Researching | 1.54 μm photoluminescence enhancenment of Er3+-doped ZnO films containing nc-Ge: joint effect from Er3+ local environment changing and energy transfer of nc-Ge

Journals >Photonics Research >Volume 5 >Issue 6 >Page 567 > Article

Photonics Research
Vol. 5, Issue 6, 567 (2017)

1.54 μm photoluminescence enhancenment of Er3+-doped ZnO films containing nc-Ge: joint effect from Er3+ local environment changing and energy transfer of nc-Ge

Ranran Fan, Fei Lu^*, and Kaikai Li

Author Affiliations

School of Information Science and Engineering, Shandong University, Jinan 250100, China

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DOI: 10.1364/PRJ.5.000567 Cite this Article Set citation alerts

Ranran Fan, Fei Lu, Kaikai Li. 1.54 μm photoluminescence enhancenment of Er3+-doped ZnO films containing nc-Ge: joint effect from Er3+ local environment changing and energy transfer of nc-Ge[J]. Photonics Research, 2017, 5(6): 567 Copy Citation Text

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References

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[13] Y. Maeda, N. Tsukamoto, Y. Yazawa, Y. Kanemitsu, Y. Masumoto. Visible photoluminescence of Ge microcrystals embedded in SiO₂ glassy matrices. Appl. Phys. Lett., 59, 3168-3170(1991).

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Ranran Fan, Fei Lu, Kaikai Li. 1.54 μm photoluminescence enhancenment of Er3+-doped ZnO films containing nc-Ge: joint effect from Er3+ local environment changing and energy transfer of nc-Ge[J]. Photonics Research, 2017, 5(6): 567

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