Progress of Doping in Ga2O3 Materials

Dan Wang; Xiaodan Wang; Hai Ma; Huajun Chen; Hongmin Mao; Xionghui Zeng

doi:10.3788/LOP202158.1516025

Journals >Laser & Optoelectronics Progress >Volume 58 >Issue 15 >Page 1516025 > Article

Laser & Optoelectronics Progress
Vol. 58, Issue 15, 1516025 (2021)

Progress of Doping in Ga₂O₃ Materials

Dan Wang¹, Xiaodan Wang^1、*, Hai Ma¹, Huajun Chen¹, Hongmin Mao¹, and Xionghui Zeng²

Author Affiliations

¹Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China

²Suzhou Institute of Nanotechnology and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China

show less

DOI: 10.3788/LOP202158.1516025 Cite this Article Set citation alerts

Dan Wang, Xiaodan Wang, Hai Ma, Huajun Chen, Hongmin Mao, Xionghui Zeng. Progress of Doping in Ga₂O₃ Materials[J]. Laser & Optoelectronics Progress, 2021, 58(15): 1516025 Copy Citation Text

show less

Fig. 1. β-Ga₂O₃ structure^[26]

Download full size

Below band-gap excitation mechanism of rare earth ions (Eu3+, Er3+, and Nd3+) in Ga2O3[30]

Fig. 2. Below band-gap excitation mechanism of rare earth ions (Eu³⁺, Er³⁺, and Nd³⁺) in Ga₂O₃^[30]

Download full size

Fig. 3. Spectra of Ga_1.96Dy_0.04O₃ and Ga_1.86Dy_0.04O₃∶0.1 Li⁺ after 900 ℃ annealing^[32]

Download full size

Fig. 4. PL radiation mechanism diagram of Zn, Mg:Ga₂O₃ thin film^[50]

Download full size

Ga₂O₃ type	Growth method	Growth temperature /℃	Growth rate	Impurity content	Crystal quality
Thin film	PLD	500^［19］	3‒4 nm/min @500 ℃^［20］	High	—
	MOCVD	650‒800^［21］	3‒4 nm/min @700 ℃^［20］	Low
	MBE	650^［22］	3‒4 nm/min @600 ℃^［20］	Low
Single crystal	EFG	1793^［10］	6‒15 mm/h^［23］	—	Good
	FZ		5‒10 mm/h^［24］		Medium
	CZ		1‒2 mm/h^［25］		Good

Table 1. Several common methods of preparing Ga₂O₃

Rare earth	Position	Symmetry	Reference
Eu	Ga_Ⅱ	O_h	［19， 27‒28］
Er			［29］
Nd			［30］

Table 2. Position and symmetry of rare earth ions in gallium oxide lattice

Impurity	n /cm^-3	μ /（cm²·V^-1·S^-1）	E_d /meV	Reference
Si	1.0×10¹⁷‒1.7×10²⁰	26‒130	15‒50	［22， 37‒40］
Sn	4.0×10¹⁷‒1.0×10²⁰	10‒100	7.4‒60	［36‒38， 41‒44］
Ge	4.0×10¹⁷‒1.6×10¹⁸	97‒111	17.5	［36‒37］
Nb	9.5×10¹⁶‒1.8×10¹⁹	30‒80	30‒150	［15， 45］
Ta	3.6×10¹⁶‒3.0×10¹⁹	50‒100	—	［46］

Table 3. Shallow donor impurities in Ga₂O₃

Dan Wang, Xiaodan Wang, Hai Ma, Huajun Chen, Hongmin Mao, Xionghui Zeng. Progress of Doping in Ga₂O₃ Materials[J]. Laser & Optoelectronics Progress, 2021, 58(15): 1516025

Download Citation

Set citation alerts for the article

Tools

Set citation alerts for the article

Save the article for my favorites

Paper Information