Investigation of current collapse and recovery time due to deep level defect traps in β-Ga2O3 HEMT

R. Singh; T. R. Lenka; R. T. Velpula; B. Jain; H. Q. T. Bui; H. P. T. Nguyen

doi:10.1088/1674-4926/41/10/102802

Journals >Journal of Semiconductors >Volume 41 >Issue 10 >Page 102802 > Article

Journal of Semiconductors
Vol. 41, Issue 10, 102802 (2020)

Investigation of current collapse and recovery time due to deep level defect traps in β-Ga₂O₃ HEMT

R. Singh¹, T. R. Lenka¹, R. T. Velpula², B. Jain²..., H. Q. T. Bui² and H. P. T. Nguyen²|Show fewer author(s)

Author Affiliations

¹Department of Electronics & Communication Engineering, National Institute of Technology Silchar, AS, 788010, India

²Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, 07102, USA

show less

DOI: 10.1088/1674-4926/41/10/102802 Cite this Article

R. Singh, T. R. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui, H. P. T. Nguyen. Investigation of current collapse and recovery time due to deep level defect traps in β-Ga₂O₃ HEMT[J]. Journal of Semiconductors, 2020, 41(10): 102802 Copy Citation Text

EndNote(RIS)

BibTex

Plain Text

show less

Fig. 1. (Color online) Schematic cross sectional view of the analysed device structure.

Download full size | View in the Article

Fig. 2. (Color online) Pre-stress and post-stress bias voltages at gate and drain terminals.

Download full size | View in the Article

Fig. 3. (Color online) Pre-stress and post-stress drain current. Inset: current collapse.

Download full size | View in the Article

Fig. 4. (Color online) Trapping and de-trapping of defect trap under gate stress.

Download full size | View in the Article

Fig. 5. (Color online) Drain stress and recovery of current recovery due to de-population of traps.

Download full size | View in the Article

Fig. 6. (Color online) Current collapse and recovery curve, showing intentional doped Fe causes most of the current collapse and Ge doping caused current collapse takes approximately 2 h to attain steady state value.

Download full size | View in the Article

Fig. 7. (Color online) Ionised trap density horizontally at a depth of 0.5 μm in the substrate.

Download full size | View in the Article

Reference	Trap energy levels (eV)	Capture cross section (10⁻¹⁴ cm^–2)	Trap source	Trap concentration (10¹⁵ cm^–3)	Current collapse/ recovery time
[12]	EC – 0.78	0.7	Fe-doped substrate ( 01)	10	Moderate/ few seconds
[12]	EC – 0.75	5	Fe-doped substrate ( 01)	10	Moderate/ few minutes
[9]	EC – 0.98	0.1− 9	Ge-doped PAMBE on (010) substrate	1.6	Mild/ ~ 1 h
[10]	EC – 0.82	1	UID bulk EFG wafer (010)	36	Severe/ ~ 10 min

Table 1. Deep level traps reported in β-Ga₂O₃ substrate and epitaxial layer, energy level, capture cross section and trap concentration. Fe and Ge enabled current collapse and drain current recovery time to pre-stress condition.