Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height

Jae Hyeok Lee; Abu Bashar Mohammad Hamidul Islam; Tae Kyoung Kim; Yu-Jung Cha; Joon Seop Kwak

doi:10.1364/PRJ.385249

Journals >Photonics Research >Volume 8 >Issue 6 >Page 1049 > Article

Photonics Research
Vol. 8, Issue 6, 1049 (2020)

Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height

Jae Hyeok Lee^1、†, Abu Bashar Mohammad Hamidul Islam^1、†, Tae Kyoung Kim, Yu-Jung Cha, and Joon Seop Kwak^*

Author Affiliations

Department of Printed Electronics Engineering, Sunchon National University Jeonnam 540-742, South Korea

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DOI: 10.1364/PRJ.385249 Cite this Article Set citation alerts

Jae Hyeok Lee, Abu Bashar Mohammad Hamidul Islam, Tae Kyoung Kim, Yu-Jung Cha, Joon Seop Kwak. Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height[J]. Photonics Research, 2020, 8(6): 1049 Copy Citation Text

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