Hailong Wang, Jialin Ma, Qiqi Wei, Jianhua Zhao. Mn doping effects on the gate-tunable transport properties of Cd3As2 films epitaxied on GaAs[J]. Journal of Semiconductors, 2020, 41(7): 072903
- Journal of Semiconductors
- Vol. 41, Issue 7, 072903 (2020)
Fig. 1. (Color online) (a) Layer structure, (b) RHEED pattern, and (c) XRD curves of Cd3As2 films with various Mn doping concentration. (d) The enlarged XRD curves of (c) around the Cd3As2 (112) diffraction peak.
Fig. 2. (Color online) (a) Field effect device diagram, (b) Temperature dependence, and (c, d) Magnetic field dependence of Mn-doped Cd3As2 films. The inset of (b) shows the fitting line based on Arrhenius equation, in which the blue curve is offset for clarity.
Fig. 3. (Color online) Hall resistance as a function of magnetic field in Mn-doped Cd3As2 films at (a) 300 K and (b) 2 K. The unit of (b) is h /e 2 (or ~2 5812.8 Ω).
Fig. 4. (Color online) Magnetic field dependence of (a) longitudinal and (b) transverse resistances for a 0.5% Mn-doped Cd3As2 film at 2 K.
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