A review of manufacturing technologies for silicon carbide superjunction devices

Run Tian; Chao Ma; Jingmin Wu; Zhiyu Guo; Xiang Yang; Zhongchao Fan

doi:10.1088/1674-4926/42/6/061801

Journals >Journal of Semiconductors >Volume 42 >Issue 6 >Page 061801 > Article

Journal of Semiconductors
Vol. 42, Issue 6, 061801 (2021)

A review of manufacturing technologies for silicon carbide superjunction devices

Run Tian^1、2, Chao Ma³, Jingmin Wu^1、2, Zhiyu Guo^1、2, Xiang Yang¹, and Zhongchao Fan^1、4

Author Affiliations

¹Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

³University of Electronic Science and Technology of China, Chengdu 610054, China

⁴School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1088/1674-4926/42/6/061801 Cite this Article

Run Tian, Chao Ma, Jingmin Wu, Zhiyu Guo, Xiang Yang, Zhongchao Fan. A review of manufacturing technologies for silicon carbide superjunction devices[J]. Journal of Semiconductors, 2021, 42(6): 061801 Copy Citation Text

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Abstract

Superjunction technology is believed to reach the optimal specific on-resistance and breakdown voltage trade-off. It has become a mainstream technology in silicon high-voltage metal oxide semiconductor field effect transistor devices. Numerous efforts have been conducted to employ the same concept in silicon carbide devices. These works are summarized here.

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