Shengquan He, Haipeng Ke, Lian Yan, Xinglian Li, Shaoying Ke, Dongke Li. Effect of Interface State at Semiconductor-Insulator Contact Interface in Ge/Si Heterogeneous Bonding on Photoelectric Transport Characteristics of Heterojunction[J]. Acta Optica Sinica, 2020, 40(19): 1931001
- Acta Optica Sinica
- Vol. 40, Issue 19, 1931001 (2020)
Fig. 1. Schematic of Ge/Si bonded heterojunction
Fig. 2. Influence of ISD on dark current of Ge/Si heterojunction when T=300 K
Fig. 3. Influence of ISD on total carrier recombination rate at different interfaces when T=300 K and bias voltage is -5 V. (a) Ge/GeO2 interface; (b) GeO2/Si interface
Fig. 4. Influence of ISD on hole and electron concentrations in Ge and Si layers when T=300 K and bias voltage is -5 V. (a) Hole concentration; (b) electron concentration
Fig. 5. Influence of ISD on electric filed and charge density when T=300 K and bias voltage is -5 V. (a) Electric fields in Ge and Si layers; (b) electric field in GeO2 layer; (c) charge density at Ge/Si interface
Fig. 6. Influence of ISD on electron and hole speeds in Ge layer when T=300 K and bias voltage is -5 V. (a) Electron speed; (b) hole speed
Fig. 7. Influence of ISD on total current and spectral response of Ge/Si heterojunction. (a) Total current; (b) spectral response
Fig. 8. Influence of ISD on frequency response and 3 dB bandwidth of Ge/Si heterojunction when T=300 K and bias voltage is -5 V. (a) Frequency response ; (b) 3 dB bandwidth
Fig. 9. Influence of bias voltage on Ge/Si heterojunction when T=300 K and ISD is 1×1010 cm-2. (a)Frequency response; (b) 3 dB bandwidth; (c) electric field
Fig. 10. Influence of bias voltage on carrier speed when T=300 K and ISD is 1×1010 cm-2. (a) Electron speed in Ge layer; (b) electron speed in Si layer; (c) hole speed in Ge layer; (d) hole speed in Si layer
Fig. 11. Influence of ISD on electron tunneling rate at Ge/Si bonded interface when T=300 K and bias voltage is -5 V
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