High-performance RF Switch in 0.13 μm RF SOI process

Hong Guan; Hao Sun; Junlin Bao; Zhipeng Wang; Shuguang Zhou; Hongwei Zhu

doi:10.1088/1674-4926/40/2/022401

Journals >Journal of Semiconductors >Volume 40 >Issue 2 >Page 022401 > Article

Journal of Semiconductors
Vol. 40, Issue 2, 022401 (2019)

High-performance RF Switch in 0.13 μm RF SOI process

Hong Guan¹, Hao Sun², Junlin Bao¹, Zhipeng Wang², Shuguang Zhou², and Hongwei Zhu²

Author Affiliations

¹School of Microelectronics, Xidian University, Xi’an 710000, China

²Semiconductor Manufacturing International Corporation, Shanghai 201203, China

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DOI: 10.1088/1674-4926/40/2/022401 Cite this Article

Hong Guan, Hao Sun, Junlin Bao, Zhipeng Wang, Shuguang Zhou, Hongwei Zhu. High-performance RF Switch in 0.13 μm RF SOI process[J]. Journal of Semiconductors, 2019, 40(2): 022401 Copy Citation Text

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Fig. 1. (Color online) Simplified capacitive models.

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Fig. 2. Proposed RF switch.

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Fig. 3. (Color online) (a) Simulated IL for varying widths of NFETs at 0.9 and 1.9 GHz. (b) Simulated ISO for varying widths of NFETs at 0.9 and 1.9 GHz.

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Fig. 4. (Color online) Photomicrograph of RF switch chip.

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Fig. 5. Measured R_on × C_off for RF switch.

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Fig. 6. (Color online) Measured IL for RF switch.

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Fig. 7. (Color online) Measured ISO for RF switch.

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Fig. 8. (Color online) Measured P_{0.1 dB} for RF switch.

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Fig. 9. (Color online) Measured harmonics for RF switch.

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Reference	[7]	[9]	[10]	[11]	[12]	This work
RF switch	SP10T	SPDT	SP6T	PNP SPST	SPST	SPST
Freq (GHz)	0.9/1.9	1	0.9/1.9	1	2.55	0.9/1.9
IL (dB)	0.48/0.81	0.4	0.7/0.7	1.6	1.8	0.24/0.34
ISO (dB)	43.1/40	40	40/30	36	41	28.8/22.4
P_{0.1 dB}(dB)	36	—	36	—	23.2(P_{1 dB})	36
Technology	0.18 μm SOI	HR SOI	0.13 μm SOI	0.25 μm SiGe BiCMOS	65 nm CMOS	0.13 μm SOI

Table 1. Comparison of RF switch performance.

Hong Guan, Hao Sun, Junlin Bao, Zhipeng Wang, Shuguang Zhou, Hongwei Zhu. High-performance RF Switch in 0.13 μm RF SOI process[J]. Journal of Semiconductors, 2019, 40(2): 022401

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