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Journals >Journal of Semiconductors >Volume 43 >Issue 10 >Page 104102 > Article

Journal of Semiconductors
Vol. 43, Issue 10, 104102 (2022)

A deep trench super-junction LDMOS with double charge compensation layer

Lijuan Wu^*, Shaolian Su^*, Xing Chen^*, Jinsheng Zeng^*, and Haifeng Wu^*

Author Affiliations

Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, School of Physics & Electronic Science, Changsha University of Science & Technology, Changsha 410114, China

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DOI: 10.1088/1674-4926/43/10/104102 Cite this Article

Lijuan Wu, Shaolian Su, Xing Chen, Jinsheng Zeng, Haifeng Wu. A deep trench super-junction LDMOS with double charge compensation layer[J]. Journal of Semiconductors, 2022, 43(10): 104102 Copy Citation Text

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References

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[4] R K Williams, M N Darwish, R A Blanchard et al. The trench power MOSFET: Part I—History, technology, and prospects. IEEE Trans Electron Devices, 64, 674(2017).

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[9] J J Cheng, P Li, W Z Chen et al. Simulation study of a super-junction deep-trench LDMOS with a trapezoidal trench. IEEE J Electron Devices Soc, 6, 1091(2018).

[10] K Zhou, X R Luo, Z J Li et al. Analytical model and new structure of the variable-k dielectric trench LDMOS with improved breakdown voltage and specific ON-resistance. IEEE Trans Electron Devices, 62, 3334(2015).

[11] D Yang, S D Hu, J M Lei et al. An ultra-low specific on-resistance double-gate trench SOI LDMOS with P/N Pillars. Superlattices Microstruct, 112, 269(2017).

[12] J J Cheng, W Z Chen, P Li. Improvement of deep-trench LDMOS with variation vertical doping for charge-balance super-junction. IEEE Trans Electron Devices, 65, 1404(2018).

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[14] B X Duan, S Yuan, Z Cao et al. New superjunction LDMOS with the complete charge compensation by the electric field modulation. IEEE Electron Device Lett, 35, 1115(2014).

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[16] W T Zhang, R Wang, S K Cheng et al. Optimization and experiments of lateral semi-superjunction device based on normalized current-carrying capability. IEEE Electron Device Lett, 40, 1969(2019).

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[18] P Nautiyal, A Agrawal, S Kumari et al. Electrical characteristic investigation of variation vertical doping superjunction UMOS. 2019 IEEE 16th India Council International Conference, 1(2019).

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[20] L J Wu, Q L Ding, J Q Chen. Improved deep trench super-junction LDMOS breakdown voltage by shielded silicon-insulator-silicon capacitor. Silicon, 13, 3441(2021).

[21] W Z Chen, L J He, Z S Han et al. The simulation study of the SOI trench LDMOS with lateral super junction. IEEE J Electron Devices Soc, 6, 708(2018).

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Lijuan Wu, Shaolian Su, Xing Chen, Jinsheng Zeng, Haifeng Wu. A deep trench super-junction LDMOS with double charge compensation layer[J]. Journal of Semiconductors, 2022, 43(10): 104102

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