Contents
2019
Volume: 40 Issue 10
15 Article(s)

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Articles
Comments and Opinions
Progress in integrating III–V semiconductors on silicon could drive silicon photonics forward
Xinlun Cai
Journal of Semiconductors
  • Publication Date: Oct. 01, 2019
  • Vol. 40, Issue 10, 100301 (2019)
Editorial
Preface to the Special Topic on Compound Semiconductor Materials and Devices on Si
Huiyun Liu, Yikai Su, Chuanbo Li, and Xuhan Guo
Journal of Semiconductors
  • Publication Date: Oct. 01, 2019
  • Vol. 40, Issue 10, 100101 (2019)
News and Views
Silicon polarization switch based on symmetric polarization splitter-rotators
Defen Guo, Kang Hou, Weijie Tang, and Tao Chu
Journal of Semiconductors
  • Publication Date: Oct. 01, 2019
  • Vol. 40, Issue 10, 100401 (2019)
Research Highlight
Miniaturizing spectrometers to nanoscale
Journal of Semiconductors
  • Publication Date: Oct. 01, 2019
  • Vol. 40, Issue 10, 100201 (2019)
Mid-infrared lasers on silicon operating close to room temperature
Journal of Semiconductors
  • Publication Date: Oct. 01, 2019
  • Vol. 40, Issue 10, 100202 (2019)
Reviews
III–V ternary nanowires on Si substrates: growth, characterization and device applications
Giorgos Boras, Xuezhe Yu, and Huiyun Liu
Over the past decades, the progress in the growth of materials which can be applied to cutting-edge technologies in the field of electronics, optoelectronics and energy harvesting has been remarkable. Among the various materials, group III–V semiconductors are of particular interest and have been widely investigated du
Journal of Semiconductors
  • Publication Date: Oct. 01, 2019
  • Vol. 40, Issue 10, 101301 (2019)
Perspective: optically-pumped III–V quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates
Wenqi Wei, Qi Feng, Zihao Wang, Ting Wang, and Jianjun Zhang
Journal of Semiconductors
  • Publication Date: Oct. 01, 2019
  • Vol. 40, Issue 10, 101303 (2019)