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Journals >Journal of Semiconductors >Volume 43 >Issue 9 >Page 092802 > Article

Journal of Semiconductors
Vol. 43, Issue 9, 092802 (2022)

Electrical and optical properties of hydrogen plasma treatedβ-Ga₂O₃ thin films

Qian Jiang^1、2, Junhua Meng³, Yiming Shi^1、3, Zhigang Yin^1、4, Jingren Chen^1、4, Jing Zhang^2、*, Jinliang Wu¹, and Xingwang Zhang^1、4、**

Author Affiliations

¹Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²School of Information Science and Technology, North China University of Technology, Beijing 100144, China

³Faculty of Science, Beijing University of Technology, Beijing 100124, China

⁴Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1088/1674-4926/43/9/092802 Cite this Article

Qian Jiang, Junhua Meng, Yiming Shi, Zhigang Yin, Jingren Chen, Jing Zhang, Jinliang Wu, Xingwang Zhang. Electrical and optical properties of hydrogen plasma treatedβ-Ga₂O₃ thin films[J]. Journal of Semiconductors, 2022, 43(9): 092802 Copy Citation Text

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References

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Qian Jiang, Junhua Meng, Yiming Shi, Zhigang Yin, Jingren Chen, Jing Zhang, Jinliang Wu, Xingwang Zhang. Electrical and optical properties of hydrogen plasma treatedβ-Ga₂O₃ thin films[J]. Journal of Semiconductors, 2022, 43(9): 092802

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