[1]
[2] Y Kim, S Lee, T Jung et al. Challenges in high-aspect ratio contact (HARC) etching for DRAM capacitor formation. Proc SPIE, 9428, 942806(2015).
[3] J M Lee, P H Choi, S K Kim et al. New method for reduction of the capacitor leakage failure rate without changing the capacitor structure or materials in DRAM mass production. IEEE Trans Electron Devices, 65, 4839(2018).
[4] D E Kotecki. A review of high dielectric materials for DRAM capacitors. Integr Ferroelectr, 16, 1(1997).
[5]
[6] I Chun, A Efremov, G Y Yeom et al. A comparative study of CF4/O2/Ar and C4F8/O2/Ar plasmas for dry etching applications. Thin Solid Films, 579, 136(2015).
[7] B E E Kastenmeier, P J Matsuo, J J Beulens et al. Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures. J Vac Sci Technol A, 14, 2802(1996).
[8] T E F M Standaert, C Hedlund, E A Joseph et al. Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide. J Vac Sci Technol A, 22, 53(2004).
[9] C J Mogab, A C Adams, D L Flamm. Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmas. J Appl Phys, 49, 3796(1978).