Elyes Garoudja, Walid Filali, Slimane Oussalah, Noureddine Sengouga, Mohamed Henini. Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters[J]. Journal of Semiconductors, 2020, 41(10): 102401

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- Journal of Semiconductors
- Vol. 41, Issue 10, 102401 (2020)

Fig. 1. (Color online) The Schottky diode parameters extraction strategy.

Fig. 2. (Color online) The DLTS characterization bench at Nottingham University.

Fig. 3. (Color online) The I–V characteristics of n-type Al0.33Ga0.67As Schottky diode for different temperatures.

Fig. 4. (Color online) Experimental and simulated I–V characteristics from 0 to 0.7 V at 100 K.

Fig. 5. (Color online) Experimental and simulated I–V characteristics from 0 to 0.7 V at 300 K.

Fig. 6. (Color online) Convergence characteristics of DE, PSO and ABC algorithms for T = 100 K.

Fig. 7. (Color online) Variation of RMSE at each running cycle for DE, PSO and ABC algorithm for T = 100 K.
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Table 1. The setting parameters of DE, PSO and ABC algorithms.
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Table 2. The variation range of SBD parameters.
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Table 3. The obtained results for the temperature range (100–160 K).
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Table 4. The obtained results for the temperature range (200–300 K).

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