Li Zhang, Haitao Qi, Hongjuan Cheng, Lei Jin, Yuezeng Shi. Preparation and characterization of AlN seeds for homogeneous growth[J]. Journal of Semiconductors, 2019, 40(10): 102801
- Journal of Semiconductors
- Vol. 40, Issue 10, 102801 (2019)
Fig. 1. (Color online) (a) AlN single crystal. (b) AlN samples. (c) R a of AlN sample at area of 10 × 10 μ m2.
Fig. 2. (Color online) Raman spectrum of AlN samples. (a) Wavelength from 100 to 1000 nm. (b) Detailed E 2 (high) phone mode peaks.
Fig. 3. (Color online) HRXRD of AlN samples (a) (0002) plane and (b) (
Fig. 4. (Color online) Schematic diagrams of AlN single crystal grown on Si-polar SiC seed. (a) SiC macroscopic steps and deposited AlN 3D islands. (b) AlN 3D islands lateral overgrowth and dislocation formation. (c, d) Cavity movement and dislocation "annihilation".
Fig. 5. SEM images of AlN samples etched in KOH/NaOH melt solution at 320 °C for 3 min. (a) Sample I. (b) Sample II. (c) Sample III.
Set citation alerts for the article
Please enter your email address
© Copyright 2018-2021 | Chinese Laser Press. All Rights Reserved 沪ICP备15018463号-20