Electronic Property of PdSe2 Thin Films Fabricated by Post-selenization of Pd Films

Hui WANG; Shujuan ZHANG; Tingwei CHEN; Chuanlin ZHANG; Haosu LUO; Renkui ZHENG

doi:10.15541/jim20200540

Journals >Journal of Inorganic Materials >Volume 36 >Issue 7 >Page 779 > Article

Journal of Inorganic Materials
Vol. 36, Issue 7, 779 (2021)

Electronic Property of PdSe₂ Thin Films Fabricated by Post-selenization of Pd Films

Hui WANG^1、2, Shujuan ZHANG^1、3, Tingwei CHEN¹, Chuanlin ZHANG¹, Haosu LUO², and Renkui ZHENG^1、*

Author Affiliations

¹1. Jiangxi Engineering Laboratory for Advanced Functional Thin Films, School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China

²2. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China

³3. School of Materials, Mechanic, and Electrical Engineering, Jiangxi Science and Technology Normal University, Nanchang 330038, China

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DOI: 10.15541/jim20200540 Cite this Article

Hui WANG, Shujuan ZHANG, Tingwei CHEN, Chuanlin ZHANG, Haosu LUO, Renkui ZHENG. Electronic Property of PdSe₂ Thin Films Fabricated by Post-selenization of Pd Films[J]. Journal of Inorganic Materials, 2021, 36(7): 779 Copy Citation Text

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Side and top view of the crystal structure of PdSe2 thin films (a), schematic illustration for the growth of PdSe2 films on SiO2/Si substrates by post-selenization of a Pd layer in an evacuated quartz ampule (b), and structure diagram of the PdSe2/SiO2/Si structure (c)

1. Side and top view of the crystal structure of PdSe₂ thin films (a), schematic illustration for the growth of PdSe₂ films on SiO₂/Si substrates by post-selenization of a Pd layer in an evacuated quartz ampule (b), and structure diagram of the PdSe₂/SiO₂/Si structure (c)

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Photograph of an as-synthesized 5 mm×5 mm PdSe2 thin film (a), and top-view micrographs of the films selenized at 200 (b), 250 (c), 300 (d), 450 (e), and 600 ℃ (f), respectively

2. Photograph of an as-synthesized 5 mm×5 mm PdSe₂ thin film (a), and top-view micrographs of the films selenized at 200 (b), 250 (c), 300 (d), 450 (e), and 600 ℃ (f), respectively

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3. Raman spectra (a), FWHM of the A_g³ peaks (b) and Se/Pd atomic ratios (c) of the PdSe₂thin films selenized at different temperatures, cross-sectional HRTEM images for a film selenized at 300 ℃(d-e)

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4. Hall resistivity (a), carrier concentration (b), carrier mobility (c), and MR (d) of PdSe₂ thin films fabricated at different selenization temperaturesInset in (b) is conductivities of different PdSe₂ thin films. Dashed lines in (b, c) represent the carrier density and mobility of the Pd layer

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