Abstract
1. Introduction
Gallium nitride (GaN) has many noticeable characteristics, such as a wide band gap of 3.4 eV, a high electric breakdown field of 3.3 × 106 V/cm, and a high electron saturation velocity of 2.7 × 107 cm/s, which have led it to be widely applied in optoelectronic devices and power electronic devices. The great success of GaN LEDs is based on their heteroepitaxy structures, even though they have many defects and dislocations due to lattice mismatches. To improve the performance of optoelectronic and power electronic devices, the homoepitaxy GaN device is a promising way of using GaN substrates.
GaN bulk crystals are difficult to obtain by conventional melt solidification crystal growth processes[
Commercial 2 inch GaN substrates produced by HVPE with a thread dislocation density (TDD) in the order of 106 cm–3 are already available from many corporations, and 4 inch or larger scale GaN substrates are also available on the market. In addition, via homebulit HVPE, the lowest TDD 3 × 102 cm–2, of 5 mm-thick 2 inch GaN has been obtained by pit-assisted growth[
HVPE equipment is a key factor to obtain a high-quality GaN substrate. Consequently, equipment vendors have launched commercial equipment to produce GaN substrates of various sizes. Meanwhile, prototype HVPE equipment for higher quality GaN substrates are also in development. In our paper, we review the commercial and prototype HVPE systems for GaN substrates. Finally, we will share our thoughts about the development about HVPE equipment in the future.
2. The principle of HVPE
HVPE is a chemical vapor deposition technology that uses hydride (AsH3, PH3, NH3) and chloride (GaCl, GaCl3, InCl) as source materials for the reaction. According to the function, the HVPE reactor chamber can be divided into two zones: a low-temperature feedstock zone and a high-temperature growth zone, where chemical reaction processes can be described as follows:
High-purity HCl gas reacts with liquid Ga in the low-temperature feedstock zone (~ 850 °C) to generate GaCl gas with a small amount of by-product, which is transported by N2 or other carrier gas to the high-temperature growth region (~ 1050 °C) where GaCl and NH3 are mixed and reacted. The reaction product, GaN, is then deposited on the substrate to form GaN film. The chemical reactions are:
Low-temperature feedstock zone:
High-temperature growth zone:
The HVPE reactor system is mainly composed of a gas supply system, a reaction chamber, a heating system, and an exhaust gas system. According to the direction of gas flow in reaction chamber, the HVPE reactor can be divided into two types: vertical HVPE reactors and horizontal HVPE reactors. Fig. 1 shows schematic diagrams of two kinds of typical HVPE reactor.
Figure 1.Schematic view of (a) horizontal HVPE reactor and (b) vertical HVPE reactor.
3. Commercial HVPE
Since HVPE was first applied in the growth of Ⅲ-nitride semiconductor in the last century[
The earliest commercial HVPE equipment was the Aixtron AIX-HVPE horizontal quartz reactor[
Figure 2.Reactor geometry of Aixtron AIX-HVPE horizontal quartz reactors.
A vertical HVPE system that was developed by AIXTRON was commercialized in 2007s[
Figure 3.(Color online) AIXTRON vertical HVPE system. (a) Concentric inlet geometry. (b) Schematic sketch of its reactor components.
Some specific designs have been developed to improve the total growth rate and growth uniformity. The inlet design is concentric and two sheath flows are designed to avoid pre-reaction between two reactive species GaCl and NH3, and to reduce parasitic deposition on the wall and reactor volume. The GaN seed holder can be raised upwards by the boule retraction unit as the GaN film epitaxy grows thicker to keep the distance between the gas inlet and substrate surface constant and optimal. Meanwhile the RF power is completely dissipated in the graphite susceptors, keeping the whole growth zone temperature even and making it a true hot wall reactor. An advanced design is used to lead the exhaust gas out when its temperature is above 350 °C. Ammonium-chloride (NH4Cl), a white powder, is formed in the reactor below 350 °C, which would bring growth defects and result into the blockage of the exhaust gas tube.
With this vertical HVPE, at the growth rate of 250 μm/h, 2 mm thick crack-free GaN films are produced with the etch pit density (EPD), while the layer can reach as low as 5 × 105 cm–2[
Using the same reactor, GaN boules with thicknesses of 2.6, 5.8 and 6.3 mm were successful grown by Ritcher et al.[
Figure 4.(Color online) Photograph of a 6.3 mm thick GaN boule grown by Aixtron vertical HVPE.
Kyma Technologies, Inc. have launched HVPE equipment, named Kyma100TM HVPE System[
Figure 5.(Color online) The appearance of (a) the Kyma100TM HVPE System, (b) K200TM HVPE Growth Tool.
In addition to the Kyma100TM HVPE System, Kyma has also developed another HVPE equipment, which is named K200TM HVPE Growth Tool[
There are other vendors can provide the HVPE systems, such as Oxford Instruments, TGO TECH CO.LTD, TRINITRI-Technology LLC and so on.
4. Developing prototype HVPE
4.1. Halogen-free VPE
For general HVPE system, due to the existence of NH3 and GaCl, the long-duration growth of GaN crystal is limited by the accumulation of NH4Cl.
Halogen-free vapor phase epitaxy (HF-VPE) is a similar technique to general HVPE, whose Ga precursor is Ga vapor and is directly vaporized from melted Ga instead of GaCl gas. The reaction in this process is:
The absence of chlorine makes HF-VPE a reasonable approach to avoid NH4Cl ash in the exhaust gas tube in the downstream of the reactor chamber. This technique is able to meet the requirements for prolonging the time of stable growth of GaN crystal.
Although HF-VPE has some limitations, such as low grow rate and high Ga source temperature, in the 2000s several groups tried to use the HF-VPE process to grow GaN[
Figure 6.(Color online) (a) Photograph of fin-shaped porous TaC ceramic component to the Ga evaporator. (b) Schematic drawing of the modified HF-VPE. (c) Photograph of evaporator wetted with molten Ga.
Subsequently, Nakamura et al.[
Lukin et al.[
Figure 7.(Color online) (a) Scheme of the evaporation cell. The arrows stand for three flows in the reactor: A: transport flow for Ga vapor, B: separation flow, C: NH3 with a carrier gas. (b) Numerical simulation of HTVPE reactor temperature distribution.
Compared with the HF-VPE mentioned above, the distance between Ga source and substrate is increased, which reduces the thermal coupling in the two temperature zones and alleviates the problem of thermal field interference. This further results in two temperature zones that can be independently controlled by an induction heating module, which increases the flexibility of temperature control. The simulated temperature distribution for typical growth process is shown in Fig. 7(b), where the gallium temperature is 1340 °C, substrate temperature is 1100 °C. The modeling and simulation are performed by COMSOL Multiphysics software, and the fused silica was simplified as a transparent component in radiation, which is the major heat transport mechanism in the target studied system.
Additionally, a Ga evaporator is covered with a molybdenum cap or pyrolytic boron nitride to reduce the introduction of C impurities. A 15 × 15 mm2 substrate was grown with a growth rate of 165 μm/h, demonstrating the potential of growing thick-film GaN by this modified HF-VPE.
4.2. Tri-halide vapor phase epitaxy (THVPE)
THVPE is an interesting alternative to the conventional HVPE, it uses gallium tri-chloride (GaCl3) as the Ⅲ-precursor, instead of using gallium mono-chloride (GaCl) as the Ⅲ-precursor in conventional HVPE, the precursor GaCl3 can be supplied into the growth zone by two approaches, the first approach is directly evaporation or sublimation from the GaCl3[
The source zone:
The growth zone:
For conventional HVPE, its growth rate is currently up to 1870 μm/h[
Besides thermodynamic analysis on THVPE, many experiment related with GaN epitaxy by THVPE has been completed in recent years[
The experiments conducted by Hisashi Murakami et al.[
From the progress shown above, THVPE has showed a potential for epitaxy low-cost, high-crystalline-quality GaN substrates, which is hopeful to replace conventional manufacturing method of GaCl-based HVPE in the future.
In the other hand, the growth temperature of GaN growth with GaCl3 generally exceeds 1100 °C, up to 1350 °C. Therefore, more stringent requirements are imposed on the heating and thermal insulation system of the equipment. What’s worse, differ from conventional HVPE, in which both HCl and N2 exhaust gas are easily soluble in water, so the exhaust gas treatment is relatively easy, Cl2 gas in THVPE is water-insoluble, so additional treatment method are required to treat Cl2. Accordingly, Tri-halide VPE needs more improvements to meet the industrial growth of GaN substrates.
4.3. Large-scale or multi-wafer HVPE
Large-scale or multi-wafer HVPE is an effective way to mass production of GaN substrate. However, the large size of the reactor chamber requires complex design and narrow operating window to keep the uniform growth of GaN substrates.
Zhang et al.[
First, they added an inner dilution gas (ID) pipe (the section is shown in Fig. 8(a)) between Ⅴ and Ⅲ group concentric gas-flow channel to adjust the GaN film thickness distribution, with a specially designed modified gas intake setup, which they called ID gas periodically modulated growth (ID-PMG) method. In other words, the ID gas flow rate changed periodically to adjust the precursor concentration distribution at the substrate surface, the schematic illustration is shown in Fig. 8(b).
Figure 8.(Color online) Schematic illustration of (a) nozzle structure in ID-HVPE and (b) ID-PMG method.
The modulation effect of ID-PMG method in ID-HVPE are analyzed by numerical simulation, the simulated precursor concentration distribution above wafers surface is shown in Fig. (9a). Eventually, they have successfully made a HVPE reactor that is able to grow three high-uniformity (±3%–4%) 2 inch substrates at a time, which is a huge improvement compared to that of ± 30% grown by the conventional multi-wafer HVPE. The thickness distribution of GaN layer is shown in Fig. 9(b). Besides, the crystal quality and surface morphology were also improved because the ID gas has suppressed the parasitic reaction.
Figure 9.(Color online) Schematic of (a) simulated mole fraction of precursor in ID-HVPE and (b) thickness distribution of GaN substrate along the diameter.
When applying this modification into single 4 inch GaN wafer growth, the thickness inhomogeneity was worsened to 14% again. Consequently, further improvements have been developed based on their work. For example, an extra dilution and push gas (PD) pipe (the structure of the modified HVPE gas nozzle is shown in Fig. 10(a)) has been added in the center of gas channels in the HVPE system to redistribute the distribution of GaCl and NH3 upon the wafer. The effect of new design on precursor concentration distribution on wafer surface has been simulated, as shown in Fig. 10(b). Consequently, by the optimal gas-flow rate, a single 4 inch GaN substrate with outstanding thickness uniformity has been obtained and the experimental results show that the thickness inhomogeneity of 4-inch GaN substrates can be reduced to ±1.8% compared to the ±14% grown with conventional nozzle. This excellent result shows that this technique offers an effective way to research and develop a HVPE reactor to grow large-size uniform GaN substrates.
Figure 10.(Color online) Schematic of (a) new designed nozzle structure in PD-HVPE and (b) simulated mass fraction of precursor in ID-HVPE system and PD-HVPE system on various gas flow rate.
According to the report on the website, recently a 2 × 12 inch HVPE equipment has been introduced by Sino Nitride Semiconductor Co, which has successfully grown 15–25 μm GaN/Al2O3 composite substrates using a multi-wafer HVPE. The thickness uniformity of each wafer was about 10%, and the average thickness variation among 21 wafers was less than 5% in the same run.
Yi et al.[
Figure 11.(Color online) 3D simulation model of five-susceptor, 6 × 4 inch HVPE reactor.
Figure 12.(Color online) Schematic diagram of the HVPE (a) from the vertical cross section view, (b) from the top view.
4.4. In situ removal of foreign substrate
At present, the most common process for making a freestanding GaN substrate is to use a laser to lift off the GaN thick film from foreign substrate after the HVPE growth GaN process. When the GaN thick film cools with a foreign substrate, the wafer is prone to bending and cracking due to the lattice mismatches and thermal mismatches. To solve this problem, various buffer layers or weak bonding layers have been introduced to achieve self-separation of the GaN substrates[
Recently, the in situ removal technology of GaN substrates has been realized by Moon Sang Lee et al.[
Figure 13.(Color online) Schematic diagram of the HVPE reactor and magnified detail of growth/etch zone.
Lee et al.[
Figure 14.(Color online) Photograph of a freestanding GaN substrate by in situ removal Si substrate.
Additionally, according to the researcher, this modified HVPE is a very promising candidate for the production of freestanding 8-inch GaN substrates.
GT Advanced Technologies has also developed HVPE with an in situ laser to lift off the foreign substrate, as published in a presentation made by Raghavan at the LED Forum 2013 in Taipei, China.
5. Conclusion and perspectives
Recently, the increasing demand for high-quality and low-cost GaN substrates has led to various attempts and modifications to be made to develop the HVPE system and corresponding epitaxial GaN processes. Nowadays, GaN substrates can be up to 6 inches in diameter, or even bigger[
This paper describes the principles of HVPE and their different structural designs. It then summarizes the commercial HVPE reactors, and their modifications and innovations. It finally discusses the GaN substrate grown by these reactors.
Even though the GaN substrate grown by HPVE has shown great potential. There are many obstacles needed to be cleared:
First, when the substrates diameter expands from 2 inch to 4 inch or larger, the separation of substrate from foreign substrates become increasing hard, most of them would crack, even if few of them successfully separated from foreign substrates, the wafer would fall into strongly bowed and highly stressed state, which is an issue hard to solve, resulting in the large size GaN substrate unacceptable expensive.
Second, Ammonia chloride (NH4Cl) ash would form in the reactor downstream when the temperature down to 350 °C, the NH4Cl powder bring the blockage problem, which cannot avoid since the existence of NH3 and HCl in reactor chamber. The NH4Cl problem is one of the main factors that hinder the long-duration growth of GaN boule.
The last obstacle is parasitic deposition. the parasitic deposition in the reactor chamber would cost part of precursor, reduce growth rate and yield, what’s worse, the by-product GaN particles which fall down to the wafer surface, bring many defects, such as threading dislocation caused by a combination of parasitic deposition and anisotropy of the growth.
Although so many challenges to solve, the rapidly development on HVPE growth of GaN in recent years are inspiring. We have enough reason to believe that in the near future, high-quality, low-cost large-size freestanding GaN substrates will be realized by a modified HVPE reactor, which is able to grow GaN boule for a long duration or grow multi-GaN wafers in a batch. This would impressively increase the performance of homoepitaxy GaN-based devices and enable them to applied more widely and play a significant role in energy-saving.
Acknowledgments
This work was supported by the National Key Research and Development Plan (No. 2017YFB0404201) and the National Science Foundation of China (Nos. 61774147, 61874108).
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