Progress of Doping in Ga2O3 Materials

Dan Wang; Xiaodan Wang; Hai Ma; Huajun Chen; Hongmin Mao; Xionghui Zeng

doi:10.3788/LOP202158.1516025

Journals >Laser & Optoelectronics Progress >Volume 58 >Issue 15 >Page 1516025 > Article

Laser & Optoelectronics Progress
Vol. 58, Issue 15, 1516025 (2021)

Progress of Doping in Ga₂O₃ Materials

Dan Wang¹, Xiaodan Wang^1、*, Hai Ma¹, Huajun Chen¹, Hongmin Mao¹, and Xionghui Zeng²

Author Affiliations

¹Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu 215009, China

²Suzhou Institute of Nanotechnology and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China

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DOI: 10.3788/LOP202158.1516025 Cite this Article Set citation alerts

Dan Wang, Xiaodan Wang, Hai Ma, Huajun Chen, Hongmin Mao, Xionghui Zeng. Progress of Doping in Ga₂O₃ Materials[J]. Laser & Optoelectronics Progress, 2021, 58(15): 1516025 Copy Citation Text

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Dan Wang, Xiaodan Wang, Hai Ma, Huajun Chen, Hongmin Mao, Xionghui Zeng. Progress of Doping in Ga₂O₃ Materials[J]. Laser & Optoelectronics Progress, 2021, 58(15): 1516025

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