• Journal of Semiconductors
  • Vol. 43, Issue 4, 042501 (2022)
Wenrong Liu, Xinyang Li, Changwen Zhang, and Shishen Yan
Author Affiliations
  • School of Physics and Technology, Spintronics Institute, University of Jinan, Jinan 250022, China
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    DOI: 10.1088/1674-4926/43/4/042501 Cite this Article
    Wenrong Liu, Xinyang Li, Changwen Zhang, Shishen Yan. Janus VXY monolayers with tunable large Berry curvature[J]. Journal of Semiconductors, 2022, 43(4): 042501 Copy Citation Text show less
    (Color online) (a, b) Top and side views of SL VXY. The illustrations in (a) indicate VXY trigonal prismatic geometry. (c) The 2D Brillouin zone of VXY.
    Fig. 1. (Color online) (a, b) Top and side views of SL VXY. The illustrations in (a) indicate VXY trigonal prismatic geometry. (c) The 2D Brillouin zone of VXY.
    (Color online) (a) Calculated electronic band structures of the VBrSe monolayer without and with SOC. (b) The projected band structures of the VbrSe monolayer without and with SOC, respectively.
    Fig. 2. (Color online) (a) Calculated electronic band structures of the VBrSe monolayer without and with SOC. (b) The projected band structures of the VbrSe monolayer without and with SOC, respectively.
    (Color online) (a, b) In-plane spin-polarization components of two bands around Γ. (c) Magnified view of the band structure around Γ. (d) Spin texture of Janus VBrSe.
    Fig. 3. (Color online) (a, b) In-plane spin-polarization components of two bands around Γ. (c) Magnified view of the band structure around Γ. (d) Spin texture of Janus VBrSe.
    (Color online) Comparison of Rashba parameters of VXY structure with MoSSe, MoSTe and WSSe.
    Fig. 4. (Color online) Comparison of Rashba parameters of VXY structure with MoSSe, MoSTe and WSSe.
    (Color online) (a) Valley and spin coupling in VXY optical selection rules. Discrete valleys coupled to different circular helicities (σ+, σ−) with transition frequencies (ωu, ωd). (b) Photoinduced valley Hall effect when circularly polarized light incident on it, in which the charge Hall current is spin and valley polarized. (c) Spin and valley Hall effects under linearly polarized optical field. (d) Valley polarization with opposite circular polarization having a frequency ωu and ωd.
    Fig. 5. (Color online) (a) Valley and spin coupling in VXY optical selection rules. Discrete valleys coupled to different circular helicities (σ+, σ) with transition frequencies (ωu, ωd). (b) Photoinduced valley Hall effect when circularly polarized light incident on it, in which the charge Hall current is spin and valley polarized. (c) Spin and valley Hall effects under linearly polarized optical field. (d) Valley polarization with opposite circular polarization having a frequency ωu and ωd.
    (Color online) Berry curvature of Janus VBrSe (a) in the full Brillouin zone and (c) along high-symmetry points. (b) Berry curvature value of VXY. (d) Diagrammatic sketch of valley Hall effects and rapid carrier transfer in Janus VBrSe.
    Fig. 6. (Color online) Berry curvature of Janus VBrSe (a) in the full Brillouin zone and (c) along high-symmetry points. (b) Berry curvature value of VXY. (d) Diagrammatic sketch of valley Hall effects and rapid carrier transfer in Janus VBrSe.
    (Color online) (a) Changes in Berry curvature of VBrSe with external strain. (b) The relevance between strain and the value of berry curvature.
    Fig. 7. (Color online) (a) Changes in Berry curvature of VBrSe with external strain. (b) The relevance between strain and the value of berry curvature.
    Typea, b (Å) l1, l2 (Å) (°) (eV) ( ) ( )
    VClSe3.2552.479, 2.44740.7, 39.80.03, 0.87–2.150.0000.000
    VClTe3.3972.676, 2.47642.9, 37.60.20, 5.24–2.360.0000.000
    VBrSe3.3532.498, 2.58139.2, 41.40.08, 2.20–1.640.0000.000
    VBrTe3.4852.689, 2.60441.6, 39.40.09, 2.16–1.670.0000.000
    VISe3.5132.537, 2.75336.9, 42.60.22, 5.63–3.360.0000.000
    VITe3.6182.716, 2.76239.8, 40.90.02, 1.11–3.520.0000.000
    Table 1. The structural parameters, band gaps, total magnetic moments ( ) and local magnetic moments ( ) of VXY monolayers are calculated. The lattice constant ( = b), bond length of V–X(l1) and V–Y(l2) are presented. In each VXY system, the atomic number of Y is greater than that of X, so that l1 < l2.
    TypeΔC (meV) ΔV (meV) (eV) /SOC (eV) (meV) –1) (meV·Å)
    VClSe0.093110.8710.8208.010.17691.01
    VClTe0.135180.7340.65410.020.168119.26
    VBrSe0.111140.7580.69415.040.170176.89
    VBrTe0.150180.6460.5588.980.141127.39
    VISe0.132150.6140.54028.040.144389.43
    VITe0.166170.5320.43867.930.192707.60
    Table 2. Band structure analysis of VXY. ΔC and ΔV are the magnitude of the energy band split between the conduction band and the valence band at point K. Eg is the band gap at K point. and Kr are the splitting of the energy and wave vector. is the Rashba parameter.
    Wenrong Liu, Xinyang Li, Changwen Zhang, Shishen Yan. Janus VXY monolayers with tunable large Berry curvature[J]. Journal of Semiconductors, 2022, 43(4): 042501
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