Effect of Interface State at Semiconductor-Insulator Contact Interface in Ge/Si Heterogeneous Bonding on Photoelectric Transport Characteristics of Heterojunction

Shengquan He; Haipeng Ke; Lian Yan; Xinglian Li; Shaoying Ke; Dongke Li

doi:10.3788/AOS202040.1931001

Journals >Acta Optica Sinica >Volume 40 >Issue 19 >Page 1931001 > Article

Acta Optica Sinica
Vol. 40, Issue 19, 1931001 (2020)

Effect of Interface State at Semiconductor-Insulator Contact Interface in Ge/Si Heterogeneous Bonding on Photoelectric Transport Characteristics of Heterojunction

Shengquan He¹, Haipeng Ke^2、**, Lian Yan³, Xinglian Li¹, Shaoying Ke^1、*, and Dongke Li³

Author Affiliations

¹College of Physics and Information Engineering, Minnan Normal University, Zhangzhou, Fujian 363000, China

²Zhangzhou First Vocational Secondary School, Zhangzhou, Fujian 363000, China

³Huaiyin Normal University, Huaian, Jiangsu 223300, China

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DOI: 10.3788/AOS202040.1931001 Cite this Article Set citation alerts

Shengquan He, Haipeng Ke, Lian Yan, Xinglian Li, Shaoying Ke, Dongke Li. Effect of Interface State at Semiconductor-Insulator Contact Interface in Ge/Si Heterogeneous Bonding on Photoelectric Transport Characteristics of Heterojunction[J]. Acta Optica Sinica, 2020, 40(19): 1931001 Copy Citation Text

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