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    Journals >Journal of Semiconductors >Volume 41 >Issue 10 >Page 102401 > Article
    • Journal of Semiconductors
    • Vol. 41, Issue 10, 102401 (2020)
    Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters
    Elyes Garoudja1, Walid Filali1, Slimane Oussalah2, Noureddine Sengouga3, and Mohamed Henini4
    Author Affiliations
  • 1Plateforme Technologique de Microfabrication, Centre de Développement des Technologies Avancées, cité 20 août 1956, Baba Hassen, Algiers, Algeria
  • 2Microelectronics and Nanotechnology Division, Centre de Développement des Technologies Avancées, cité 20 août 1956, Baba Hassen, Algiers, Algeria
  • 3Laboratory of Metallic and Semiconducting Materials, Université de Biskra, B.P 455, 07000 Biskra RP, Algeria
  • 4School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Center, University of Nottingham, Nottingham, NG7 2RD, UK
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    DOI: 10.1088/1674-4926/41/10/102401 Cite this Article
    Elyes Garoudja, Walid Filali, Slimane Oussalah, Noureddine Sengouga, Mohamed Henini. Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters[J]. Journal of Semiconductors, 2020, 41(10): 102401 Copy Citation Text show less
    (Color online) The Schottky diode parameters extraction strategy.
    Fig. 1. (Color online) The Schottky diode parameters extraction strategy.
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    (Color online) The DLTS characterization bench at Nottingham University.
    Fig. 2. (Color online) The DLTS characterization bench at Nottingham University.
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    (Color online) The I–V characteristics of n-type Al0.33Ga0.67As Schottky diode for different temperatures.
    Fig. 3. (Color online) The I–V characteristics of n-type Al0.33Ga0.67As Schottky diode for different temperatures.
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    (Color online) Experimental and simulated I–V characteristics from 0 to 0.7 V at 100 K.
    Fig. 4. (Color online) Experimental and simulated I–V characteristics from 0 to 0.7 V at 100 K.
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    (Color online) Experimental and simulated I–V characteristics from 0 to 0.7 V at 300 K.
    Fig. 5. (Color online) Experimental and simulated I–V characteristics from 0 to 0.7 V at 300 K.
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    (Color online) Convergence characteristics of DE, PSO and ABC algorithms for T = 100 K.
    Fig. 6. (Color online) Convergence characteristics of DE, PSO and ABC algorithms for T = 100 K.
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    (Color online) Variation of RMSE at each running cycle for DE, PSO and ABC algorithm for T = 100 K.
    Fig. 7. (Color online) Variation of RMSE at each running cycle for DE, PSO and ABC algorithm for T = 100 K.
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    DEPSOABC
    Population size: 40 CR: 0.2 MF: 0.5 Swarm size: 100 Inertia weight: 0.4–0.7 C1, C2: 1.2,1.6 Colony size: 160 Limit: 3 × 160 = 480 Cycle: 5000
    Table 1. The setting parameters of DE, PSO and ABC algorithms.
    View in the Article
    ParameterIs (A) nRs (Ω)
    Variation boundary[10–9, 10–6] [0, 20][0, 104]
    Table 2. The variation range of SBD parameters.
    View in the Article
    TemparatureParameterDEPSOABCCheung
    T = 100 K Is1.069 × 10–71.352 × 10–74.816 × 10–75.00 × 10–8
    n9.60210.07613.288.61
    Rs1.717 × 1031.633 × 1031.286 × 1032217.09
    фb0.1760.1740.1630.20
    RMSE1.816 × 10–72.715 × 10–72.131 × 10–61.064 × 10–5
    Mean1.816 × 10–71.086 × 10–72.693 × 10–6–
    STD8.050 × 10–221.487 × 10–74.180 × 10–7–
    T = 120 K Is1.105 × 10–71.083 × 10–71.784 × 10–75.00 × 10–8
    n7.9077.8758.6647.12
    Rs1.630 × 1031.637 × 1031.520 × 1032.114 × 103
    фb0.2140.2150.200.24
    RMSE1.679 × 10–71.690 × 10–71.498 × 10–61.305 × 10–5
    Mean1.679 × 10–76.763 × 10–82.635 × 10–6–
    STD2.813 × 10–229.261 × 10–84.234 × 10–7–
    T = 160 K Is1.437 × 10–71.402 × 10–79.953 × 10–76.00 × 10–8
    n5.9625.9379.9355.27
    Rs1.483 × 1031.482 × 1034.58 × 1021.875 × 103
    фb0.2900.2910.260.33
    RMSE4.011 × 10–74.116 × 10–72.601 × 10–61.394 × 10–5
    Mean4.011 × 10–71.646 × 10–72.831 × 10–6–
    STD1.123 × 10–212.254 × 10–74.306 × 10–7–
    Table 3. The obtained results for the temperature range (100–160 K).
    View in the Article
    TemparatureParameterDEPSOABCCheung
    T = 200 K Is2.347 × 10–72.304 × 10–75.560 × 10–77.00 × 10–8
    n5.0645.0516.2044.19
    Rs1.282 × 1031.280 × 1031.017 × 1031.758 × 103
    фb0.3620.3630.3470.42
    RMSE7.96 × 10–78.005 × 10–71.441 × 10–61.829 × 10–5
    Mean7.968 × 10–73.202 × 10–72.970 × 10–6–
    STD5.989 × 10–224.384 × 10–78.012 × 10–7–
    T = 220 K Is9.245 × 10–79.165 × 10–71 × 10–68.00 × 10–8
    n6.6236.6046.7993.79
    Rs4.871 × 1024.92 × 1024.405 × 1021.736 × 103
    фb0.3760.3760.3750.46
    RMSE2.119 × 10–62.149 × 10–62.211 × 10–62.315 × 10–5
    Mean2.119 × 10–68.596 × 10–73.134 × 10–6–
    STD9.470 × 10–221.177 × 10–62.519 × 10–7–
    T = 240 K Is1.212 × 10-71.364 × 10–78.229 × 10–71.00 × 10–7
    n3.3723.4866.0783.46
    Rs1.799 × 1031.622 × 103100.231.693 × 103
    фb0.4560.4540.4160.51
    RMSE1.768 × 10–85.763 × 10–84.810 × 10–64.147 × 10–5
    Mean1.768 × 10–82.307 × 10–86.223 × 10–6–
    STD1.544 × 10–223.159 × 10–86.973 × 10–7–
    T = 300 K Is2.063 × 10–74.208 × 10–78.450 × 10–81.00 × 10–7
    n2.7623.4682.8742.82
    Rs1.560 × 1036.496 × 10217.6761.480 × 103
    фb0.5680.5490.5910.63
    RMSE2.539 × 10–83.959 × 10–79.856 × 10–61.971 × 10–4
    Mean2.539 × 10–81.583 × 10–71.329 × 10–5–
    STD3.766 × 10–222.168 × 10–71.170 × 10–5–
    Table 4. The obtained results for the temperature range (200–300 K).
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    Elyes Garoudja, Walid Filali, Slimane Oussalah, Noureddine Sengouga, Mohamed Henini. Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters[J]. Journal of Semiconductors, 2020, 41(10): 102401
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