, China

show less

DOI: 10.1088/1674-4926/43/9/092601 Cite this Article

Lishu Wu, Jiayun Dai, Yuechan Kong, Tangsheng Chen, Tong Zhang. RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions[J]. Journal of Semiconductors, 2022, 43(9): 092601 Copy Citation Text

show less

References

[1] K H Cherenack, A Z Kattamis, B Hekmatshoar et al. Amorphous-silicon thin-film transistors fabricated at 300 °C on a free-standing foil substrate of clear plastic. IEEE Electron Device Lett, 28, 1004(2007).

[2] S Saxena, D C Kim, J H Park et al. Polycrystalline silicon thin-film transistor using Xe flash-lamp annealing. IEEE Electron Device Lett, 31, 1242(2010).

[3] B Crone, A Dodabalapur, Y Y Lin et al. Large-scale complementary integrated circuits based on organic transistors. Nature, 403, 521(2000).

[4] U Haas, H Gold, A Haase et al. Submicron pentacene-based organic thin film transistors on flexible substrates. Appl Phys Lett, 91, 043511(2007).

[5] T Takahashi, K Takei, E Adabi et al. Parallel array InAs nanowire transistors for mechanically bendable, ultrahigh frequency electronics. ACS Nano, 4, 5855(2010).

[6] E Menard, R G Nuzzo, J A Rogers. Bendable single crystal silicon thin film transistors formed by printing on plastic substrates. Appl Phys Lett, 86, 093507(2005).

[7] J H Ahn, H S Kim, K J Lee et al. High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates. IEEE Electron Device Lett, 27, 460(2006).

[8] Y M Lin, C Dimitrakopoulos, K A Jenkins et al. 100-GHz transistors from wafer-scale epitaxial graphene. Science, 327, 662(2010).

[9] Y Cao, G J Brady, H Gui et al. Radio frequency transistors using aligned semiconducting carbon nanotubes with current-gain cutoff frequency and maximum oscillation frequency simultaneously greater than 70 GHz. ACS Nano, 10, 6782(2016).

[10] Y G Sun, E Menard, J A Rogers et al. Gigahertz operation in flexible transistors on plastic substrates. Appl Phys Lett, 88, 183509(2006).

[11] D Akinwande, N Petrone, J Hone. Two-dimensional flexible nanoelectronics. Nat Commun, 5, 5678(2014).

[12] K J Lee, M A Meitl, J H Ahn et al. Bendable GaN high electron mobility transistors on plastic substrates. J Appl Phys, 100, 124507(2006).

[13] N Petrone, I Meric, T R Chari et al. Graphene field-effect transistors for radio-frequency flexible electronics. IEEE J Electron Devices Soc, 3, 44(2015).

[14] J Lee, T J Ha, H F Li et al. 25 GHz embedded-gate graphene transistors with high-K dielectrics on extremely flexible plastic sheets. ACS Nano, 7, 7744(2013).

[15] C Wang, J C Chien, H Fang et al. Self-aligned, extremely high frequency III-V metal-oxide-semiconductor field-effect transistors on rigid and flexible substrates. Nano Lett, 12, 4140(2012).

[16] J Shi, N Wichmann, Y Roelens et al. Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate. Appl Phys Lett, 99, 203505(2011).

[17] J Shi, N Wichmann, Y Roelens et al. Electrical characterization of In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions. Appl Phys Lett, 102, 243503(2013).

[18] L S Wu, J Y Dai, Y Wang et al. High performance wafer scale flexible InP double heterogeneous bipolar transistors. Semicond Sci Technol, 36, 03LT02(2021).

[19] Liu W. Thermal-electrical properties. In: Handbook III-V Heterojunction Bipolar Transistors. New York: Wiley, 1998

[20] J M Ruiz-Palmero, U Hammer, H Jäckel et al. Comparative technology assessment of future InP HBT ultrahigh-speed digital circuits. Solid State Electron, 51, 842(2007).

[21] B Niu, Y Wang, W Cheng et al. Common base four-finger InGaAs/InP double heterojunction bipolar transistor with maximum oscillation frequency 535 GHz. Chin Phys Lett, 32, 172(2015).

[22] W Cheng, Y Wang, Y Zhao et al. A THz InGaAs/InP double heterojunction bipolar transistor withfmax= 325 GHz and BVCBO = 10.6 V. J Semicond, 34, 054006(2013).

[23] Y H Jung, T H Chang, H L Zhang et al. High-performance green flexible electronics based on biodegradable cellulose nanofibril paper. Nat Commun, 6, 7170(2015).

[24] Y P Zeng, O Ostinelli, R Lövblom et al. 400-GHz InP/GaAsSb DHBTs with low-noise microwave performance. IEEE Electron Device Lett, 31, 1122(2010).

[25] T H Chang, K L Xiong, S H Park et al. High power fast flexible electronics: Transparent RF AlGaN/GaN HEMTs on plastic substrates. 2015 IEEE MTT-S International Microwave Symposium, 1(2015).

[26] A Lecavelier des Etangs-Levallois, E Dubois, M Lesecq et al. 150-GHz RF SOI-CMOS technology in ultrathin regime on organic substrate. IEEE Electron Device Lett, 32, 1510(2011).

[27] J H Seo, T Ling, S Q Gong et al. Fast flexible transistors with a nanotrench structure. Sci Rep, 6, 24771(2016).

[28] G X Qin, T H Cai, H C Yuan et al. Flexible radio-frequency single-crystal germanium switch on plastic substrates. Appl Phys Lett, 104, 163501(2014).

[29] S J Cho, Y H Jung, Z Q Ma. X-band compatible flexible microwave inductors and capacitors on plastic substrate. IEEE J Electron Devices Soc, 3, 435(2015).

[30] L Sun, G X Qin, H Huang et al. Flexible high-frequency microwave inductors and capacitors integrated on a polyethylene terephthalate substrate. Appl Phys Lett, 96, 013509(2010).

Figures&Tables (7)

References (30)

Copy Citation Text

Lishu Wu, Jiayun Dai, Yuechan Kong, Tangsheng Chen, Tong Zhang. RF characterization of InP double heterojunction bipolar transistors on a flexible substrate under bending conditions[J]. Journal of Semiconductors, 2022, 43(9): 092601

Download Citation

Save the article for my favorites

Paper Information

Recommended Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology

Set citation alerts for the article

Please enter your email address