[1] R. Pillarisetty. Academic and industry research progress in germanium nanodevices. Nature, 479, 324-328(2011).
[2] C. Sun, M. T. Wade, Y. Lee, J. S. Orcutt, L. Alloatti, M. S. Georgas, A. S. Waterman, J. M. Shainline, R. R. Avizienis, S. Lin, B. R. Moss, R. Kumar, F. Pavanello, A. H. Atabaki, H. M. Cook, A. J. Ou, J. C. Leu, Y.-H. Chen, K. Asanović, R. J. Ram, M. A. Popović, V. M. Stojanović. Single-chip microprocessor that communicates directly using light. Nature, 528, 534-538(2015).
[3] P. Chaisakul, D. Marris-Morini, J. Frigerio, D. Chrastina, M.-S. Rouifed, S. Cecchi, P. Crozat, G. Isella, L. Vivien. Integrated germanium optical interconnects on silicon substrates. Nat. Photonics, 8, 482-488(2014).
[4] J. Michel, J. Liu, L. C. Kimerling. High-performance Ge-on-Si photodetectors. Nat. Photonics, 4, 527-534(2010).
[5] J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, J. Michel. Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators. Nat. Photonics, 2, 433-437(2008).
[6] R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, J. Michel. An electrically pumped germanium laser. Opt. Express, 20, 11316-11320(2012).
[7] R. Camacho-Aguilera, Z. Han, Y. Cai, L. C. Kimerling, J. Michel. Direct band gap narrowing in highly doped Ge. Appl. Phys. Lett., 102, 152106(2013).
[8] R. Soref. Group IV photonics: Enabling 2 μm communications. Nat. Photonics, 9, 358-359(2015).
[9] R. Soref. Mid-infrared photonics in silicon and germanium. Nat. Photonics, 4, 495-497(2010).
[10] J. Kang, X. Yu, M. Takenaka, S. Takagi. Impact of thermal annealing on Ge-on-Insulator substrate fabricated by wafer bonding. Mater. Sci. Semicond. Process., 42, 259-263(2016).
[11] V. Reboud, A. Gassenq, J. M. Hartmann, J. Widiez, L. Virot, J. Aubin, K. Guilloy, S. Tardif, J. M. Fédéli, N. Pauc, A. Chelnokov, V. Calvo. Germanium based photonic components toward a full silicon/germanium photonic platform. Prog. Cryst. Growth Charact. Mater., 63, 1-24(2017).
[12] H. Wu, P. D. Ye. Fully depleted Ge CMOS devices and logic circuits on Si. IEEE Trans. Electron Devices, 63, 3028-3035(2016).
[13] G. Taraschi, T. A. Langdo, M. T. Currie, E. A. Fitzgerald, D. A. Antoniadis. Relaxed SiGe-on-insulator fabricated via wafer bonding and etch back. J. Vac. Sci. Technol. B, 20, 725-727(2002).
[14] W. Li, P. Anantha, S. Bao, K. H. Lee, X. Guo, T. Hu, L. Zhang, H. Wang, R. Soref, C. S. Tan. Germanium-on-silicon nitride waveguides for mid-infrared integrated photonics. Appl. Phys. Lett., 109, 241101(2016).
[15] D. S. Yu, H. L. Kao, A. Chin, S. P. McAlister. Performance and potential of germanium on insulator field-effect transistors. J. Vac. Sci. Technol. A, 24, 690-693(2006).
[16] Y. Moriyama, K. Ikeda, S. Takeuchi, Y. Kamimuta, Y. Nakamura, K. Izunome, A. Sakai, T. Tezuka. Ultrathin-body Ge-on-insulator wafers fabricated with strongly bonded thin Al2O3/SiO2 hybrid buried oxide layers. Appl. Phys. Express, 7, 086501(2014).
[17] L. Zhang, A. M. Agarwal, L. C. Kimerling, J. Michel. Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared. Nanophotonics, 3, 247-268(2014).
[18] J. R. Jain, D.-S. Ly-Gagnon, K. C. Balram, J. S. White, M. L. Brongersma, D. A. B. Miller, R. T. Howe. Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics. Opt. Mater. Express, 1, 1121-1126(2011).
[19] K. Tani, S.-I. Saito, Y. Lee, K. Oda, T. Mine, T. Sugawara, T. Ido. Light detection and emission in germanium-on-insulator diodes. Jpn. J. Appl. Phys., 51, 04DG09(2012).
[20] J. H. Nam, F. Afshinmanesh, D. Nam, W. S. Jung, T. I. Kamins, M. L. Brongersma, K. C. Saraswat. Monolithic integration of germanium-on-insulator p-i-n photodetector on silicon. Opt Express, 23, 15816-15823(2015).
[21] L. Chen, P. Dong, M. Lipson. High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding. Opt. Express, 16, 11513-11518(2008).
[22] J. Kang, M. Takenaka, S. Takagi. Novel Ge waveguide platform on Ge-on-insulator wafer for mid-infrared photonic integrated circuits. Opt. Express, 24, 11855-11864(2016).
[23] A. Gassenq, K. Guilloy, G. Osvaldo Dias, N. Pauc, D. Rouchon, J. M. Hartmann, J. Widiez, S. Tardif, F. Rieutord, J. Escalante, I. Duchemin, Y. M. Niquet, R. Geiger, T. Zabel, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, V. Calvo. 1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications. Appl. Phys. Lett., 107, 191904(2015).
[24] V. Reboud, A. Gassenq, K. Guilloy, G. Osvaldo Dias, J. M. Escalante, S. Tardif, N. Pauc, J. M. Hartmann, J. Widiez, E. Gomez, E. Bellet Amalric, D. Fowler, D. Rouchon, I. Duchemin, Y. M. Niquet, F. Rieutord, J. Faist, R. Geiger, T. Zabel, E. Marin, H. Sigg, A. Chelnokov, V. Calvo. Ultra-high amplified strain on 200 mm optical Germanium-On-Insulator (GeOI) substrates: towards CMOS compatible Ge lasers. Proc. SPIE, 9752, 97520F(2016).
[25] S. Bao, K. H. Lee, C. Wang, B. Wang, R. I. Made, S. F. Yoon, J. Michel, E. Fitzgerald, C. S. Tan. Germanium-on-insulator virtual substrate for InGaP epitaxy. Mater. Sci. Semicond. Process., 58, 15-21(2017).
[26] K. H. Lee, S. Bao, G. Y. Chong, Y. H. Tan, E. A. Fitzgerald, C. S. Tan. Fabrication and characterization of germanium-on-insulator through epitaxy, bonding, and layer transfer. J. Appl. Phys., 116, 103506(2014).
[27] K. H. Lee, S. Bao, Y. Lin, W. Li, P. Anantha, L. Zhang, Y. Wang, J. Michel, E. A. Fitzgerald, C. S. Tan. Hetero-epitaxy of high quality germanium film on silicon substrate for optoelectronic integrated circuit applications. J. Mater. Res., 1-16(2017).
[28] S. R. Hyun-Yong Yu, W. S. Jung, A. K. Okyay, D. A. B. Miller, K. C. Saraswat. High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration. IEEE Electron Device Lett., 30, 1161-1163(2009).
[29] Y. Hoshi, K. Sawano, K. Hamaya, M. Miyao, Y. Shiraki. Formation of tensilely strained germanium-on-insulator. Appl. Phys. Express, 5, 015701(2012).
[30] K.-W. Ang, J. W. Ng, G.-Q. Lo, D.-L. Kwong. Impact of field-enhanced band-traps-band tunneling on the dark current generation in germanium p-i-n photodetector. Appl. Phys. Lett., 94, 223515(2009).
[31] Y. Dong, W. Wang, D. Lei, X. Gong, Q. Zhou, S. Y. Lee, W. K. Loke, S.-F. Yoon, E. S. Tok, G. Liang, Y.-C. Yeo. Suppression of dark current in germanium-tin on silicon p-i-n photodiode by a silicon surface passivation technique. Opt. Express, 23, 18611-18619(2015).
[32] K. H. Lee, S. Bao, G. Y. Chong, Y. H. Tan, E. A. Fitzgerald, C. S. Tan. Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient. APL Mater., 3, 016102(2015).
[33] L. Colace, M. Balbi, G. Masini, G. Assanto, H.-C. Luan, L. C. Kimerling. Ge on Si p-i-n photodiodes operating at 10Gbit/s. Appl. Phys. Lett., 88, 101111(2006).
[34] L. Colace, G. Masini, G. Assanto, H.-C. Luan, K. Wada, L. C. Kimerling. Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates. Appl. Phys. Lett., 76, 1231-1233(2000).
[35] Z. Zhou, J. He, R. Wang, C. Li, J. Yu. Normal incidence p-i–n Ge heterojunction photodiodes on Si substrate grown by ultrahigh vacuum chemical vapor deposition. Opt. Commun., 283, 3404-3407(2010).
[36] C. Li, C. Xue, Z. Liu, B. Cheng, C. Li, Q. Wang. High-bandwidth and high-responsivity top-illuminated germanium photodiodes for optical interconnection. IEEE Trans. Electron Devices, 60, 1183-1187(2013).
[37] D. Suh, S. Kim, J. Joo, G. Kim. 36-GHz high-responsivity Ge photodetectors grown by RPCVD. IEEE Photon. Technol. Lett., 21, 672-674(2009).
[38] C. G. Van de Walle. Band lineups and deformation potentials in the model-solid theory. Phys. Rev. B, 39, 1871-1883(1989).
[39] S. L. Chuang. Physics of Photonic Devices, 840(2009).
[40] J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, L. C. Kimerling. Deformation potential constants of biaxially tensile stressed Geepitaxial films onSi(100). Phys. Rev. B, 70, 155309(2004).
[41] J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, L. C. Kimerling. Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications. Appl. Phys. Lett., 87, 011110(2005).
[42] J. Liu, J. Michel, W. Giziewicz, D. Pan, K. Wada, D. D. Cannon, S. Jongthammanurak, D. T. Danielson, L. C. Kimerling, J. Chen, F. O. M. Ilday, F. X. Kärtner, J. Yasaitis. High-performance, tensile-strained Ge p-i-n photodetectors on a Si platform. Appl. Phys. Lett., 87, 103501(2005).
[43] M. Jutzi, M. Berroth, G. Wohl, M. Oehme, E. Kasper. Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth. IEEE Photon. Technol. Lett., 17, 1510-1512(2005).