• Acta Optica Sinica
  • Vol. 40, Issue 19, 1931001 (2020)
Shengquan He1, Haipeng Ke2、**, Lian Yan3, Xinglian Li1, Shaoying Ke1、*, and Dongke Li3
Author Affiliations
  • 1College of Physics and Information Engineering, Minnan Normal University, Zhangzhou, Fujian 363000, China
  • 2Zhangzhou First Vocational Secondary School, Zhangzhou, Fujian 363000, China
  • 3Huaiyin Normal University, Huaian, Jiangsu 223300, China
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    DOI: 10.3788/AOS202040.1931001 Cite this Article Set citation alerts
    Shengquan He, Haipeng Ke, Lian Yan, Xinglian Li, Shaoying Ke, Dongke Li. Effect of Interface State at Semiconductor-Insulator Contact Interface in Ge/Si Heterogeneous Bonding on Photoelectric Transport Characteristics of Heterojunction[J]. Acta Optica Sinica, 2020, 40(19): 1931001 Copy Citation Text show less
    References

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    Shengquan He, Haipeng Ke, Lian Yan, Xinglian Li, Shaoying Ke, Dongke Li. Effect of Interface State at Semiconductor-Insulator Contact Interface in Ge/Si Heterogeneous Bonding on Photoelectric Transport Characteristics of Heterojunction[J]. Acta Optica Sinica, 2020, 40(19): 1931001
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