High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform

Yiding Lin; Kwang Hong Lee; Shuyu Bao; Xin Guo; Hong Wang; Jurgen Michel; Chuan Seng Tan

doi:10.1364/PRJ.5.000702

Journals >Photonics Research >Volume 5 >Issue 6 >Page 702 > Article

Photonics Research
Vol. 5, Issue 6, 702 (2017)

High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform

Yiding Lin^1、2、3, Kwang Hong Lee², Shuyu Bao^1、2, Xin Guo¹, Hong Wang¹, Jurgen Michel^2、4, and Chuan Seng Tan^1、2、*

Author Affiliations

¹School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

²Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore

³e-mail: liny0075@e.ntu.edu.sg

⁴Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

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DOI: 10.1364/PRJ.5.000702 Cite this Article Set citation alerts

Yiding Lin, Kwang Hong Lee, Shuyu Bao, Xin Guo, Hong Wang, Jurgen Michel, Chuan Seng Tan. High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform[J]. Photonics Research, 2017, 5(6): 702 Copy Citation Text

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