Hong Guan, Hao Sun, Junlin Bao, Zhipeng Wang, Shuguang Zhou, Hongwei Zhu. High-performance RF Switch in 0.13 μm RF SOI process[J]. Journal of Semiconductors, 2019, 40(2): 022401

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- Journal of Semiconductors
- Vol. 40, Issue 2, 022401 (2019)

Fig. 1. (Color online) Simplified capacitive models.

Fig. 2. Proposed RF switch.

Fig. 3. (Color online) (a) Simulated IL for varying widths of NFETs at 0.9 and 1.9 GHz. (b) Simulated ISO for varying widths of NFETs at 0.9 and 1.9 GHz.

Fig. 4. (Color online) Photomicrograph of RF switch chip.

Fig. 5. Measured R on × C off for RF switch.

Fig. 6. (Color online) Measured IL for RF switch.

Fig. 7. (Color online) Measured ISO for RF switch.

Fig. 8. (Color online) Measured P 0.1 dB for RF switch.

Fig. 9. (Color online) Measured harmonics for RF switch.
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Table 1. Comparison of RF switch performance.

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