Structural color switching with a doped indium-gallium-zinc-oxide semiconductor

Inki Kim; Juyoung Yun; Trevon Badloe; Hyuk Park; Taewon Seo; Younghwan Yang; Juhoon Kim; Yoonyoung Chung; Junsuk Rho

doi:10.1364/PRJ.395749

Journals >Photonics Research >Volume 8 >Issue 9 >Page 1409 > Article

Photonics Research
Vol. 8, Issue 9, 1409 (2020)

Structural color switching with a doped indium-gallium-zinc-oxide semiconductor

Inki Kim^1、†, Juyoung Yun^2、†, Trevon Badloe¹, Hyuk Park², Taewon Seo², Younghwan Yang¹, Juhoon Kim¹, Yoonyoung Chung^2、5, and Junsuk Rho^{1、3、4、*}

Author Affiliations

¹Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea

²Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea

³Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, South Korea

⁴National Institute of Nanomaterials Technology (NINT), Pohang 37673, South Korea

⁵e-mail: ychung@postech.ac.kr

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DOI: 10.1364/PRJ.395749 Cite this Article Set citation alerts

Inki Kim, Juyoung Yun, Trevon Badloe, Hyuk Park, Taewon Seo, Younghwan Yang, Juhoon Kim, Yoonyoung Chung, Junsuk Rho. Structural color switching with a doped indium-gallium-zinc-oxide semiconductor[J]. Photonics Research, 2020, 8(9): 1409 Copy Citation Text

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