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2022
Volume: 41 Issue 4
16 Article(s)
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Research Articles
Photoelectrochemical properties of sputtered n-type CdTe thin films
Meng CAO, Bin YU, Xiang ZHANG, Cheng-Gang XU, Shan ZHANG, Li-Ying SUN, Xiao-Hong TAN, Yu-Cheng JIANG, Jia-Wei DOU, and Lin-Jun WANG
In this paper, n-type CdTe thin films were prepared by sputtering method. The morphology, structure and optical properties of n-type CdTe thin films deposited with different time and the influence of film thickness and annealing process on the photoelectrochemical (PEC) characteristics of n-type CdTe thin films were stIn this paper, n-type CdTe thin films were prepared by sputtering method. The morphology, structure and optical properties of n-type CdTe thin films deposited with different time and the influence of film thickness and annealing process on the photoelectrochemical (PEC) characteristics of n-type CdTe thin films were studied. The experimental results demonstrated that CdTe thin films with sputtering time of 25 min had better PEC performance. Annealing process could enhance the PEC properties of deposited n-type CdTe thin films. When CdTe thin films were coated with saturated CdCl2 solution and annealed in vacuum at 400 °C, the photocurrents of n-type CdTe thin films achieved 301 μA/cm2..
Journal of Infrared and Millimeter Waves
- Publication Date: Aug. 25, 2022
- Vol. 41, Issue 4, 659 (2022)
Lateral linear mode avalanche photodiode through 0.35 μm high voltage CMOS process
Guo-Hao JU, Zheng-Xi CHENG, and Yong-Ping CHEN
This letter reports on a lateral linear mode avalanche photodiode through 0.35 μm high voltage CMOS process. The linear mode avalanche photodiode is designed and fabricated with the lateral separate absorption, charge and multiplication (SACM) structure using an epitaxial wafer. The DNTUB layer, DPTUB layer, Pi layer aThis letter reports on a lateral linear mode avalanche photodiode through 0.35 μm high voltage CMOS process. The linear mode avalanche photodiode is designed and fabricated with the lateral separate absorption, charge and multiplication (SACM) structure using an epitaxial wafer. The DNTUB layer, DPTUB layer, Pi layer and SPTUB layer are used for the lateral SACM structure. This improves freedom of the design and fabrication for monolithic integrated avalanche photodiode without high voltage CMOS process modifications. The breakdown voltage for the lateral linear mode avalanche photodiode is about 114.7 V. The dark currents at gain M = 10 and M = 50 are about 15 nA and 66 nA, respectively. The effective responsive wavelength range is 450 ~ 1050 nm. And the peak responsive wavelength is about 775 nm at 20 V while M = 1. With unity gain (M = 1), the responsivity at 532 nm is about half of the maximum..
Journal of Infrared and Millimeter Waves
- Publication Date: Aug. 25, 2022
- Vol. 41, Issue 4, 668 (2022)
High temperature performance of long-wave p-on-n HgCdTe infrared focal plane detector
Bo-Jun XIONG, Lei ZOU, Chao-Wei YANG, Qiang QIN, Jin-Cheng KONG, and Li-Hua LI
The HgCdTe is a narrow band gap semiconductor. As the operating temperature increases, the intrinsic carrier concentration of the material will increase, the detector cut-off wavelength will become shorter, and the dark current will increase, which will cause the performance of the detector to decrease. HgCdTe infraredThe HgCdTe is a narrow band gap semiconductor. As the operating temperature increases, the intrinsic carrier concentration of the material will increase, the detector cut-off wavelength will become shorter, and the dark current will increase, which will cause the performance of the detector to decrease. HgCdTe infrared detectors usually work near 77 K temperature and obtain good detection performance, but low temperature operation will increase the preparation cost, power consumption, volume and weight of the detector. In order to solve these problems, under the premise of ensuring the normal working performance of the detector, increasing the operating temperature of the detector is an important research direction of the HgCdTe infrared detector. The p-on-n structure HgCdTe infrared focal plane detectors has the characteristics of low dark current and long minority carrier life, which is conducive to obtaining better detector performance under high operating temperature conditions. The performance of the p-on-n long-wave focal plane detectors is tested and analyzed at different operating temperatures. At 110 K, the noise equivalent temperature difference (NETD) of the p-on-n long-wave HgCdTe infrared focal plane detectors is 25.3 mK, and the operability is 99.48%, have better working performance under high temperature conditions..
Journal of Infrared and Millimeter Waves
- Publication Date: Aug. 25, 2022
- Vol. 41, Issue 4, 672 (2022)
Characteristics of Ti transition-edge sensor based superconducting single-photon detectors
Yue GENG, Jia-Qiang ZHONG, Pei-Zhan LI, Wen ZHANG, Zheng WANG, Kang-Min ZHOU, Yuan REN, Wei MIAO, Qi-Jun YAO, and Sheng-Cai SHI
Ti TES-based superconducting single-photon detectors with different dimensions between 5 μm×5 μm and 20 μm×20 μm were developed. The measured system detection efficiency (ηsys) is 72% at 1550 nm, and energy resolution (ΔE) is 0.26 eV by integrating an optical cavity during the TES fabrication. Based on the twTi TES-based superconducting single-photon detectors with different dimensions between 5 μm×5 μm and 20 μm×20 μm were developed. The measured system detection efficiency (ηsys) is 72% at 1550 nm, and energy resolution (ΔE) is 0.26 eV by integrating an optical cavity during the TES fabrication. Based on the two-fluid model, we extract the key parameters (i.e., temperature sensitivity, current sensitivity, heat capacity, et. al) of Ti TES-based superconducting single-photon detectors with different dimensions, and calculate the effective response time and ΔE, which are consistent with the measured ones. The obtained results show that it's possible to realize high ηsys and ΔE by optimizing TES dimension and critical temperature, paving the way for high performance single-photon detectors at telecommunication band..
Journal of Infrared and Millimeter Waves
- Publication Date: Aug. 25, 2022
- Vol. 41, Issue 4, 678 (2022)
High power 793 nm diode lasers
Kun ZHOU, Lin-An HE, Yi LI, Yu-Wen HE, Liang ZHANG, Yao HU, Sheng-Zhe LIU, Xin YANG, Wei-Chuan DU, Song-Xin GAO, and Chun TANG
To satisfy the need of Thulium-doped fiber laser pump source, 793 nm high-power semiconductor laser emitters and fiber-coupled module were developed. The laser epitaxy adopts the large asymmetric optical cavity waveguide structure to reduce the mode loss. The waveguide adopts aluminum free GaInP material which improvesTo satisfy the need of Thulium-doped fiber laser pump source, 793 nm high-power semiconductor laser emitters and fiber-coupled module were developed. The laser epitaxy adopts the large asymmetric optical cavity waveguide structure to reduce the mode loss. The waveguide adopts aluminum free GaInP material which improves the facet damaged threshold combined with vacuum cleavage passivation process. Through the optimization of epitaxial structure and facet coating, the output power of the developed laser reaches 12 W@11A, passed the 300 h aging test of 8 W. Seven single emitters were space coupled to 100 μ m 0.22 NA fiber modules. The output power of the model is 40 W@7A, and the electro-optical efficiency is 49.5% @ 40 W..
Journal of Infrared and Millimeter Waves
- Publication Date: Aug. 25, 2022
- Vol. 41, Issue 4, 685 (2022)
Research on millimeter-wave ridged half-mode waveguide filter based on periodic defected ground structure
Qi-Hui ZHOU, and Chen-Xi LIU
A monolithic ridged half-mode waveguide bandpass filter with a periodic defected ground array has been successfully fabricated. Utilizing the high-pass characteristic of the waveguide and the rejection band generated by the periodic defected ground structure, an effective passband was created. The measured results showA monolithic ridged half-mode waveguide bandpass filter with a periodic defected ground array has been successfully fabricated. Utilizing the high-pass characteristic of the waveguide and the rejection band generated by the periodic defected ground structure, an effective passband was created. The measured results show a 3 dB passband from 39.4 to 45.4 GHz, centered at 42.4 GHz with a 3-dB fractional bandwidth of 14.1%. The lowest insertion loss of 2.4 dB locates at 44.2 GHz. The suppression in upper rejection band reaches 40 dB at 58 GHz. Compared to conventional rectangular waveguide filters, the width of the proposed filter is reduced by 64%, which benefits to the integration and miniaturization. With the development of the next generation wireless communication (5G) towards millimeter-wave band, the miniaturized millimeter-wave filter has promising potential for 5G communication..
Journal of Infrared and Millimeter Waves
- Publication Date: Aug. 25, 2022
- Vol. 41, Issue 4, 690 (2022)
Highly sensitive graphene terahertz detection driven by two-dimensional ferroelectrics
Xue-Yan WANG, Yi-Wen ZHANG, Lin WANG, and Xiao-Shuang CHEN
Graphene has the excellent characteristics of low defect density, easy large-area transfer and high carrier mobility. However, the zero-bandgap band structure of graphene leads to a short lifetime of photogenerated carriers, which restricts its application in highly sensitive photodetectors. In this work, ferroelectricGraphene has the excellent characteristics of low defect density, easy large-area transfer and high carrier mobility. However, the zero-bandgap band structure of graphene leads to a short lifetime of photogenerated carriers, which restricts its application in highly sensitive photodetectors. In this work, ferroelectric material CuInP2S6(CIPS) was used as the top gate to control the photoelectric characteristics of graphene, and the possibility of improving the sensitivity of graphene terahertz detector was explored. The detection mechanism of graphene photothermoelectric effect and plasma wave effect under ferroelectric control was studied, and a high-performance graphene detector was obtained. At 0.12 THz, the responsivity of detector at room temperature reaches 0.5 A/W, with the response time of 1.67 μs and the noise equivalent power(NEP) of 0.81 nW/Hz1/2 under a bias voltage of 40 mV and a gate voltage of 2.12 V. At 0.29 THz, the responsivity is determined to be 0.12 A/W, and a NEP is 1.78 nW/Hz1/2. This work demonstrates the great potential of two-dimensional ferroelectric heterostucture at THz band..
Journal of Infrared and Millimeter Waves
- Publication Date: Aug. 25, 2022
- Vol. 41, Issue 4, 696 (2022)
The effect of electron beam misalignment on confocal waveguide gyrotron traveling wave tube
Jie YANG, Shou-Xi XU, Yong WANG, and Xiao-Yan WANG
In this paper, the effect of misaligned electron beam on the beam-wave interaction has been studied for a 0.22 THz confocal waveguide gyrotron traveling wave tube (gyro-TWT) with linear and nonlinear theory. The effect of electron beam misalignment on linear gain, critical current of absolutely instability and the exciIn this paper, the effect of misaligned electron beam on the beam-wave interaction has been studied for a 0.22 THz confocal waveguide gyrotron traveling wave tube (gyro-TWT) with linear and nonlinear theory. The effect of electron beam misalignment on linear gain, critical current of absolutely instability and the exciting situation of backward wave oscillation is investigated by dispersion equation. A self-consistent nonlinear theory for confocal gyro-TWT is introduced to analyze the influence of electron beam misalignment on output power and beam-wave interaction efficiency. Meanwhile, the velocity spread is also taken into account to investigate the effect of electron beam quality on the confocal waveguide beam-wave interaction. The results show that the electron beam misalignments can cause efficiency degradation..
Journal of Infrared and Millimeter Waves
- Publication Date: Aug. 25, 2022
- Vol. 41, Issue 4, 702 (2022)
Terahertz photodetector based on two-dimensional tellurene
Wen-Chao HUANG, Kai-Xuan ZHANG, Yun-Xia LI, and Lin WANG
A metal-tellurene-metal terahertz photodetector, and realized optical detection under millimeter wave-terahertz wave are fabricated. The results show that the terahertz photodetector based on logarithmic antenna tellurene has a high optical responsivity (40 mA/W, 0.12 THz) under zero bias, a response time of 8 μs, and A metal-tellurene-metal terahertz photodetector, and realized optical detection under millimeter wave-terahertz wave are fabricated. The results show that the terahertz photodetector based on logarithmic antenna tellurene has a high optical responsivity (40 mA/W, 0.12 THz) under zero bias, a response time of 8 μs, and a noise equivalent power (NEP) of 4 pW·Hz-0.5. This research results provide a new development path for high-performance room temperature terahertz optical detection..
Journal of Infrared and Millimeter Waves
- Publication Date: Aug. 25, 2022
- Vol. 41, Issue 4, 721 (2022)
Influence of InyAl1-yAs graded buffer layer on properties of InP-HEMT materials
Fang-Kun TIAN, Li-Kun AI, Guo-Yu SUN, An-Huai XU, Hua HUANG, Qian GONG, and Ming QI
This paper reports the material characteristics of In0.66Ga0.34As/InyAl1-yAs high electron mobility transistor (HEMT). The linearly graded InyAl1-yAs buffer layer was grown on InP substrates by gas source molecular beam epitaxy (GSMBE). The influence of InyAl1-yAs graded buffer layer with different thickness and differThis paper reports the material characteristics of In0.66Ga0.34As/InyAl1-yAs high electron mobility transistor (HEMT). The linearly graded InyAl1-yAs buffer layer was grown on InP substrates by gas source molecular beam epitaxy (GSMBE). The influence of InyAl1-yAs graded buffer layer with different thickness and different indium contents on the surface quality, the electron mobility and the concentrations of two-dimensional electron gas (2DEG) was studied. It was found that the electron mobility and concentration at 300 K (77 K) were 8570 cm2/(Vs)-1 (23200 cm2/(Vs)-1) and 3.255×1012 cm-2 (2.732×1012 cm-2). The surface morphology of the material was also well improved and the root mean square (RMS) was 0.154 nm when the InAlAs graded buffer layer thickness was 50 nm. And this study can provide strong support for the improvement of HEMT performance..
Journal of Infrared and Millimeter Waves
- Publication Date: Aug. 25, 2022
- Vol. 41, Issue 4, 726 (2022)
High efficiency 285 GHz tripler based on face-to-face differential configuration
Yao-ling TIAN, Ge LIU, Li LI, Yue HE, Kun HUANG, Jun JIANG, and Jian ZHANG
A high efficiency 285 GHz Schottky diode tripler has been demonstrated based on the face-to-face differential configuration. The proposed concept could improve the power handling capability by a factor of two compared to the traditional balanced circuit based on on-chip capacitors. Meanwhile, the tripler could provide A high efficiency 285 GHz Schottky diode tripler has been demonstrated based on the face-to-face differential configuration. The proposed concept could improve the power handling capability by a factor of two compared to the traditional balanced circuit based on on-chip capacitors. Meanwhile, the tripler could provide improved DC bias networks with perfect amplitude and phase balance, which shows lower insert losses by leaving out the high required on-chip bypass capacitor. The proposed triple frequency multiplier features inherent suppression on even-order harmonics with the face-to-face differential topology, which ensures better conversion efficiency with doubled anodes. The fabricated tripler has been proved to exhibit a 12% peak efficiency for a nominal driven power of 140~210 mW..
Journal of Infrared and Millimeter Waves
- Publication Date: Aug. 25, 2022
- Vol. 41, Issue 4, 739 (2022)
Influence of inductance of photo-conductive terahertz source circuit on its radiation characteristics
Ting SHANG, Zhi JIN, Chun-Hui LI, and Wei SHI
Photo-conductive terahertz source (PCA) has been widely used in the terahertz time-domain spectral system (THz-TDS). In the THz-TDS system, the biased PCA is triggered by a femtosecond laser to radiate terahertz waves to free space due to the accelerated motion of photogenerated carriers under the bias electric field, Photo-conductive terahertz source (PCA) has been widely used in the terahertz time-domain spectral system (THz-TDS). In the THz-TDS system, the biased PCA is triggered by a femtosecond laser to radiate terahertz waves to free space due to the accelerated motion of photogenerated carriers under the bias electric field, and a pulse current is formed in the PCA bias loop. Generally, the circuit that loads bias voltage to PCA has different circuit designs, so there is inevitably a specific inductance in the base circuit of PCA mounting. The electromagnetic inertia caused by this will significantly affect the pulse width of the current in the circuit. The pulse width of the current pulse will be widened with the increase of the circuit inductance. Therefore, whether the inductance of The PCA circuit will affect the character of the THz wave radiated from PCA to free space is a problem faced by the circuit design based on PCA. In this paper, inductance elements with different inductance values are added to the PCA circuit, and the time domain waveform and spectrum of THz wave radiated by PCA are tested experimentally. The results show that the inductance value in the PCA circuit has no noticeable effect on the THz wave released by PCA, thus providing an experimental basis for t designing the THz PCA substrate circuit applied to different occasions..
Journal of Infrared and Millimeter Waves
- Publication Date: Aug. 25, 2022
- Vol. 41, Issue 4, 751 (2022)
Complex structure feature enhancement algorithm for high resolution SAR imaging
Bo HUANG, Jie ZHOU, Ge JIANG, and Hai ZHANG
A complex structure feature enhancement (CEA) algorithm was proposed, and in which the complex structure is represented by high-order total direction variation (HOTDV) regular operator, and the sparse feature of SAR imaging targets is represented by 𝓁1 regular operator. The algorithm uses Alternating Direction A complex structure feature enhancement (CEA) algorithm was proposed, and in which the complex structure is represented by high-order total direction variation (HOTDV) regular operator, and the sparse feature of SAR imaging targets is represented by
Journal of Infrared and Millimeter Waves
- Publication Date: Aug. 25, 2022
- Vol. 41, Issue 4, 762 (2022)
Information analysis of aerosol and surface parameters in PSAC observation over land
Yi-Zhe FAN, Xiao-Bing SUN, Ru-Fang TI, Hong-Lian HUANG, and Xiao LIU
In order to meet the aerosol retrieval application requirements of polarized scanning atmospheric corrector (PSAC) over land, the information content and a posterior error analysis is applied to the synthetic data in this paper, which inherits from the optimal estimate theoretical framework. We discussed the angle depeIn order to meet the aerosol retrieval application requirements of polarized scanning atmospheric corrector (PSAC) over land, the information content and a posterior error analysis is applied to the synthetic data in this paper, which inherits from the optimal estimate theoretical framework. We discussed the angle dependence of the degrees of freedom for signal (DFS) of the aerosol and surface parameters in different scenarios, and analyzed the posterior errors of the aerosol and surface parameters. On this basis, the variation trend of the aerosol and surface parameters DFS with aerosol optical depth (AOD) and surface reflectivity is analyzed. The results show that: 1) Under different observation geometry, the total DFS of aerosol parameters vary greatly, and the optimal scattering angle range of aerosol parameters is
Journal of Infrared and Millimeter Waves
- Publication Date: Aug. 25, 2022
- Vol. 41, Issue 4, 770 (2022)
A 48 mW DROIC with 15-bit pixel-level ADC for 640×512 mid-wave infrared imagers
Shan-Zhe YU, Ya-Cong ZHANG, Yu-Ze NIU, Ye ZHOU, Yi ZHUO, Ding MA, Wen-Gao LU, Zhong-Jian CHEN, and Xiang-Yang LI
A low-power digital readout integrated circuit (DROIC) with 15-bit pixel-level single-slope analog-to-digital converter (ADC) for mid-wave infrared imagers is proposed. A novel pulse comparator featured power-self-adaption is presented for the pixel-level ADC to reduce power consumption. Only when the ramp signal approA low-power digital readout integrated circuit (DROIC) with 15-bit pixel-level single-slope analog-to-digital converter (ADC) for mid-wave infrared imagers is proposed. A novel pulse comparator featured power-self-adaption is presented for the pixel-level ADC to reduce power consumption. Only when the ramp signal approaches the integration voltage, there is current flowing through the comparator. Furthermore, the pulse output of the comparator also reduces dynamic power consumed by the 15-bit pixel conversion result memories. For achieving the requirement of 15 μm pixel pitch, the memories adopt a 3-transistor dynamic structure and only occupy about 54 μm2. The current mode transmission is used to read out the analog-to-digital conversion results to column for robustness against voltage crosstalk between adjacent column bus lines. The 640×512 DROIC with this structure is fabricated in 0.18 μm CMOS process. The experimental results demonstrate the DROIC consumes 48 mW at 120 fps. The total integration capacitor is about 740 fF and the charge handling capacity is 8.8 Me-. The equivalent noise voltage on the integration capacitor is 116 μV and the peak signal-to-noise ratio is 84 dB at the full well..
Journal of Infrared and Millimeter Waves
- Publication Date: Aug. 25, 2022
- Vol. 41, Issue 4, 785 (2022)
A forward calculation method to quickly realize the achromatic metasurface for arbitrary polarization control
Fei-Long YU, Jin CHEN, Zeng-Yue ZHAO, Guan-Hai LI, Xiao-Shuang CHEN, and Wei LU
In recent years, many advances have been made in polarization control and dispersion control of artificial microstructure. However, it is still a challenge to realize achromatic control of arbitrary polarization because the traditional way to calculate the manipulation of metasurface on elliptic polarization have to soIn recent years, many advances have been made in polarization control and dispersion control of artificial microstructure. However, it is still a challenge to realize achromatic control of arbitrary polarization because the traditional way to calculate the manipulation of metasurface on elliptic polarization have to solve the equation for each piece of data. A direct calculation method based on coordinate transformation is proposed to quickly calculate the manipulation of metasurface elements on arbitrary polarization states. An achromatic focusing metasurface lens based on all-Si elliptic cylinder structure is designed to manipulate elliptical polarization states in the mid-infrared band. The result shows that this method and design can effectively control the elliptic polarization state under the condition of greatly simplifying the calculation process. Compared with the previously reported design based on circular polarization or non-polarization dependence, the application scope of the dispersion control of the metasurface is further expanded..
Journal of Infrared and Millimeter Waves
- Publication Date: Aug. 25, 2022
- Vol. 41, Issue 4, 792 (2022)
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