N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs

A. Pandey; Y. Malhotra; P. Wang; K. Sun; X. Liu; Z. Mi

doi:10.1364/PRJ.450465

Journals >Photonics Research >Volume 10 >Issue 4 >Page 1107 > Article

Photonics Research
Vol. 10, Issue 4, 1107 (2022)

N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs | On the Cover

A. Pandey¹, Y. Malhotra¹, P. Wang¹, K. Sun², X. Liu¹, and Z. Mi^1、*

Author Affiliations

¹Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA

²Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA

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DOI: 10.1364/PRJ.450465 Cite this Article Set citation alerts

A. Pandey, Y. Malhotra, P. Wang, K. Sun, X. Liu, Z. Mi. N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs[J]. Photonics Research, 2022, 10(4): 1107 Copy Citation Text

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The article is cited by 26 article(s) from Web of Science.

A. Pandey, Y. Malhotra, P. Wang, K. Sun, X. Liu, Z. Mi. N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs[J]. Photonics Research, 2022, 10(4): 1107

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