[1] K S Novoselov, A K Geim, S V Morozov et al. Electric field effect in atomically thin carbon films. Science, 306, 666(2004).
[2] B Radisavljevic, A Radenovic, J Brivio et al. Single-layer MoS2 transistors. Nat Nanotechnol, 6, 147(2011).
[3] Q H Wang, K Kalantar-Zadeh, A Kis et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol, 7, 699(2012).
[4] G Wu, X Wang, Y Chen et al. MoTe2 p–n homojunctions defined by ferroelectric polarization. Adv Mater, 32, 1907937(2020).
[5] L Tu, R Cao, X Wang et al. Ultrasensitive negative capacitance phototransistors. Nat Commun, 11, 101(2020).
[6] G Wu, B Tian, L Liu et al. Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains. Nat Electron, 3, 43(2020).
[7] S B Desai, S R Madhvapathy, A B Sachid et al. MoS2 transistors with 1-nanometer gate lengths. Science, 354, 99(2016).
[8] F Ahmed, M S Choi, X Liu et al. Carrier transport at the metal-MoS2 interface. Nanoscale, 7, 9222(2015).
[9] B W Baugher, H O Churchill, Y Yang et al. Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2. Nano Lett, 13, 4212(2013).
[10]
[11] H Liu, A T Neal, P D Ye. Channel length scaling of MoS2 MOSFETs. ACS Nano, 6, 8563(2012).
[12] C Lee, H Yan, L E Brus et al. Anomalous lattice vibrations of single- and few-layer MoS2. ACS Nano, 4, 2695(2010).
[13] K F Mak, C Lee, J Hone et al. Atomically thin MoS2: A new direct-gap semiconductor. Phys Rev Lett, 105, 136805(2010).
[14] S W Han, H Kwon, S K Kim et al. Band-gap transition induced by interlayer van der Waals interaction in MoS2. Phys Rev B, 84, S312(2011).
[15] P Bolshakov, A Khosravi, P Zhao et al. Dual-gate MoS2 transistors with sub-10 nm top-gate high-
[16] X Zou, J Xu, H Huang et al. A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2. Nanotechnology, 29, 245201(2018).
[17] A Nourbakhsh, A Zubair, S Huang et al. 15-nm channel length MoS2 FETs with single-and double-gate structures. 2015 Symposium on VLSI Technology (VLSI Technology), T28(2015).
[18] G H Lee, X Cui, Y D Kim et al. Highly stable, dual-gated MoS2 transistors encapsulated by hexagonal boron nitride with gate-controllable contact, resistance, and threshold voltage. ACS Nano, 9, 7019(2015).
[19] H Liu, P D Ye. MoS2 dual-gate MOSFET with atomic-layer-deposited Al2O3 as top-gate dielectric. IEEE Electron Device Lett, 33, 546(2012).
[20] F Liao, J Deng, X Chen et al. A dual-gate MoS2 photodetector based on interface coupling effect. Small, 16, 1904369(2020).
[21] F Liao, Z Guo, Y Wang et al. High-performance logic and memory devices based on a dual-gated MoS2 architecture. ACS Appl Electron Mater, 2, 111(2020).
[22] F Liao, Y Sheng, Z Guo et al. MoS2 dual-gate transistors with electrostatically doped contacts. Nano Res, 12, 2515(2019).
[23] W Bao, G Liu, Z Zhao et al. Lithography-free fabrication of high quality substrate-supported and freestanding graphene devices. Nano Res, 3, 98(2010).
[24] S Das, H Y Chen, A V Penumatcha et al. High performance multilayer MoS2 transistors with scandium contacts. Nano Lett, 13, 100(2013).
[25] Y Liu, J Guo, E Zhu et al. Approaching the Schottky–Mott limit in van der Waals metal –semiconductor junctions. Nature, 557, 696(2018).
[26] W Bao, X Cai, D Kim et al. High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects. Appl Phys Lett, 102, 042104(2012).
[27] M W Lin, I I Kravchenko, J Fowlkes et al. Thickness-dependent charge transport in few-layer MoS2 field-effect transistors. Nanotechnology, 27, 165203(2016).
[28] M G Anconaand, G J Iafrate. Quantum correction to the equation of state of an electron gas in a semiconductor. Phys Rev B, 39, 9536(1989).
[29] K Uchida, J Koga, S Takagib. Experimental study on electron mobility in ultrathin-body silicon-on-insulator metal–oxide–semiconductor field-effect transistors. J Appl Phys, 102, 074510(2007).
[30] R Fivaz, E Mooser. Mobility of charge carriers in semiconducting layer structures. Phys Rev, 163, 743(1967).
[31] K Kaasbjerg, K S Thygesen, K W Jacobsen. Phonon-limited mobility in n-type single-layer MoS2 from first principles. Phys Rev B, 85, 115317(2012).
[32] N Ma, D Jena. Charge scattering and mobility in atomically thin semiconductors. Phys Rev X, 4, 011043(2014).
[33] Z Y Ong, M V Fischetti. Mobility enhancement and temperature dependence in top-gated single-layer MoS2. Physics, 88, 1653(2013).