• Photonics Research
  • Vol. 8, Issue 9, 1409 (2020)
Inki Kim1、†, Juyoung Yun2、†, Trevon Badloe1, Hyuk Park2, Taewon Seo2, Younghwan Yang1, Juhoon Kim1, Yoonyoung Chung2、5, and Junsuk Rho1、3、4、*
Author Affiliations
  • 1Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea
  • 2Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea
  • 3Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea
  • 4National Institute of Nanomaterials Technology (NINT), Pohang 37673, South Korea
  • 5e-mail: ychung@postech.ac.kr
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    DOI: 10.1364/PRJ.395749 Cite this Article Set citation alerts
    Inki Kim, Juyoung Yun, Trevon Badloe, Hyuk Park, Taewon Seo, Younghwan Yang, Juhoon Kim, Yoonyoung Chung, Junsuk Rho. Structural color switching with a doped indium-gallium-zinc-oxide semiconductor[J]. Photonics Research, 2020, 8(9): 1409 Copy Citation Text show less

    Abstract

    Structural coloration techniques have improved display science due to their high durability in terms of resistance to bleaching and abrasion, and low energy consumption. Here, we propose and demonstrate an all-solid-state, large-area, lithography-free color filter that can switch structural color based on a doped semiconductor. Particularly, an indium-gallium-zinc-oxide (IGZO) thin film is used as a passive index-changing layer. The refractive index of the IGZO layer is tuned by controlling the charge carrier concentration; a hydrogen plasma treatment is used to control the conductivity of the IGZO layer. In this paper, we verify the color modulation using finite difference time domain simulations and experiments. The IGZO-based color filter technology proposed in this study will pave the way for charge-controlled tunable color filters displaying a wide gamut of colors on demand.
    H++O2=OH+e.(1)

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    ϵIGZO=ϵTL+ϵD=ϵ1+iϵ2,(2)

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    ϵD,1(E)=ADE2+ΓD2,(3)

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    ϵD,2(E)=ADΓDE3+ΓD2E,(4)

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    AD=ϵEp2,Ep=ωp=(2e2Nm*ϵϵ0)1/2,(5)

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    n=ϵ12+ϵ22+ϵ12,(6)

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    k=ϵ12+ϵ22ϵ12,(7)

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    Inki Kim, Juyoung Yun, Trevon Badloe, Hyuk Park, Taewon Seo, Younghwan Yang, Juhoon Kim, Yoonyoung Chung, Junsuk Rho. Structural color switching with a doped indium-gallium-zinc-oxide semiconductor[J]. Photonics Research, 2020, 8(9): 1409
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