[1] Y L Guo, Y H Zhang, S J Yuan et al. Chromium sulfide halide monolayers: Intrinsic ferromagnetic semiconductors with large spin polarization and high carrier mobility. Nanoscale, 10, 18036(2018).

[2] S J Zhang, C W Zhang, S F Zhang et al. Intrinsic Dirac half-metal and quantum anomalous Hall phase in a hexagonal metal-oxide lattice. Phys Rev B, 96, 205433(2017).

[3] K S Novoselov, D Jiang, F Schedin et al. Two-dimensional atomic crystals. PNAS, 102, 10451(2005).

[4] M H Zhang, C W Zhang, P J Wang et al. Prediction of high-temperature Chern insulator with half-metallic edge states in asymmetry-functionalized stanene. Nanoscale, 10, 20226(2018).

[5] Y P Wang, W X Ji, C W Zhang et al. Discovery of intrinsic quantum anomalous Hall effect in organic Mn-DCA lattice. Appl Phys Lett, 110, 233107(2017).

[6] S S Li, W X Ji, S J Hu et al. Effect of amidogen functionalization on quantum spin Hall effect in Bi/Sb(111) films. ACS Appl Mater Interfaces, 9, 41443(2017).

[7] K S Novoselov, A K Geim, S V Morozov et al. Electric field effect in atomically thin carbon films. Science, 306, 666(2004).

[8] D Pesin, A H MacDonald. Spintronics and pseudospintronics in graphene and topological insulators. Nat Mater, 11, 409(2012).

[9] J R Schaibley, H Y Yu, G Clark et al. Valleytronics in 2D materials. Nat Rev Mater, 1, 16055(2016).

[10] X Li, T Cao, Q Niu et al. Coupling the valley degree of freedom to antiferromagnetic order. PNAS, 110, 3738(2013).

[11] J J Wang, S Liu, J Wang et al. Valley filter and valve effect by strong electrostatic potentials in graphene. Sci Rep, 7, 10236(2017).

[12] J Zhou, Q Sun, P Jena. Valley-polarized quantum anomalous Hall effect in ferrimagnetic honeycomb lattices. Phys Rev Lett, 119, 046403(2017).

[13] F Zhang, A H MacDonald, E J Mele. Valley Chern numbers and boundary modes in gapped bilayer graphene. PNAS, 110, 10546(2013).

[14] M H Zhang, S F Zhang, P J Wang et al. Emergence of a spin-valley Dirac semimetal in a strained group-VA monolayer. Nanoscale, 12, 3950(2020).

[15] M A U Absor, I Santoso et al. Polarity tuning of spin-orbit-induced spin splitting in two-dimensional transition metal dichalcogenides semiconductors. J Appl Phys, 122, 153905(2017).

[16] X Xu, W Yao, D Xiao et al. Spin and pseudospins in layered transition metal dichalcogenides. Nat Phys, 10, 343(2014).

[17] H L Zeng, J F Dai, W Yao et al. Valley polarization in MoS₂ monolayers by optical pumping. Nat Nanotechnol, 7, 490(2012).

[18] K F Mak, K L McGill, J Park et al. The valley Hall effect in MoS₂ transistors. Science, 344, 1489(2014).

[19] Y D Ma, L Z Kou, A J Du et al. Conduction-band valley spin splitting in single-layer H-Tl₂O. Phys Rev B, 97, 035444(2018).

[20] Z Xu, Q Y Zhang, Q Shen et al. First-principles prediction of Tl/SiC for valleytronics. J Mater Chem C, 5, 10427(2017).

[21] H Q Ai, D Liu, J Z Geng et al. Theoretical evidence of the spin-valley coupling and valley polarization in two-dimensional MoSi₂X₄ (X = N, P, and As). Phys Chem Chem Phys, 23, 3144(2021).

[22] Z M Yu, S Guan, X L Sheng et al. Valley-layer coupling: A new design principle for valleytronics. Phys Rev Lett, 124, 037701(2020).

[23] D Odkhuu. Giant perpendicular magnetic anisotropy of an individual atom on two-dimensional transition metal dichalcogenides. Phys Rev B, 94, 060403(2016).

[24] T Hu, F H Jia, G D Zhao et al. Intrinsic and anisotropic Rashba spin splitting in Janus transition-metal dichalcogenide monolayers. Phys Rev B, 97, 235404(2018).

[25] A Y Lu, H Zhu, J Xiao et al. Janus monolayers of transition metal dichalcogenides. Nat Nanotechnol, 12, 744(2017).

[26] M M Petrić, M Kremser, M Barbone et al. Raman spectrum of Janus transition metal dichalcogenide monolayers WSSe and MoSSe. Phys Rev B, 103, 035414(2021).

[27] C Long, Y Dai, Z R Gong et al. Robust type-II band alignment in Janus-MoSSe bilayer with extremely long carrier lifetime induced by the intrinsic electric field. Phys Rev B, 99, 115316(2019).

[28] Y J Ji, M Y Yang, H P Lin et al. Janus structures of transition metal dichalcogenides as the heterojunction photocatalysts for water splitting. J Phys Chem C, 122, 3123(2018).

[29] Z Y Guan, S Ni, S L Hu. Tunable electronic and optical properties of monolayer and multilayer Janus MoSSe as a photocatalyst for solar water splitting: A first-principles study. J Phys Chem C, 122, 6209(2018).

[30] L Dong, J Lou, V B Shenoy. Large in-plane and vertical piezoelectricity in Janus transition metal dichalchogenides. ACS Nano, 11, 8242(2017).

[31] F Zhang, W B Mi, X C Wang. Spin-dependent electronic structure and magnetic anisotropy of 2D ferromagnetic Janus Cr₂I₃X₃ (X = Br, Cl) monolayers. Adv Electron Mater, 6, 1900778(2020).

[32] R Li, J W Jiang, X H Shi et al. Two-dimensional Janus FeXY (X, Y = Cl, Br, and I, X ≠ Y) monolayers: Half-metallic ferromagnets with tunable magnetic properties under strain. ACS Appl Mater Interfaces, 13, 38897(2021).

[33] R Li, J W Jiang, W B Mi et al. Room temperature spontaneous valley polarization in two-dimensional FeClBr monolayer. Nanoscale, 13, 14807(2021).

[34] Q F Yao, J Cai, W Y Tong et al. Manipulation of the large Rashba spin splitting in polar two-dimensional transition-metal dichalcogenides. Phys Rev B, 95, 165401(2017).

[35] R Peng, Y D Ma, S Zhang et al. Valley polarization in Janus single-layer MoSSe via magnetic doping. J Phys Chem Lett, 9, 3612(2018).

[36] Z P Zhang, J J Niu, P F Yang et al. Van der waals epitaxial growth of 2D metallic vanadium diselenide single crystals and their extra-high electrical conductivity. Adv Mater, 29, 1702359(2017).

[37] R P Li, Y C Cheng, W Huang. Recent progress of Janus 2D transition metal chalcogenides: From theory to experiments. Small, 14, 1802091(2018).

[38] J Zhang, S Jia, I Kholmanov et al. Janus monolayer transition-metal dichalcogenides. ACS Nano, 11, 8192(2017).

[39] G B Liu, W Y Shan, Y G Yao et al. Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides. Phys Rev B, 88, 085433(2013).

[40] G B Liu, D Xiao, Y G Yao et al. Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides. Chem Soc Rev, 44, 2643(2015).

[41] Y Y Wang, W Wei, H Wang et al. Janus TiXY monolayers with tunable Berry curvature. J Phys Chem Lett, 10, 7426(2019).

[42] G Kresse, J Furthmüller. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys Rev B, 54, 11169(1996).

[43] J P Perdew, K Burke, M Ernzerhof. Perdew, burke, and ernzerhof reply. Phys Rev Lett, 80, 891(1998).

[44] J P Perdew, K Burke, M Ernzerhof. Generalized gradient approximation made simple. Phys Rev Lett, 77, 3865(1996).

[45] G Kresse, D Joubert. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys Rev B, 59, 1758(1999).

[46] C E Calderon, J J Plata, C Toher et al. The AFLOW standard for high-throughput materials science calculations. Comput Mater Sci, 108, 233(2015).

[47] X Gonze, C Lee. Dynamical matrices, Born effective charges, dielectric permittivity tensors, and interatomic force constants from density-functional perturbation theory. Phys Rev B, 55, 10355(1997).

[48] A Togo, I Tanaka. First principles phonon calculations in materials science. Scr Mater, 108, 1(2015).

[49] D Bucher, L C T Pierce, J A McCammon et al. On the use of accelerated molecular dynamics to enhance configurational sampling in ab initio simulations. J Chem Theory Comput, 7, 890(2011).

[50] A A Mostofi, J R Yates, Y S Lee et al. Wannier90: A tool for obtaining maximally-localised Wannier functions. Comput Phys Commun, 178, 685(2008).

[51] I Smaili, S Laref, J H Garcia et al. Janus monolayers of magnetic transition metal dichalcogenides as an all-in-one platform for spin-orbit torque. Phys Rev B, 104, 104415(2021).

[52] Y Ding, G F Yang, Y Gu et al. First-principles predictions of Janus MoSSe and WSSe for FET applications. J Phys Chem C, 124, 21197(2020).

[53] J J Chen, K Wu, W Hu et al. Spin-orbit coupling in 2D semiconductors: A theoretical perspective. J Phys Chem Lett, 12, 12256(2021).

[54] S V Eremeev, I A Nechaev, Y M Koroteev et al. Ideal two-dimensional electron systems with a giant Rashba-type spin splitting in real materials: Surfaces of bismuth tellurohalides. Phys Rev Lett, 108, 246802(2012).

[55] W Z Zhou, J Y Chen, Z X Yang et al. Geometry and electronic structure of monolayer, bilayer, and multilayer Janus WSSe. Phys Rev B, 99, 075160(2019).

[56] H Jin, T Wang, Z R Gong et al. Prediction of an extremely long exciton lifetime in a Janus-MoSTe monolayer. Nanoscale, 10, 19310(2018).

[57] C Cheng, J T Sun, X R Chen et al. Nonlinear Rashba spin splitting in transition metal dichalcogenide monolayers. Nanoscale, 8, 17854(2016).

[58] Q Y Zhang, U Schwingenschlögl. Rashba effect and enriched spin-valley coupling in GaX/MX₂ (M = Mo, W; X = S, Se, Te) heterostructures. Phys Rev B, 97, 155415(2018).

[59] Y C Cheng, Z Y Zhu, M Tahir et al. Spin-orbit–induced spin splittings in polar transition metal dichalcogenide monolayers. EPL, 102, 57001(2013).

[60] Q H Liu, Y Z Guo, A J Freeman. Tunable Rashba effect in two-dimensional LaOBiS₂ films: Ultrathin candidates for spin field effect transistors. Nano Lett, 13, 5264(2013).

[61] D X Zhang, B Z Zhou. Controllable spin direction in nonmagnetic BX/MX₂ (M = Mo or W; X = S, Se and Te) van der Waals heterostructures by switching between the Rashba splitting and valley polarization. J Mater Chem C, 10, 312(2022).

[62] A Kormányos, V Zólyomi, N D Drummond et al. Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides. Phys Rev X, 4, 011034(2014).

[63] K F Mak, K He, J Shan et al. Control of valley polarization in monolayer MoS₂ by optical helicity. Nat Nanotechnol, 7, 494(2012).

[64] Q Y Zhang, S A Yang, W B Mi et al. Large spin-valley polarization in monolayer MoTe₂ on top of EuO(111). Adv Mater, 28, 959(2016).

[65] C Zhao, T Norden, P Zhang et al. Enhanced valley splitting in monolayer WSe₂ due to magnetic exchange field. Nat Nanotechnol, 12, 757(2017).

[66] K L Seyler, D Zhong, B Huang et al. Valley manipulation by optically tuning the magnetic proximity effect in WSe₂/CrI₃ heterostructures. Nano Lett, 18, 3823(2018).

[67] J Zhou, P Jena. Giant valley splitting and valley polarized plasmonics in group V transition-metal dichalcogenide monolayers. J Phys Chem Lett, 8, 5764(2017).

[68] N Singh, U Schwingenschlögl. A route to permanent valley polarization in monolayer MoS₂. Adv Mater, 29, 1600970(2017).

[69] X F Chen, L S Zhong, X Li et al. Valley splitting in the transition-metal dichalcogenide monolayer via atom adsorption. Nanoscale, 9, 2188(2017).

[70] X L Xu, Y D Ma, T Zhang et al. Nonmetal-atom-doping-induced valley polarization in single-layer Tl₂O. J Phys Chem Lett, 10, 4535(2019).

[71] S Poncé, E R Margine, F Giustino. Towards predictive many-body calculations of phonon-limited carrier mobilities in semiconductors. Phys Rev B, 97, 121201(2018).

[72] X O Zhang, W Y Shan, D Xiao. Optical selection rule of excitons in gapped chiral fermion systems. Phys Rev Lett, 120, 077401(2018).

[73] L Xie, X D Cui. Manipulating spin-polarized photocurrents in 2D transition metal dichalcogenides. PNAS, 113, 3746(2016).

[74] D Xiao, G B Liu, W X Feng et al. Coupled spin and valley physics in monolayers of MoS₂ and other group-VI dichalcogenides. Phys Rev Lett, 108, 196802(2012).

[75] B R Zhu, H L Zeng, J F Dai et al. Anomalously robust valley polarization and valley coherence in bilayer WS₂. PNAS, 111, 11606(2014).

[76] A Kormányos, V Zólyomi, V I Fal'ko et al. Tunable Berry curvature and valley and spin Hall effect in bilayer MoS₂. Phys Rev B, 98, 035408(2018).

[77] J Son, K H Kim, Y H Ahn et al. Strain engineering of the berry curvature dipole and valley magnetization in monolayer MoS₂. Phys Rev Lett, 123, 036806(2019).

[78] A Kormányos, V Zólyomi, N D Drummond et al. Monolayer MoS₂: Trigonal warping, the Γ valley, and spin-orbit coupling effects. Phys Rev B, 88, 045416(2013).

[79] C S Xu, J S Feng, S Prokhorenko et al. Topological spin texture in Janus monolayers of the chromium trihalides Cr(I, X)₃. Phys Rev B, 101, 060404(2020).

[80] J H Liang, W W Wang, H F Du et al. Very large Dzyaloshinskii-Moriya interaction in two-dimensional Janus manganese dichalcogenides and its application to realize skyrmion states. Phys Rev B, 101, 184401(2020).

[81] X D Duan, C Wang, Z Fan et al. Synthesis of WS_2xSe_2–2x alloy nanosheets with composition-tunable electronic properties. Nano Lett, 16, 264(2016).

[82] S D Karande, N Kaushik, D S Narang et al. Thickness tunable transport in alloyed WSSe field effect transistors. Appl Phys Lett, 109, 142101(2016).