Hydride vapor phase epitaxy for gallium nitride substrate

Jun Hu; Hongyuan Wei; Shaoyan Yang; Chengming Li; Huijie Li; Xianglin Liu; Lianshan Wang; Zhanguo Wang

doi:10.1088/1674-4926/40/10/101801

Journals >Journal of Semiconductors >Volume 40 >Issue 10 >Page 101801 > Article

Journal of Semiconductors
Vol. 40, Issue 10, 101801 (2019)

Hydride vapor phase epitaxy for gallium nitride substrate

Jun Hu^1、2, Hongyuan Wei^1、2, Shaoyan Yang^1、2, Chengming Li^1、2, Huijie Li^1、2, Xianglin Liu^1、2, Lianshan Wang^1、2, and Zhanguo Wang^1、2

Author Affiliations

¹Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1088/1674-4926/40/10/101801 Cite this Article

Jun Hu, Hongyuan Wei, Shaoyan Yang, Chengming Li, Huijie Li, Xianglin Liu, Lianshan Wang, Zhanguo Wang. Hydride vapor phase epitaxy for gallium nitride substrate[J]. Journal of Semiconductors, 2019, 40(10): 101801 Copy Citation Text

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Abstract

Due to the remarkable growth rate compared to another growth methods for gallium nitride (GaN) growth, hydride vapor phase epitaxy (HVPE) is now the only method for mass product GaN substrates. In this review, commercial HVPE systems and the GaN crystals grown by them are demonstrated. This article also illustrates some innovative attempts to develop homebuilt HVPE systems. Finally, the prospects for the further development of HVPE for GaN crystal growth in the future are also discussed.

${\rm{Ga}\left({\rm{l}} \right) + {\rm{HCl}}\left({\rm{g}} \right) \Leftrightarrow {\rm{GaCl}}\left({\rm{g}}\right) + \frac{1}{2}{{\rm{H}}_2}\left({\rm{g}} \right).} $

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