Contents
2020
Volume: 41 Issue 7
11 Article(s)

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Articles
Metal–insulator transition in few-layered GaTe transistors
Xiuxin Xia, Xiaoxi Li, and Hanwen Wang
Journal of Semiconductors
  • Publication Date: Jul. 01, 2020
  • Vol. 41, Issue 7, 072902 (2020)
Mn doping effects on the gate-tunable transport properties of Cd3As2 films epitaxied on GaAs
Hailong Wang, Jialin Ma, Qiqi Wei, and Jianhua Zhao
Journal of Semiconductors
  • Publication Date: Jul. 01, 2020
  • Vol. 41, Issue 7, 072903 (2020)
Charge transport and quantum confinement in MoS2 dual-gated transistors
Fuyou Liao, Hongjuan Wang, Xiaojiao Guo, Zhongxun Guo, Ling Tong, Antoine Riaud, Yaochen Sheng, Lin Chen, Qingqing Sun, Peng Zhou, David Wei Zhang, Yang Chai, Xiangwei Jiang, Yan Liu, and Wenzhong Bao
Journal of Semiconductors
  • Publication Date: Jul. 01, 2020
  • Vol. 41, Issue 7, 072904 (2020)
Graphene plasmonic nanoresonators/graphene heterostructures for efficient room-temperature infrared photodetection
Tian Sun, Weiliang Ma, Donghua Liu, Xiaozhi Bao, Babar Shabbir, Jian Yuan, Shaojuan Li, Dacheng Wei, and Qiaoliang Bao
High-performance infrared (IR) photodetectors made by low dimensional materials promise a wide range of applications in communication, security and biomedicine. Moreover, light-harvesting effects based on novel plasmonic materials and their combinations with two-dimensional (2D) materials have raised tremendous interes
Journal of Semiconductors
  • Publication Date: Jul. 01, 2020
  • Vol. 41, Issue 7, 072907 (2020)
Editorial
Preface to the Special Issue on Quantum Transport in Mesoscopic Systems
Yu Ye, and Zheng Han
Journal of Semiconductors
  • Publication Date: Jul. 01, 2020
  • Vol. 41, Issue 7, 070101 (2020)
News and Views
Ohmic contacts for atomically-thin transition metal dichalcogenide semiconductors
Ning Wang
Journal of Semiconductors
  • Publication Date: Jul. 01, 2020
  • Vol. 41, Issue 7, 070401 (2020)
Controlling spins in silicon quantum dots
Haiou Li, Xin Zhang, and Guoping Guo
Journal of Semiconductors
  • Publication Date: Jul. 01, 2020
  • Vol. 41, Issue 7, 070402 (2020)
Reviews
Contact engineering for two-dimensional semiconductors
Peng Zhang, Yiwei Zhang, Yi Wei, Huaning Jiang, Xingguo Wang, and Yongji Gong
Two-dimensional (2D) layered materials, including graphene, black phosphorus (BP) and transition metal dichalcogenide (TMD) such as molybdenum disulfide (MoS2), tungsten diselenide (WSe2), have attracted increasing attention for the application in electronic and optoelectronic devices. Contacts, which are the communica
Journal of Semiconductors
  • Publication Date: Jul. 01, 2020
  • Vol. 41, Issue 7, 071901 (2020)