Researching | 1.54 μm photoluminescence enhancenment of Er3+-doped ZnO films containing nc-Ge: joint effect from Er3+ local environment changing and energy transfer of nc-Ge

Journals >Photonics Research >Volume 5 >Issue 6 >Page 567 > Article

Photonics Research
Vol. 5, Issue 6, 567 (2017)

1.54 μm photoluminescence enhancenment of Er3+-doped ZnO films containing nc-Ge: joint effect from Er3+ local environment changing and energy transfer of nc-Ge

Ranran Fan, Fei Lu^*, and Kaikai Li

Author Affiliations

School of Information Science and Engineering, Shandong University, Jinan 250100, China

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DOI: 10.1364/PRJ.5.000567 Cite this Article Set citation alerts

Ranran Fan, Fei Lu, Kaikai Li, "1.54 μm photoluminescence enhancenment of Er3+-doped ZnO films containing nc-Ge: joint effect from Er3+ local environment changing and energy transfer of nc-Ge," Photonics Res. 5, 567 (2017) Copy Citation Text

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References

[1] Y. Yang, Y. Li, L. Xiang, X. Ma, D. Yang. Low-voltage driven ∼1.54 μm electroluminescence from erbium-doped ZnO/p⁺-Si heterostructured devices: energy transfer from ZnO host to erbium ions. Appl. Phys. Lett., 102, 181111(2013).

[2] R. Morea, A. Miguel, T. T. Fernandez, B. Maté, F. J. Ferrer, C. Maffiotte, J. Fernandez, R. Balda, J. Gonzalo. Er³⁺-doped fluorotellurite thin film glasses with improved photoluminescence emissions at 1.53 μm. J. Lumin., 170, 778-784(2016).

[3] Y. Chen, Y. Lin, Y. Zou, Z. Luo, Y. Huang. Passively Q-switched 1.5–1.6 μm Er:Yb:LuAl₃(BO₃)₄ laser with Co²⁺:Mg_0.4Al_2.4O₄ saturable absorber. Opt. Express, 20, 9940-9947(2012).

[4] A. K. Pradhan, L. Douglas, H. Mustafa, R. Mundle, D. Hunter, C. E. Bonner. Pulsed-laser deposited Er:ZnO films for 1.54 μm emission. Appl. Phys. Lett., 90, 072108(2007).

[5] L. Honglin, L. Yingbo, L. Jinzhu, Y. Ke. Experimental and first-principles studies of structural and optical properties of rare earth (RE = La, Er, Nd) doped ZnO. J. Alloys Comp., 617, 102-107(2014).

[6] H. Krzyzanowska, Y. Fu, K. S. Ni, P. M. Fauchet. Efficient energy transfer between Si nanostructures and Er located at a controlled distance. ACS Photon., 3, 564-570(2016).

[7] N. Fukata, H. Morihiro, R. Shirakawa, K. Murakami, M. Mitome, Y. Bando. Formation of Si nanocrystallites observed by in situ transmission electron microscopy and their effect on the enhancement of Er photoluminescence in Er-doped SiO₂. J. Appl. Phys., 102, 114309(2007).

[8] I. Izeddin, D. Timmerman, T. Gregorkiewicz, A. S. Moskalenko, A. A. Prokofiev, I. N. Yassievich, M. Fujii. Energy transfer in Er-doped SiO₂ sensitized with Si nanocrystals. Phys. Rev. B, 78, 035327(2008).

[9] L. Dal Negro, R. Li, J. Warga, S. N. Basu. Sensitized erbium emission from silicon-rich nitride/silicon superlattice structures. Appl. Phys. Lett., 92, 181105(2008).

[10] Y.-W. Lu, C. Huang, J.-G. Cheng, A. N. Larsen. High Er³⁺ luminescent efficiency in Er-doped SiOx films containing amorphous Si nanodots. J. Alloys Comp., 676, 428-431(2016).

[11] Z. Wang, S. Wang, Y. Yin, T. Liu, D. Lin, D. H. Li, X. Yang, Z. Jiang, Z. Zhong. Promising features of low-temperature grown Ge nanostructures on Si (001) substrates. Nanotechnology, 28, 115701(2017).

[12] A. B. Djurisic, W. C. H. Choy, V. A. L. Roy, Y. H. Leung, C. Y. Kwong, K. W. Cheah, T. K. Gundu Rao, W. K. Chan, H. F. Lui, C. Surya. Photoluminescence and electron paramagnetic resonance of ZnO tetrapod structures. Adv. Funct. Mater., 14, 856-864(2004).

[13] Y. Maeda, N. Tsukamoto, Y. Yazawa, Y. Kanemitsu, Y. Masumoto. Visible photoluminescence of Ge microcrystals embedded in SiO₂ glassy matrices. Appl. Phys. Lett., 59, 3168-3170(1991).

[14] Y. Maeda. Visible photoluminescence from nanocrystallite Ge embedded in a glassy SiO₂ matrix: evidence in support of the quantum-confinement mechanism. Phys. Rev. B, 51, 1658-1670(1995).

[15] L. Brus. Zero-dimensional ‘excitons’ in semiconductor clusters. IEEE J. Quantum Electron., 22, 1909-1914(1986).

[16] F. Xiao, R. Chen, Y. Q. Shen, Z. L. Dong, H. H. Wang, Q. Y. Zhang, H. D. Sun. Efficient energy transfer and enhanced infrared emission in Er-doped ZnO–SiO₂ composites. J. Phys. Chem. C, 116, 13458-13462(2012).

[17] S. Komuro, T. Katsumata, T. Morikawa, X. Zhao, H. Isshiki, Y. Aoyagi. 1.54 μm emission dynamics of erbium-doped zinc-oxide thin films. Appl. Phys. Lett., 76, 3935-3937(2000).

[18] Z. Zhou, T. Komori, T. Ayukawa, H. Yukawa, M. Morinaga, A. Koizumi, Y. Takeda. Li- and Er-codoped ZnO with enhanced 1.54 μm photoemission. Appl. Phys. Lett., 87, 091109(2005).

[19] R. Zamiri, A. Rebelo, H. A. Ahangar, M. S. Belsley, J. M. F. Ferreir. Enhancement of near infrared emission in La co-doped ZnO/Er nanoplates. Ceram. Int., 40, 12947-12951(2014).

[20] T. Takagahara, K. Takeda. Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials. Phys. Rev. B, 46, 15578-15581(1992).

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Ranran Fan, Fei Lu, Kaikai Li, "1.54 μm photoluminescence enhancenment of Er3+-doped ZnO films containing nc-Ge: joint effect from Er3+ local environment changing and energy transfer of nc-Ge," Photonics Res. 5, 567 (2017)

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